• Journal of the Korean Institute of Telematics and Electronics S
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• v.34S no.9
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• pp.50-59
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• 1997

This paper is on the generalized singular perturbation approximation (GSPA) preserving the discrete positive real property. We transform the discrete positive real(PR) system into a stochastically banlanced system and get the reduced order discrete system from the GSPA of the full order stochastically balanced system. eSPECIALLY, WHEN THE FREE PARAMETER OF THE gspa IS .+-.1, we show that the reduced order discrete system retains stability, minimality, and positive real and stochstically balancing properties. And we derived the .inf.-norm error bound with the reduced order discrete strictly positive real(SPR) system by the proposed method. Finally, we give an example to ascertain the properties of the proposed reduced order discrete system and to compare with the conventional methods.

• Electrical & Electronic Materials
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• v.7 no.1
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• pp.49-56
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• 1994

Polycrystalline CdS thin films were deposited by using EBE method and its crystal structure, surface morphology, electrical and optical properties as a function of annealing temperature were investigated. It was found that optimum growth conditions were substrate temperature annealing temperature 300[.deg. C]. The films were hexagonal structure preferred(002) plane and maximum grain size was 421[.angs.]. As the results, resistivity and optical transmittance of CdS thin films were $8.3{\times}{10^3}$[.ohm.cm] and 89[%] respectively.

• Journal of Korean Vacuum Science & Technology
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• v.5 no.2
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• pp.52-55
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• 2001

We report best dielectric function of ZnS by spectroscopic ellipsometry in the 3.7 - 6.0 eV photon energy range at room temperature. Using proper wet chemical etching procedure, natural overlayer was removed to obtain the pure dielectric function of ZnS, which had a higher <$\xi$$_2$> value at the El band gap peak than that previously reported. We also determined the dielectric property of the natural overlayer on ZnS by following the evolution of <$\xi$$_2$> with chemical etching. We found that the optical property of the overlayer was well described by amorphous semiconductor model.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.184-189
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• 1995

The electrical property of ultra thin PVA films(several hundreds .angs.-several .mu.m in thickness) formed by sphere bulb blowing technique, has been studied. The electrical conductivity of relatively thick films(>several thousands .angs.) has been very high and enhanced by the exposure either to high humidity of air or $NH_3$, which can be explained in terms of the role of ionic transport. The use of PVA films as NH$_{3}$ sensor is also proposed. In ultra thin PVA films less than 1500.angs., two conducting states ; high conducting and low conducting states, are observed. The nonlinear current-voltage characteristics in the low conducting state and the switching between these two states are also confirmed. These properties are discussed in terms of electronic conduction processes. The breakdown strength of the ultra thin PVA film is found to be very high(-30MV/cm), supporting the electron avalanche process in a thick polymer films.

• Journal of Korea Technology Innovation Society
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• v.5 no.1
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• pp.26-43
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• 2002

Korean government has been putting efforts to promote development of technologies by government sponsored labs and to transfer, diffuse, and commercialize these technologies in private sector since mid 1980s. In spite of these efforts, utilization of government-sponsored technology remains in the very low level. According to the survey conducted by Korea Intellectual and Patent Office (1999), the ratio of unused industrial property rights including patents was above 70% of total industrial property rights. Survey on the information and telecommunication industry done by the Institute of Information Technology Assessment (IITA) in 1999 shows that the utilization ratio of government-sponsored technologies is about 55.8%. This is especially true where government is not the primary or end-user of technologies. The purposes of this paper are to (1) identify a process model of technology commercialization, (2) develop the related variables of each step in the six-step continuous process model of government-sponsored technology commercialization, (3) empirically investigate the data gathered through questionnaire survey, and (4) suggest policy alternatives for promoting technology commercialization in Information and Telecommunication industries.

• Electrical & Electronic Materials
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• v.7 no.3
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• pp.220-224
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• 1994

In this study, we discussed the optical property to find the optimal condition of Te-based antireflection trilayer(ART) structure for a high density optical recording. It was found that the optical property was improved by suggesting the environmental parameters satisfied the optimum condition. As the results, the optimized(.lambda.=8.000${\AA}$.) thickness of the recording layer is 27${\AA}$, and the 1st and 2nd minimum ART conditions of dielectric layers are 1080${\AA}$, 3820${\AA}$, respectively. And the high SNR, the contrast ratio and the sensitivity are achieved by using the ART conditions.

• Korean Journal of Microbiology
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• v.46 no.2
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• pp.223-227
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• 2010

RNase E plays a major role in the degradation and processing of a large number of RNA transcripts in Escherichia coli and forms the core component of the degradosome, a large protein complex involved in RNA metabolism. RraA and RraB are recently discovered protein inhibitors of RNase E and are evolutionarily conserved. In this study, we observed that, unlike RraA, overexpression of RraB did not rescue growth arrest of E. coli cells overexpressing RNase E. To examine whether this phenomenon stems from differential inhibitory effects of RraA and RraB on RNase E substrates, we analyzed three in vivo RNase E substrates. The results showed that RraA inhibited RNase E activity more efficiently than RraB on the degradation of RNA I, which controls the copy number of ColE1-type plasmid, and rpsO mRNA encoding ribosomal protein S15, while RraB was unable to inhibit the processing of pM1 RNA, a precursor of the RNA component of RNase P, by RNase E. Our results imply that RraB inhibits RNase E activity in a more substrate-dependent manner than RraA and this property of RraB may explain why overexpression of RraB could not rescue cells overexpressing RNase E from growth arrest.

• The Journal of the Acoustical Society of Korea
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• v.17 no.3E
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• pp.53-57
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• 1998

Spectral information at a speech coder should be quantized with sufficient accuracy to keep perceptually transparent output speech. Spectral information at a low bit rate speech coder is usually transformed into corresponding line spectrum pair parameters and is often quantized with a vector quantization algorithm. As the vector quantization algorithm generally has high complexity in the optimal code vector searching routine, the complexity reduction in that routine is investigated using the ordering property of the line spectrum pair. When the proposed complexity reduction algorithm is applied to the well-known split vector quantization algorithm, the 46% complexity reduction is achieved in the distortion measure compu-tation.

• Bulletin of the Korean Mathematical Society
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• v.47 no.3
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• pp.483-490
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• 2010

Some results on inheritance of operator semi-selfdecomposability and its decreasing subclass property from subordinator to subordinated in subordination of a L$\acute{e}$evy process are given. A main result is an extension of results of [5] to semi-selfdecomposable subordinator. Its consequence is discussed.

• Journal of applied mathematics & informatics
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• v.34 no.3_4
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• pp.221-225
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• 2016

For a connected graph G = (V, E), its inverse degree is defined as $\sum_{{\upsilon}{\in}{V}}^{}\frac{1}{d(\upsilon)}$. Using an upper bound for the inverse degree of a graph obtained by Cioabă in [4], we in this note present sufficient conditions for some Hamiltonian properties and k-connectivity of a graph.