• Title/Summary/Keyword: E.A.V.

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Two-Disjoint Path Problem in LSI Layout CAD (LSI의 레이아웃 CAD에 있어서 2 -독립 경로 문제)

  • 정대화
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.19 no.6
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    • pp.62-66
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    • 1982
  • A method finding out routability for unrouted signal lines and rerouting those which are turned out to be able to route in layout design of LSI is described. In this paper the problems of finding two-disjoint Paths represented by an undirected graph G=(V,E), where V,E are sets of vertices and edges respectively, are studied. The existence of two-disjoint paths from s1, to t1, (called P1) and from S2 to T2 (called P2) indicated by the four vertices on the graph s1, t1, s2, t2 $\in$ V means that two distinct signal lines exist in layout design. It turns out that the proposed time complexity in the algorithm is O (IVI x IEI).

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Specific and Sensitive Detection of Venturia nashicola, the Scab Fungus of Asian Pears, by Nested PCR

  • Koh, Hyun Seok;Sohn, San Ho;Lee, Young Sun;Koh, Young Jin;Song, Jang Hoon;Jung, Jae Sung
    • The Plant Pathology Journal
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    • v.29 no.4
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    • pp.357-363
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    • 2013
  • The fungus Venturia nashicola is the causal agent of scab on Asian pears. For the rapid and reliable identification as well as sensitive detection of V. nashicola, a PCR-based technique was developed. DNA fingerprints of three closely related species, V. nashicola, V. pirina, and V. inaequalis, were obtained by random amplified polymorphic DNA (RAPD) analysis. Two RAPD markers specific to V. nashicola were identified by PCR, after which two pairs of sequence characterized amplified region (SCAR) primers were designed from the nucleotide sequences of the markers. The SCAR primer pairs, designated as D12F/D12R and E11F/E11R, amplified 535-bp and 525-bp DNA fragments, respectively, only from genomic DNA of V. nashicola. The specificity of the primer sets was tested on strains representing three species of Venturia and 20 fungal plant pathogens. The nested PCR primer pair specific to V. nashicola was developed based on the sequence of the species-specific 525-bp DNA fragment amplified by primer set E11F/E11R. The internal primer pair Na11F/Na11R amplified a 235-bp fragment from V. nashicola, but not from any other fungal species tested. The nested PCR assay was sensitive enough to detect the specific fragment in 50 fg of V. nashicola DNA.

Multiple Electron Beam Lithography for High Throughput (생산성 향상을 위한 멀티빔 리소그라피)

  • Choi, Sang-Kook;Yi, Cheon-Hee
    • Korean Journal of Optics and Photonics
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    • v.16 no.3
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    • pp.235-238
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    • 2005
  • A Multiple electron beam lithography system with arrayed microcolumns has been developed for high throughput applications. The small size of the microcolumn opens the possibility for arrayed operation on a scale commensurate. The arrayed microcolumns based on of Single Column Module (SCM) concept has been fabricated and successfully demonstrated. Low energy microcolumn lithography has been operated in the energy range from 250 eV to 300 eV for the generation of nano patterns. Probe beam current at the sample was measured about >1 nA at a total beam current of $0.5\;{\mu}A$ and a working distance of $\~1\;mm$. The magnitude of probe beam current is strong enough for the low energy lithography. The thin layers of PMMA resist have been employed. The results of nano-patterning by low energy microcolumn lithography will be discussed.

Properties of Photoluminescience for AgInS2/GaAs Epilayer Grown by Hot Wall Epitaxy

  • Lee, Sang-Youl;Hong, Kwang-Joon
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.2
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    • pp.50-54
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    • 2004
  • The AgInS$_2$epilayers with chalcopyrite structure grown by using a hot-wall epitaxy (HWE) method have been confirmed to be a high quality crystal. From the optical absorption measurement, the temperature dependence of the energy band gap on the AgInS$_2$/GaAs was derived as the Varshni's relation of E$\_$g/(T) = 2.1365 eV - (9.89${\times}$10$\^$-3/ eV/K) T$^2$/(2930+T eV). After the as-grown AgInS$_2$/GaAs was annealed in Ag-, S-. and In-atmosphere, the origin of point defects of the AgInS$_2$/GaAs has been investigated by using the photoluminescence (PL) at 10 K. The native defects of $V_{Ag}$, $V_s$, $Ag_{int}$, and $S_{int}$ obtained from PL measurement were classified to donors or accepters type. And, we concluded that the heat-treatment in the S- atmosphere converted the AgInS$_2$/GaAs to optical p-type. Also, we confirmed that the In in the AgInS$_2$/GaAs did not form the native defects because the In in AgInS$_2$did exist as the form of stable bonds.

