• Title/Summary/Keyword: Dual-Band Mixer

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124-142 GHz Dual-Polarization Superconducting Mixer Receiver for Korean VLBI Network

  • Lee, Jung-Won;Wang, Ming-Jye;Kim, Soo-Yeon;Li, Chao-Te;Chen, Tse-Jun;Kang, Yong-Woo;Lu, Wei-Chun;Shi, Sheng-Cai;Han, Seog-Tae
    • The Bulletin of The Korean Astronomical Society
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    • v.37 no.1
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    • pp.66.1-66.1
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    • 2012
  • We have developed superconducting mixer receivers for 129 GHz VLBI observation in Korean VLBI Network(KVN). The developed mixer has a radial waveguide probe with simple transmission line LC transformer as a tuning circuit to its 5 series-connected junctions, which can have 125-165 GHz as operation RF frequency. For IF signal path a high impedance quarter-wavelength line connects the probe to one end of symmetric RF chokes. DSB receiver noise of the mixer was about 40 K over 4-6 GHz IF band whereas we achieved about uncorrected SSB noise temperature of 70 K and better than 10 dB IRR in 2SB configuration with 8-10 GHz IF band. Insert-type receiver cartridges using the mixers have been assembled for all three KVN stations. On-site performance summary in commissioning phase is presented.

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A Differential Voltage-controlled Oscillator as a Single-balanced Mixer

  • Oh, Nam-Jin
    • International journal of advanced smart convergence
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    • v.10 no.1
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    • pp.12-23
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    • 2021
  • This paper proposes a low power radio frequency receiver front-end where, in a single stage, single-balanced mixer and voltage-controlled oscillator are stacked on top of low noise amplifier and re-use the dc current to reduce the power consumption. In the proposed topology, the voltage-controlled oscillator itself plays the dual role of oscillator and mixer by exploiting a series inductor-capacitor network. Using a 65 nm complementary metal oxide semiconductor technology, the proposed radio frequency front-end is designed and simulated. Oscillating at around 2.4 GHz frequency band, the voltage-controlled oscillator of the proposed radio frequency front-end achieves the phase noise of -72 dBc/Hz, -93 dBc/Hz, and -113 dBc/Hz at 10KHz, 100KHz, and 1 MHz offset frequency, respectively. The simulated voltage conversion gain is about 25 dB. The double-side band noise figure is -14.2 dB, -8.8 dB, and -7.3 dB at 100 KHz, 1 MHz and 10 MHz offset. The radio frequency front-end consumes only 96 ㎼ dc power from a 1-V supply.

A Dual-Band Transmitter RF Front-End for IMT-Advanced system in 0.13-μm CMOS Technology (IMT-Advanced 표준을 지원하는 이중대역 0.13-μm CMOS 송신기 RF Front-End 설계)

  • Shin, Sang-Woon;Seo, Yong-Ho;Kim, Chang-Wan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.15 no.2
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    • pp.273-278
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    • 2011
  • This paper has proposed a dual-band transmitter RF Front-end for IMT-Advanced systems which has been implemented in a 0.13-${\mu}m$ CMOS technology. The proposed dual-band transmitter RF Front-End covers 2300~2700 MHz, 3300~3800 MHz frequency ranges which support 802.11, Mobile WiMAX, and IMT-Advanced system. The proposed dual-band transmitter RF Front-End consumes 45 mA from a 1.2 V supply voltage. The performances of the transmitter RF Front-End are verified through post-layout simulations. The simulation results show a +0 dBm output power at 2 GHz band, and +1.3 dBm output power at 3 GHz band.

Design of the RF Front-end for L1/L2 Dual-Band GPS Receiver (L1/L2 이중-밴드 GPS 수신기용 RF 전단부 설계)

  • Kim, Hyeon-Deok;Oh, Tae-Soo;Jeon, Jae-Wan;Kim, Seong-Kyun;Kim, Byung-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.10
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    • pp.1169-1176
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    • 2010
  • The RF front-end for L1/L2 dual-band Global Positioning System(GPS) receiver is presented in this paper. The RF front-end(down-converter) using low IF architecture consists of a wideband low noise amplifier(LNA), a current mode logic(CML) frequency divider and a I/Q down-conversion mixer with a poly-phase filter for image rejection. The current bleeding technique is used in the LNA and mixer to obtain the high gain and solve the head-room problem. The common drain feedback is adopted for low noise amplifier to achieve the wideband input matching without inductors. The fabricated RF front-end using $0.18{\mu}m$ CMOS process shows a gain of 38 dB for L1 and 41 dB for L2 band. The measured IIP3 is -29 dBm in L1 band and -33 dBm in L2 band, The input return loss is less than -10 dB from 50 MHz to 3 GHz. The measured noise figure(NF) is 3.81 dB for L1 band and 3.71 dB for L2 band. The image rejection ratio is 36.5 dB. The chip size of RF front end is $1.2{\times}1.35mm^2$.

