• 자동차안전학회지
• /
• 제14권2호
• /
• pp.75-82
• /
• 2022

Automated vehicles (AVs) are coming to our roadways. In practice, there are still several challenges that can impede the AV sensors are polluted on various road conditions. In this paper, we propose a strategy for V2E performance assurance technology using Kano model. We are developing the vehicle sensor cleaning system about the three types of commonly used sensors: camera, radar, and LiDAR. Surveys were carried out in 30 AV's experts on quality characteristics about V2E performance assurance technology. As a result, the Kano model developed to verify a major requirement of autonomous vehicle's sensor cleaning system. It is expected that the Kano model will be actively used to verify the importance of V2E development strategy.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 춘계학술대회 논문집
• /
• pp.47-52
• /
• 2004

$HgGa_2S_4$ single crystals were grown by the chemical transport reaction method. The $HgGa_2S_4$ single crystal crystallized into a defect chalcopyrite structure $(I\bar{4})$. The lattice constants of the single crystal were found to be a=5.635 ${\AA}$ and c=10.473 ${\AA}$. The direct and indirect optical energy gaps were found to be 2.84 eV and 2.78 eV, respectively. Photoluminescence peaks of $HgGa_2S_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

• 한국결정성장학회지
• /
• 제8권2호
• /
• pp.211-220
• /
• 1998

수평 전기로에서 $AgGaS_2$ 다결정을 합성하여 HWE 방법으로 $AgGaS_2$ 단결정 박막을 성장하였다. $AgGaS_2$ 단결정 박막을 성잘할 때 증발원과 기판의 온도를 각각 $590^{\circ}C$, $440^{\circ}C$로 성장하였을 때 이중결정 X-선 요동곡선(double crystal X-ray diffraction rocking curve, DCRC)의 반폭치(FWHM)값이 124 arcsec로 가장 작아 최적 성장조건이었다. 상온에서 $AgGaS_2$ 단결정 박막의 광흡수 특성으로부터 에너지 띠간격이 2.61cV였다. Band edge에 해당하는 광전도도 peak의 온도 의존성은 Varshni 관계식으로 설명되었으며, Vaeshni 관계식의 상수값은 Eg(0) = 2.7284eV, $\alpha$= 8.695$\times$10-4 eV/K, $\beta$= 332K 로 주어졌다. 광발광 봉우리는 20K에서 414.3nm(2.9926eV)와 414.1nm(2.7249eV)는 free exciton(Ex)의 upper polariton과 lower polariton인 {{{{{E}`_{x} ^{u} }}}}와 {{{{{E}`_{x} ^{L} }}}}, 423.6nm(2.9269eV)는 bound exciton emission에 의한 I로 관측되었다. 또한 455nm(2.7249eV)의 peak는 donor-acceptor pair(DAP)에 기인하는 광발광 봉우리로 관측되었다.

• Journal of applied mathematics & informatics
• /
• 제27권5_6호
• /
• pp.1157-1163
• /
• 2009

Let G be a graph with vertex set V(G) and let f be a nonnegative integer-valued function defined on V(G). A spanning subgraph F of G is called a fractional f-factor if $d^h_G$(x)=f(x) for all x $\in$ for all x $\in$ V (G), where $d^h_G$ (x) = ${\Sigma}_{e{\in}E_x}$ h(e) is the fractional degree of x $\in$ V(F) with $E_x$ = {e : e = xy $\in$ E|G|}. In this paper it is proved that if ${\delta}(G){\geq}{\frac{b^2(k-1)}{a}},\;n>\frac{(a+b)(k(a+b)-2)}{a}$ and $|N_G(x_1){\cup}N_G(x_2){\cup}{\cdots}{\cup}N_G(x_k)|{\geq}\frac{bn}{a+b}$ for any independent subset ${x_1,x_2,...,x_k}$ of V(G), then G has a fractional f-factor. Where k $\geq$ 2 be a positive integer not larger than the independence number of G, a and b are integers such that 1 $\leq$ a $\leq$ f(x) $\leq$ b for every x $\in$ V(G). Furthermore, we show that the result is best possible in some sense.

