• 전자공학회논문지S
• /
• 제34S권9호
• /
• pp.50-59
• /
• 1997

This paper is on the generalized singular perturbation approximation (GSPA) preserving the discrete positive real property. We transform the discrete positive real(PR) system into a stochastically banlanced system and get the reduced order discrete system from the GSPA of the full order stochastically balanced system. eSPECIALLY, WHEN THE FREE PARAMETER OF THE gspa IS .+-.1, we show that the reduced order discrete system retains stability, minimality, and positive real and stochstically balancing properties. And we derived the .inf.-norm error bound with the reduced order discrete strictly positive real(SPR) system by the proposed method. Finally, we give an example to ascertain the properties of the proposed reduced order discrete system and to compare with the conventional methods.

• E2M - 전기 전자와 첨단 소재
• /
• 제7권1호
• /
• pp.49-56
• /
• 1994

Polycrystalline CdS thin films were deposited by using EBE method and its crystal structure, surface morphology, electrical and optical properties as a function of annealing temperature were investigated. It was found that optimum growth conditions were substrate temperature annealing temperature 300[.deg. C]. The films were hexagonal structure preferred(002) plane and maximum grain size was 421[.angs.]. As the results, resistivity and optical transmittance of CdS thin films were $8.3{\times}{10^3}$[.ohm.cm] and 89[%] respectively.

• Journal of Korean Vacuum Science & Technology
• /
• 제5권2호
• /
• pp.52-55
• /
• 2001

We report best dielectric function of ZnS by spectroscopic ellipsometry in the 3.7 - 6.0 eV photon energy range at room temperature. Using proper wet chemical etching procedure, natural overlayer was removed to obtain the pure dielectric function of ZnS, which had a higher <$\xi$$_2$> value at the El band gap peak than that previously reported. We also determined the dielectric property of the natural overlayer on ZnS by following the evolution of <$\xi$$_2$> with chemical etching. We found that the optical property of the overlayer was well described by amorphous semiconductor model.

• E2M - 전기 전자와 첨단 소재
• /
• 제8권2호
• /
• pp.184-189
• /
• 1995

The electrical property of ultra thin PVA films(several hundreds .angs.-several .mu.m in thickness) formed by sphere bulb blowing technique, has been studied. The electrical conductivity of relatively thick films(>several thousands .angs.) has been very high and enhanced by the exposure either to high humidity of air or $NH_3$, which can be explained in terms of the role of ionic transport. The use of PVA films as NH$_{3}$ sensor is also proposed. In ultra thin PVA films less than 1500.angs., two conducting states ; high conducting and low conducting states, are observed. The nonlinear current-voltage characteristics in the low conducting state and the switching between these two states are also confirmed. These properties are discussed in terms of electronic conduction processes. The breakdown strength of the ultra thin PVA film is found to be very high(-30MV/cm), supporting the electron avalanche process in a thick polymer films.

• 기술혁신학회지
• /
• 제5권1호
• /
• pp.26-43
• /
• 2002

Korean government has been putting efforts to promote development of technologies by government sponsored labs and to transfer, diffuse, and commercialize these technologies in private sector since mid 1980s. In spite of these efforts, utilization of government-sponsored technology remains in the very low level. According to the survey conducted by Korea Intellectual and Patent Office (1999), the ratio of unused industrial property rights including patents was above 70% of total industrial property rights. Survey on the information and telecommunication industry done by the Institute of Information Technology Assessment (IITA) in 1999 shows that the utilization ratio of government-sponsored technologies is about 55.8%. This is especially true where government is not the primary or end-user of technologies. The purposes of this paper are to (1) identify a process model of technology commercialization, (2) develop the related variables of each step in the six-step continuous process model of government-sponsored technology commercialization, (3) empirically investigate the data gathered through questionnaire survey, and (4) suggest policy alternatives for promoting technology commercialization in Information and Telecommunication industries.

• E2M - 전기 전자와 첨단 소재
• /
• 제7권3호
• /
• pp.220-224
• /
• 1994

In this study, we discussed the optical property to find the optimal condition of Te-based antireflection trilayer(ART) structure for a high density optical recording. It was found that the optical property was improved by suggesting the environmental parameters satisfied the optimum condition. As the results, the optimized(.lambda.=8.000${\AA}$.) thickness of the recording layer is 27${\AA}$, and the 1st and 2nd minimum ART conditions of dielectric layers are 1080${\AA}$, 3820${\AA}$, respectively. And the high SNR, the contrast ratio and the sensitivity are achieved by using the ART conditions.

• 미생물학회지
• /
• 제46권2호
• /
• pp.223-227
• /
• 2010

RNase E는 대장균 내에 있는 수많은 RNA의 분해와 가공에 관여하며, 또한 RNA 대사 작용에 관련된 거대한 단백질 복합체인 데그라도좀을 구성하는 중요한 효소로 알려져 있다. RraA와 RraB는 최근에 밝혀진 RNase E의 단백질 저해제이며, 진화적으로 잘 보존되어 있다. 이 연구에서는 RraA를 발현 시킬 때와는 달리 세포 내에서 RraB를 발현 시키면, RNase E의 과발현에 따른 세포의 성장 저해를 회복시키지 못하고 더 저해하는 것을 확인하였다. 이 현상이 RraA와 RraB가 세포내 RNase E의 기질들에 대해 특이적으로 영향을 미치기 때문인지를 알아보기 위해 세 개의 RNase E 기질을 분석하였다. 그 결과, ColE1-타입 플라스미드의 복제수를 조절하는 RNA I과 라이보좀 단백질 S15를 코딩하는 rpsO mRNA의 경우 RraA가 RraB 보다 효과적으로 RNase E의 활성을 저해하며, RNase P의 RNA 구성요소의 전구체인 pM1 RNA에 대한 RNase E의 효소 활성은 RraB가 저해하지 못하는 것을 관찰하였다. 이 결과는 RraB가 RraA보다는 높은 기질 특이적으로 RNase E의 효소활성을 저해하며, 이러한 이유로 RNase E의 과발현에 의한 세포의 성장 저해를 RraB의 과발현으로 극복할 수 없었다고 추론할 수 있다.

• The Journal of the Acoustical Society of Korea
• /
• 제17권3E호
• /
• pp.53-57
• /
• 1998

Spectral information at a speech coder should be quantized with sufficient accuracy to keep perceptually transparent output speech. Spectral information at a low bit rate speech coder is usually transformed into corresponding line spectrum pair parameters and is often quantized with a vector quantization algorithm. As the vector quantization algorithm generally has high complexity in the optimal code vector searching routine, the complexity reduction in that routine is investigated using the ordering property of the line spectrum pair. When the proposed complexity reduction algorithm is applied to the well-known split vector quantization algorithm, the 46% complexity reduction is achieved in the distortion measure compu-tation.

• 대한수학회보
• /
• 제47권3호
• /
• pp.483-490
• /
• 2010

Some results on inheritance of operator semi-selfdecomposability and its decreasing subclass property from subordinator to subordinated in subordination of a L$\acute{e}$evy process are given. A main result is an extension of results of [5] to semi-selfdecomposable subordinator. Its consequence is discussed.

• Journal of applied mathematics & informatics
• /
• 제34권3_4호
• /
• pp.221-225
• /
• 2016

For a connected graph G = (V, E), its inverse degree is defined as $\sum_{{\upsilon}{\in}{V}}^{}\frac{1}{d(\upsilon)}$. Using an upper bound for the inverse degree of a graph obtained by Cioabă in [4], we in this note present sufficient conditions for some Hamiltonian properties and k-connectivity of a graph.