• Proceedings of the KIEE Conference
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• 1994.07a
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• pp.43-45
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• 1994

This paper proposes the new method to calculate the static thrust and normal force of a hybrid type double-sided linear pulse motor by the coenergy which considered the magnetic nonlinealities. In the process of the computation, the nonlinear characteristics of the magnetic material were interpolated by the cubic spline method. And, to investigate the characteristics of the hybrid type DLPM, the static thrust and the normal force is shown as a function of displacement, input current and air airgap length. Also the simulation values are compared with the experimental ones obtained from a hybrid type DLPM.

• Ocean Science Journal
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• v.42 no.2
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• pp.81-88
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• 2007

The paper reviews data available on euglenophycean algae of the genus Eutreptiella from the Russian waters of East/Japan Sea. Five species (such as E. braarudii, E. eupharyngea, E. gymnastica, E. cf. marina, and E. pascheri) were identified in our study. E. cf. marina and E. pascheri were found for the first time in the fare astern seas of Russia (including East/Japan Sea, Bering and Okhotsk seas). Morphological descriptions of species are based on light and electron microscopical studies and supplied with information on ecology and distribution. Original micrographs of these species obtained by light and electron microscopy are presented. It was established that E. eupharyngea, E. gymnastica, and E. pascheri cause water "blooms" in spring and summer in eutrophic coastal areas of Peter the Great Bay (East/Japan Sea), where their cell concentrations at these periods exceed $1\times10^6\;cells\;l^{-1}$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.1
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• pp.1-9
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• 2005

A stoichiometric mixture of evaporating materials for AgGaS₂ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, AgGaS₂ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were 590℃ and 440℃, respectively. The temperature dependence of the energy band gap of the AgGaS₂ obtained from the absorption spectra was well described by the Varshni's relation, E/sub g/(T) = 2.7284 eV - (8.695×10/sup -4/ eV/K)T²/(T + 332 K). After the as-grown AgGaS₂ single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of AgGaS₂ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of V/sub Ag/, V/sub s/, Ag/sub int/, and S/sub int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted AgGaS₂ single crystal thin films to an optical n-type. Also, we confirmed that Ga in AgGaS₂/GaAs crystal thin films did not form the native defects because Ga in AgGaS₂ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.5
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• pp.189-197
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• 2006

A stoichiometric mixture of evaporating materials for $AgGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C\;and\;420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501eV-(8.79x10^{-4}eV/K)T^2(T+250K)$. After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence (PL) at 10K. The native defects of $V_{Ag},\;V_{Se},\;Ag_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Society for Nondestructive Testing
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• v.25 no.2
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• pp.117-126
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• 2005

A stoichiometric mixture of evaporating materials for $AgGaS_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaS_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $590^{\circ}C\;and\;440^{\circ}C$, respectively The temperature dependence of the energy band gap of the $AgGaS_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7284 eV-(8.695{\times}10^{-4}eV/K)T^2/T(T+332K)$. After the as-grown $AgGaS_2$, single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of $AgGaS_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{Ag},\;V_s,\;Ag_{int},\;and\;S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaS_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $AgGaS_2$ crystal thin films did not form the native defects because Ga in $AgGaS_2$ single crystal thin films existed in the form of stable bonds.

• The Journal of Korean Academy of Prosthodontics
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• v.30 no.2
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• pp.135-154
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• 1992

This study was performed to analyze bond strength, the alterations of the interfaces between metal films which are populary used and considered to contribute to the chemical reaction with porcelain, according to constant ion- beam- mixing, and the relation between interfacial chemical reactions and bond strength in metal/porcelain specimens. For this study, three seperate metals : selected-gold, indium and tin were chosen ; each to be bonded to a seperate body porcelain. Bonding occurs when the metal is deposited to the body porcelain using a vacuum evaporator. The vacuum evaporator used $10^{-5}\sim10^{-6}$ Torr vacuum states for the evaporation of various metals (Au, Sn, In). Ion-beam-mixing of the porcelain/metal interfaces caused reactions when the Ar+ was implanted into thin films using a 80 KeV accelerator. These ion-beam-mixed specimens were then compared with an unmixed control group. An analysis of bond strength and ionic changes between the the metal and porcelain was performed by electron spectroscopy of chemical analysis (ESCA) and scratch test. The finding led to the following conclusions : 1. Light microscopic views of the scratch test : The ion-beam-mixed Au/porcelain specimen showed narrower scratched streams than the unmixed specimen. However, the Sn/porcelain, In/porcelain specimens showed no differences in the two conditions. 2. Acoustic emissions in scratch tests : The ion-mixed Au/porcelain, In/porcelain specimens showed signals closer to the metal/porcelain interfaces than unmixed specimens. Conversely, the ion-mixed Sn/porcelain specimen showed more critical signals in superficial portions than unmixed specimens. 3. After ion- beam-mixing, the Au/porcelain specimen showed apparently increased bond strength, and the In/porcelain specimen showed very slightly increased bond strength. However, the Sn/porcelain specimen showed no differences between ion mixed specimen and the unmixed one. 4. ESCA analysis : The ion-beam-mixed Au/porcelain specimen showed a higher peak separated value (4.3eV) than that of the unmixed specimen(3.65eV), the ion-beam-mixed In/porcelain specimen showed a higher peak separated value (9.43eV) than that of the unmixed specimen(7.6eV) and the ion-beam-mixed Sn/porcelain specimen showed a higher peak separated value (8.79eV) than that of the unmixed specimen(8.5eV). 5. Interfacial changes were observed in the ion-mixed Au/porcelain, In/porcelain and Sn/porcelain specimens. Especially, significant interfacial changes were measured in the ion- mixed Sn/porcelain specimen. Tin dioxide(SnO2) and a combination of pure tin and tin dioxide (Sn+SnO2) were produced. 6. In the Au/porcelain specimen, the interfacial chemical reaction showed increased bond strength between gold and porcelain substrate. But, in the In/porcelain, Sn/porcelain specimens, interfacial chemical reactions did not affected the bond strength between metal and porcelain substrate. Especially, bonding strength on the ion mixed Sn/porcelain specimen showed the least amount of difference.

