Journal of the Korean Society for Nondestructive Testing (비파괴검사학회지)

The Korean Society for Nondestructive Testing (한국비파괴검사학회)
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Study on Point Defect for $AgGaS_2$ Single Crystal Thin film Obtained by Photoluminescience Measurement Method

광발광 측정법에 의한 $AgGaS_2$ 단결정 박막의 점결함 연구

  • Published : 2005.04.30
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Abstract

A stoichiometric mixture of evaporating materials for $AgGaS_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaS_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $590^{\circ}C\;and\;440^{\circ}C$, respectively The temperature dependence of the energy band gap of the $AgGaS_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7284 eV-(8.695{\times}10^{-4}eV/K)T^2/T(T+332K)$. After the as-grown $AgGaS_2$, single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of $AgGaS_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{Ag},\;V_s,\;Ag_{int},\;and\;S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaS_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $AgGaS_2$ crystal thin films did not form the native defects because Ga in $AgGaS_2$ single crystal thin films existed in the form of stable bonds.

[ $AgGaS_2$ ] 단결정 박막을 수평 전기로에서 합성한 $AgGaS_2$ 다결정을 증발원으로하여, hot wall epitaxy(HWE) 방법으로 증발원과 기판 (반절연성 -GaAs (100))의 온도를 각각 $590^{\circ}C,\;440^{\circ}C$로 고정하여 성장하였다. 이때 단결정 박막의 결정성은 광발광 스펙트럼과 이중결정 X-선 요동곡선 (DCRC)으로 부터 구하였다. $AgGaS_2$의 광흡수 스펙트럼으로부터 구한 온도에 의존하는 에너지 밴드갭 $E_g(T)$는 Varshni. 공식에 fitting한 결과 $E_g(T)=2.7284 eV-(8.695{\times}10^{-4}eV/K)T^2/T(T+332K)$를 잘 만족하였다. 성장된 $AgGaS_2$, 단결정 박막을 Ag, Ga, S분위기에서 각각 열처리하여 10K에서 photoluminescience(PL) spectrum을 측정하여 점 결함의 기원을 알아보았다. PL 측정으로부터 얻어진 $V_{Ag},\;V_s,\;Ag_{int}$, 그리고 $S_{int}$는 주개와 받개로 분류되어졌다. $AgGaS_2$ 단결정 박막을 Ag분위기에서 열처리하면 n형으로 변환됨을 알 수 있었다. 또한, Ca 분위기에서 열처리하면 열처리 이전의 PL스펙트럼을 보이고 있어서, $AgGaS_2$ 단결정 박막에서 Ga은 안정된 결합의 형태로 있기 때문에 자연 결함의 형성에는 관련이 없음을 알았다.

Keywords

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