Surface Display of Organophosphorus Hydrolase on E. coli Using N-Terminal Domain of Ice Nucleation Protein InaV

  • Khodi, Samaneh;Latifi, Ali Mohammad;Saadati, Mojtaba;Mirzaei, Morteza;Aghamollaei, Hossein
    • Journal of Microbiology and Biotechnology
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    • v.22 no.2
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    • pp.234-238
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    • 2012
  • Recombinant Escherichia coli displaying organophosphorus hydrolase (OPH) was used to overcome the diffusion barrier limitation of organophosphorus pesticides. A new anchor system derived from the N-terminal domain of ice-nucleation protein from Pseudomonas syringae InaV (InaV-N) was used to display OPH onto the surface. The designed sequence was cloned in the vector pET-28a(+) and then was expressed in E. coli. Tracing of the expression location of the recombinant protein using SDS-PAGE showed the presentation of OPH by InaV-N on the outer membrane, and the ability of recombinant E. coli to utilize diazinon as the sole source of energy, without growth inhibition, indicated its significant activity. The location of OPH was detected by comparing the activity of the outer membrane fraction with the inner membrane and cytoplasm fractions. Studies revealed that recombinant E. coli can degrade 50% of 2 mM chlorpyrifos in 2 min. It can be concluded that InaV-N can be used efficiently to display foreign functional protein, and these results highlight the high potential of an engineered bacterium to be used in bioremediation of pesticide-contaminated sources in the environment.

A study on photoreflectance in Fe-doped semi-insulating InP (Fe가 첨가된 반절연성 InP에서 Photoreflectance에 관한 연구)

  • 김인수;이정열;배인호
    • Journal of the Korean Vacuum Society
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    • v.6 no.3
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    • pp.249-254
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    • 1997
  • We investigated characteristics of Fe-doped semi-insulating InP by means of photoreflectance(PR) measurement. The band gap energy($E_0$) and broadening parameter($\Gamma$) from PR signals at 300K are 1.336 eV and 11.2 meV, respectively. As the temperature is decreased from 300 to 80 K, PR signals are varied from an overlapped shape of exciton and 2-dimensional band gap transitions(300 K) to that of exciton transition(80 K). We calculated Varshni coefficient($\alpha=0.94\pm$0.07 meV/K, $\beta=587\pm$35.2 K) and Bose-Einstein coefficient ($a_B=33.6{\pm}2.02meV$ , $\theta=165\pm$33K). After annealing of isothermal and isochronism crystallinity of InP is found to be excellent when annealed at $300^{\circ}C$ for 10~20 min, qualitatively.

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Calculation of Sputter Yield using Monte Carlo Techniques (몬테카를로 방식에 의한 스퍼터율 계산에 관한 연구)

  • 반용찬;이제희;원태영
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.12
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    • pp.59-67
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    • 1998
  • In this paper, a rigorous three-dimensional Monte Carlo approach to simulate the sputter yield as a function of the incident ion energy and the incident angle as well as the atomic ejection distribution of the target is presented. The sputter yield of the target atom (Cu, Al) has been calculated for the different species of the incident atoms with the incident energy range of 10 eV ~ 100 KeV, which coincides with the previously reported experimental results. According to the simulation results, the calculated sputter yield tends to increase with the amount of the energy of the incident atoms. Our simulation revealed that the maximum sputter yield can be obtained for the incident atom with 10 KeV for the heavy ion, while the maximum sputter yield for the light ion is for the incident atoms with an energy less than 1 KeV. The sputter yield increases with angle of incidence and seems to have the maximum value at 68$^{\circ}$. For angular distributions of the sputtered particle, the atoms in the direction normal to the surface increase with angle of incidence. Furthermore, we has conducted the parallel computation on CRAY T3E supercomputer and built a GUI(Graphic User Interface) system running the sputter simulator.

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Hypoglycemic, Hepatoprotective, and Nephroprotective Effects of - 'Saengjinyanghyul-tang($Sh\={e}ngj\={i}ny\v{a}ngxu\`{e}-t\={a}ng$)' - in Streptozotocin-Induced Diabetic SD Rats (생진양혈탕(生律養血湯)이 Streptozotocin으로 유발된 당뇨병 Rat 모델의 고혈당 및 간병증과 신병증에 미치는 영향)

  • Kwak Min-Ah;Kim Min-Su;Byun Joon-Seok
    • The Journal of Korean Medicine
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    • v.27 no.2 s.66
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    • pp.155-170
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    • 2006
  • Objectives : This study aimed to evaluate the hypoglycemic, hepatoprotective, and nephroprotective effects of 'Saengjinyanghyul-tang($Sh\={e}ngj\={i}ny\v{a}ngxu\`{e}-t\={a}ng$ : SJYHT)' in streptozotocin (STZ)-induced diabetic SD rat model. Methods : SJYHT extracts were once a day dosed for 28 days at a dosage 1000, 500, and 250mg/kg/5ml from 25 days after STZ-dosing, and the changes on blood glucose levels, liver and kidney weight, serum AST, ALT, BUN and creatinine levels were observed with histological changes on the liver and kidney. Results : Increased blood glucose levels, and diabetic hepatopathy & nephropathy including increased serum AST, ALT, BUN and creatinine levels, histological changes after STZ-dosing were dose-dependently reduced by SJYHT extract-dosing. Conclusions : 'SJYHT' water extracts have favorable hypoglycemic, hepatoprotective, and nephroprotective effects on the STZ-induced diabetic SD rats. Therefore, it is expected that 'SJYHT' has potential for use in the management of diabetes and diabetic complications.