• Journal of the Korean Mathematical Society
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• v.45 no.6
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• pp.1613-1622
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• 2008

Let G be a graph with vertex set V(G) and edge set E(G), and let g, f be two nonnegative integer-valued functions defined on V(G) such that $g(x)\;{\leq}\;f(x)$ for every vertex x of V(G). We use $d_G(x)$ to denote the degree of a vertex x of G. A (g, f)-factor of G is a spanning subgraph F of G such that $g(x)\;{\leq}\;d_F(x)\;{\leq}\;f(x)$ for every vertex x of V(F). In particular, G is called a (g, f)-graph if G itself is a (g, f)-factor. A (g, f)-factorization of G is a partition of E(G) into edge-disjoint (g, f)-factors. Let F = {$F_1$, $F_2$, ..., $F_m$} be a factorization of G and H be a subgraph of G with mr edges. If $F_i$, $1\;{\leq}\;i\;{\leq}\;m$, has exactly r edges in common with H, we say that F is r-orthogonal to H. If for any partition {$A_1$, $A_2$, ..., $A_m$} of E(H) with $|A_i|=r$ there is a (g, f)-factorization F = {$F_1$, $F_2$, ..., $F_m$} of G such that $A_i\;{\subseteq}E(F_i)$, $1\;{\leq}\;i\;{\leq}\;m$, then we say that G has (g, f)-factorizations randomly r-orthogonal to H. In this paper it is proved that every (0, mf - (m - 1)r)-graph has (0, f)-factorizations randomly r-orthogonal to any given subgraph with mr edges if $f(x)\;{\geq}\;3r\;-\;1$ for any $x\;{\in}\;V(G)$.

• Applied Biological Chemistry
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• v.41 no.1
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• pp.23-30
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• 1998

The cryIB, truncated cryIB$[cryIB({\alpha})]$, cryIA(b), and cytA genes, encoding 135-, 89-, 131-, and 27-kDa proteins, respectively, from Bacillus thuringiensis were cloned into a shuttle vector pBES and expressed in E. coli and Bacillus species. The morphology and solubility in alkaline buffer of the insecticidal crystal proteins were investigated. Transformation of intact cells of E. coli and Bacillus species was achieved by electroporation. High field strength of 11.0 kV/cm and resistance of 129 ohms were required for efficient transformation of E. coli strains and 4.5 kV/cm and 48 ohms for Bacillus species. Strains of recombinant E. coli and Bacillus species produced the insecticidal crystal proteins and accumulated as the same bipyramidal and irregular structures as those of CryIB and IA(b) and CytA of B. thuringiensls, respectively. The insecticidal crystal proteins accumulated in recombinant E. coli wire smaller in size than those in recombinant Bacillus species. The solubility in alkaline buffer of the insecticidal crystal proteins of recombinant E. coli increased gradually as the pH increased, whereas in the case of Bacillus species the solubility increased gradually as the pH increased up to 9 and then the solubility increased greatly up to two times higher than that of E. coli proteins.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.97.2-97.2
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• 2012

This study examined the utility of two zwitterions, nitrile-functionalized zwitterions and a zwitterion without a nitrile group (MF-ZI), were used as additives along with 1 M $LiPF_6$ in ethylene carbonate (EC):diethylene carbonate (DEC) (3:7 V/V) (E-0) to form an electrolyte solution for use in lithium ion batteries comprising graphite and $LiCoO_2$ electrodes. The presence of NF-ZI (E-NF-ZI) in the electrolyte produced an ion conductivity comparable to that of E-0 and higher than that of an electrolyte containing MF-ZI (E-MF-ZI). Linear sweep voltammetry data revealed that the intensity of the E-NF-ZI reduction peak was lower than that of E-0. Furthermore, the successful formation of an SEI layer in the E-NF-ZI over graphite was confirmed by cyclic voltammetry data. These results were attributed to the adsorption of NF-ZI on the electrode surface, as verified by differential capacity measurements.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.5
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• pp.1032-1037
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• 2003

Boron-doped CdS thin films were chemically deposited onto glass substrates. X-ray diffraction (XRD), photoluminescence (PL), and Raman techniques were used to evaluate the quality of B-doped CdS films. XRD results have confirmed that B-doped CdS films has a hexagonal structure with a preferential orientation of the (002) plane. The PL spectra for all samples consists of two prominent broad bands around 2.3 eV (green emission) and 1.6 eV (red emission) and the higher doping concentrations gradually decreased the green emission and red emission. Raman analysis has shown that undoped films have structure superior to those of B-doped CdS films. Boron doping into CdS films improved the optical transmittance and increased the optical band gap.