• 대한수학회보
• /
• 제49권3호
• /
• pp.465-479
• /
• 2012

For $0<p{\leq}{\infty}$ and a convex body $K$ in $\mathbb{R}^n$, Lutwak, Yang and Zhang defined the concept of dual $L_p$-centroid body ${\Gamma}_{-p}K$ and $L_p$-John ellipsoid $E_pK$. In this paper, we prove the following two results: (i) For any origin-symmetric convex body $K$, there exist an ellipsoid $E$ and a parallelotope $P$ such that for $1{\leq}p{\leq}2$ and $0<q{\leq}{\infty}$, $E_qE{\supseteq}{\Gamma}_{-p}K{\supseteq}(nc_{n-2,p})^{-\frac{1}{p}}E_qP$ and $V(E)=V(K)=V(P)$; For $2{\leq}p{\leq}{\infty}$ and $0<q{\leq}{\infty}$, $2^{-1}{\omega_n}^{\frac{1}{n}}E_qE{\subseteq}{\Gamma}_{-p}K{\subseteq}{2\omega_n}^{-\frac{1}{n}}(nc_{n-2,p})^{-\frac{1}{p}}E_qP$ and $V(E)=V(K)=V(P)$. (ii) For any convex body $K$ whose John point is at the origin, there exists a simplex $T$ such that for $1{\leq}p{\leq}{\infty}$ and $0<q{\leq}{\infty}$, ${\alpha}n(nc_{n-2,p})^{-\frac{1}{p}}E_qT{\supseteq}{\Gamma}_{-p}K{\supseteq}(nc_{n-2,p})^{-\frac{1}{p}}E_qT$ and $V(K)=V(T)$.

• KSBB Journal
• /
• 제28권1호
• /
• pp.54-59
• /
• 2013

Three isolates, E. faecium P1, P2 and P3, from intestinal drugs of three phamaceutical companies, four clinical vancomycin resistant isolates, E. faecium V1, V2, V3 and E. faecalis V4, and three isolates, E. faecalis DW01, DW07 and DW14, from infant feces were tested for the presence of virulence genes, ace, agg, esp, efaA, gelE, sprE, vanA and vanB as well as fsrABC, regulatory genes of gelE and sprE, cylMBA, cytolysin activation genes and cpd, cob and ccf, pheromone genes by PCR and for their phenotype activities such as protease, biofilm formation, cell clumping and hemolysis. The genes encoding cell surface adherence proteins, ace, agg, esp and efaA, were predominantly amplified from the vancomycin resistant strain V4 and the fecal isolates DW01, DW07 and DW14. Both protease and biofilm formation activity were detected only from E. faecalis V4 from which the PCR products of gelE and spreE as well as fsrABC were amplified. The pheromone genes were amplified from the V4, DW01, DW07 and DW14 strains and these strains showed clumping activity. Biofilm formation was observed from the strains DW01, DW07 and DW14, all of which produced PCR products of pheromone, and V4 as well. Whole cytolysin regulator genes were amplified from DW01, DW07 and DW14 and ${\beta}$-hemolysis activity was detected from these strains. Any virulence genes or activities except the pheomone gene ccf were not detected from the pharmaceutical isolates, E. faecium P1, P2 and P3.

• BMB Reports
• /
• 제29권3호
• /
• pp.210-214
• /
• 1996

The pH dependence of the kinetic parameters of mutant O-acetylserine sulfhydrylase (OASS) from Salmonella typhimurium LT-2 has been determined in order to obtain information on the chemical mechanism. The initial velocity pattern obtained by varying the concentrations of OAS at several fixed concentrations of TNB, shows an intersection on the left of the ordinate at pH 7.0, indicating that the kinetic mechanism is a sequential mechanism in which substrate inhibition by OAS is observed while the wild type enzyme showed a ping pong mechanism. The values of $V/E_t$, $V/K_{OAS}E_{t}$ and $V/K_{TNB}E_{t}$ decreased by about 68%, 14% and 16% as compared with the wild type enzyme. The $V/K_{OAS}E_{t}$ is a pK of 6.5 on the acid side of the pH profile, and the $V/K_{TNB}$ is pH independent. As compared with the wild type enzyme, the pKs in the V/K profiles are shifted, reflecting that binding of the cofactor in free E:OAS is less asymmetric.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.91-91
• /
• 2011