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Human coronavirus infection in hospitalized children with community-acquired pneumonia (입원한 폐렴 환아에서 코로나 바이러스 감염)

  • Chung, Ju-Young;Han, Tae Hee;Kim, Sang Woo;Koo, Ja Wook;Hwang, Eung-Soo
    • Pediatric Infection and Vaccine
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    • v.14 no.1
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    • pp.69-74
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    • 2007
  • Purpose : Human coronanviruses (hCovs) including hCoV-229E and hCoV-OC43 have been known as etiologic agents of the common colds and were regarded as clinically insignificant agents. However, recent identification of hCoV-NL63 and hCoV-HKU1 in children with lower respiratory tract infections has evoked the clinical concerns about their prevalence and the clinical significance of these hCoVs in children. This study was performed to investigate the prevalence of hCoVs in children with community-acquired pneumonia. Methods : From March 2006 to January 2007, nasopharyngeal specimens collected from children hospitalized with pneumonia, were tested for the presence of common respiratory viruses (respiratory syncytial virus, influenza A, influenza B, parainfluenza viruses, and adenovirus) using multiplex reverse transcriptase polymerase chain reaction (RT-PCR). Human metapneumovirus (hMPV) infection was excluded by nested RT-PCR using primers for the F-gene. To detect the different strains of hCoVs, nested RT-PCR assays specific for hCoVNL63, hCoV-OC43, hCoV-229E, and hCoV-HKU1 were performed. Results : Out of the 217 nasopharyngeal aspirate from children aged under 15 years, respiratory syncytial virus (RSV) was detected in 32 patients, hMPV in 18, human parainfluenza virus in 10, influenza virus A in 2, and adenovirus in 6. HCoVs were detected by RT-PCR in 8 (3.7%) of the 217 patients, hCoV-229E in 1, hCoV-NL63 in 3, and hCoVOC43 in 4 patients. HCoV-HKU1 was not detected in this study population. Conclusion : Recently identified hCoV-NL63 and hCoV-HKU1 seemed to have a little clinical significance in Korean children with severe or hospitalized community-acquired pneumonia.

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Effect of Channel Length and Drain Bias on Threshold Voltage of Field Enhanced Solid Phase Crystallization Polycrystalline Thin Film Transistor on the Glass Substrate (자계 유도 고상결정화를 이용한 다결정 실리콘 박막 트랜지스터의 채널 길이와 드레인 전압에 따른 문턱 전압 변화)

  • Kang, Dong-Won;Lee, Won-Kyu;Han, Sang-Myeon;Park, Sang-Geun;Han, Min-Koo
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1263-1264
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    • 2007
  • 자계 유도 고상결정화(FESPC)를 이용하여 제작한 다결정실리콘(poly-Si) 박막 트랜지스터(TFT)는 비정질 실리콘 박막 트랜지스터(a-Si:H TFT)보다 뛰어난 전기적 특성과 우수한 안정성을 지닌다. $V_{DS}$ = -0.1 V에서 채널 폭과 길이가 각각 $5\;{\mu}m$, $7\;{\mu}m$인 P형 TFT의 이동도(${\mu}$)와 문턱 전압($V_{TH}$)은 각각 $31.98\;cm^2$/Vs, -6.14 V 이다. FESPC TFT는 일반 poly-Si TFT에 비해 채널 내 결정 경계 숫자가 많아서 상대적으로 열악한 특성을 가진다. 채널 길이 $5\;{\mu}m$인 TFT의 $V_{TH}$는 채널 길이 $18\;{\mu}m$ 소자의 $V_{TH}$보다 1.36V 작지만, 일반적으로 큰 값이다. 이 현상은 채널에 다수의 결정 경계가 존재하고, 수평 전계가 크기 때문이다. 수평 전계가 증가하면, 결정 경계의 전위 장벽 높이가 감소하게 되는데, 이는 DIGBL 효과이다. ${\mu}$의 증가에 따라서, 드레인 전류가 증가하고 $V_{TH}$은 감소한다. 활성화 에너지($E_a$)는 드레인 전압과 결정 경계의 수에 따라 변하는데, 드레인 전압이 크거나 결정 경계의 수가 감소하면 $E_a$는 감소한다. $E_a$가 감소하면 $V_{TH}$가 감소한다. 유리기판 위의 FESPC를 이용한 P형 poly-Si TFT의 $V_{TH}$는 채널의 길이와 $V_{DS}$에 영향을 받는다. 증가한 수평 전계가 결정 경계에서 에너지 장벽을 낮추는 효과를 일으키기 때문이다.

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