박막태양전지의 높은 효율개선을 위해 TCO층과 p-layer 사이에 buffer layer를 넣어 Voc와 FF를 개선하는 연구가 진행되고 있다. 이에 buffer layer의 활성화 정도를 높이기 위해 p-layer을 최적화 시키고자한다. 이 실험에서 a-Si:B에 N2O를 도핑시켜 Bandgap Energy 2.0 eV, Activation Energy 0.4 eV인 a-SiOx:B 막을 제작하여 buffer layer로 사용하였고 이 buffer layer에 의한 cell의 효율 향상을 최적화 하기위해 ASA simulation을 이용해 p-layer의 Bandgap Energy와 Activation Energy를 가변 하여 보았다. 실험결과 p-layer의 Bandgap Energy 1.95 eV에서 buffer layer와 p-layer사이에서의 barrier가 최소가 됨을 확인 할 수 있었고 Actication Energy 0.5 eV에서 가장 높은 Voc를 가짐을 알 수 있었다. 본 연구를 통해 p-layer의 Bandgap Energy 1.95 eV, Activation Energy 0.5 eV에서 buffer layer를 활성화시키기 위한 p-layer의 최적화 조건을 구현해 볼 수 있었다.

• 한국전기전자재료학회논문지
• /
• 제20권3호
• /
• pp.207-212
• /
• 2007

The concentration profiles of deep energy levels($E_c$ -0.23e V, $E_v$+0.36e V and $E_c$ -0.23e V) in platinum-diffused silicon have generally a sharp gradient in the vicinity of the surface of the silicon wafer. In this work two efficient methods are proposed to obtain the uniform concentration profiles throughout the silicon wafer. One is that the platinum diffusion is carried out at $1000^{\circ}C$ for 1h in oxygen atmosphere. In this case the values of obtained uniform concentration, $1{\times}10^{15}cm^{-3}$ for the $E_c$ -0.23e V level, and 1{\times}10^{14}cm^{-3}$ for the $E_c$ -0.52e V level, are very restricted, respectively. The other is two-step annealing process. The platinum diffusion is carried out at $850{\sim}1100^{\circ}C$ in a nitrogen ambient for 1h and then the annealing is performed at $1000^{\circ}C$ in oxygen ambient after removing platinum-source from the platinum diffused samples. The advantage of this method is that the uniform concentration of these levels required power devices can be controlled by setting the desired temperatures when the platinum diffusion is carried out in nitrogen ambient.

• 한국정보통신학회논문지
• /
• 제14권11호
• /
• pp.2541-2547
• /
• 2010

본 논문에서는 대기 상태에서 저전력 eFuse OTP 메모리 IP틀 구현하기 위해 속도가 문제가 되지 않는 반복되는 블록 회로에서 1.2V 로직 트랜지스터 대신 누설 (off-leakage) 전류가작은 3.3V의 MV (Medium Voltage) 트랜지스터로 대체하는 설계기술을 제안하였다. 그리고 읽기 모드에서 RWL (Read Word-Line)과 BL의 기생하는 커패시턴스를 줄여 동작전류 소모를 줄이는 듀얼 포트 (Dual-Port) eFuse 셀을 사용하였다. 프로그램 전압에 대한 eFuse에 인가되는 프로그램 파워를 모의실험하기 위한 등가회로를 제안하였다. 하이닉스 90나노 CMOS 이미지 센서 공정을 이용하여 설계된 512비트 eFuse OTP 메모리 IP의 레이아웃 크기는 $342{\mu}m{\times}236{\mu}m$이며, 5V의 프로그램 전압에서 42개의 샘플을 측정한 결과 프로그램 수율은 97.6%로 양호한 특성을 얻었다. 그리고 최소 동작 전원 전압은 0.9V로 양호하게 측정되었다.