Design of Double Bond Down Converting Mixer Using Embeded Balun Type (발룬 내장형 이중대역 하향 변환 믹서 설계 및 제작)

  • Lee, Byung-Sun;Roh, Hee-Jung;Seo, Choon-Weon
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.22 no.6
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    • pp.141-147
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    • 2008
  • This paper describes the design of frequency down converting Mixer in the receiver to use compound semiconductor and CMOS product process. The basic theory and structure of frequency down converting Mixer is surveyed, and we design mixer circuit with active balun which use the compound semiconductor and CMOS process. This mixer convert a single ended signal to differential signal at input port of RF and LO instead of matching circuit to get dual band balanced mixer structure and characteristic broadband. This designed mixer has a conversion gain $-1{\sim}-6[dB]$ at $2{\sim}6[GHz]$ bandwidths. However, the simulation of the designed mixer with active balun has the result of a 7[dB] conversion gain for -2[dBm] LO input power and -10[dBm] input P1[dB] at 5.8[GHz].

Broadband Mixer with built-in Active Balun for Dual-band WLAN Applications (이중대역 무선랜용 능동발룬 내장 광대역 믹서 설계)

  • Lee, Kang-Ho;Koo, Kyung-Heon
    • Proceedings of the IEEK Conference
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    • 2005.11a
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    • pp.261-264
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    • 2005
  • This paper presents the design of a down-conversion mixer with built-in active balun integrated in a $0.25\;{\mu}m$ pHEMT process. The active balun consists of series-connected common-gate FET and common-source FET. The designed balun achieved broadband characteristics by optimizing gate-width and bias condition for the reduction in parasitic effect. From DC to more than 6GHz, the active balun shows the phase error of less than 3 degree and the gain error of less than 0.4 dB. A single-balanced down-conversion mixer with built-in broadband active balun has been designed with optimum width, load resistor and bias for conversion gain and without any matching component for broadband operating. The designed mixer whose size of including on-chip bias circuit is $1\;mm{\times}1\;mm$ shows the conversion gain of better than 7 dB from 2 GHz to 6 GHz and $P_{1dB}$ of -10 dBm at 5.8 GHz

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A study of Concurrent Dual Band Mixer Design Using Dual-Gate FET Structure (Dual-Gate FET구조를 이용한 Concurrent 이중 대역 주파수 혼합기 설계 연구)

  • Jung, Hyo-Bin;Choi, Jin-Kyu;Kim, Hyeong-Seok
    • Proceedings of the KIEE Conference
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    • 2008.05a
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    • pp.153-156
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    • 2008
  • 본 논문은 Local oscillator의 2차 harmonic 신호를 이용하고 Dual gate FET 형태를 이용한 이중대역 주파수 혼합기 설계에 대한 연구 이다. 기존의 회로 구조는 두 대역을 처리하기 위해 각각 두 개의 국부 발진기와 혼합기를 사용함으로 인하여 구조의 복잡함과 큰 전력 손실이라는 단점을 가지고 있었다. 본 연구는 하나의 주파수 혼합기로 두 개의 대역에서 동시에 적용할 수 있는 Concurrent 이중 대역 설계 연구를 하였다. ISM(Industrial Science Medical) 대역 인 912MHz, 2.45GHz의 RF 입력과 455.5MHz, 1224.5MHz의 LO 입력 신호에서 동일한 IF인 1MHz로 하향변환 했을 때 모의실험 결과 변환이득은 각각 7dB, 12dB로 이고 RF-LO 격리도는 -29dB, -24.7dB가 나왔다. 또한 두 입력 단에서의 반사손실의 -15dB 이상을 얻었다. 또한 각각의 대역에서 잡음지수는 8.5dB, 6.26dB이다.

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A Study on the Mobile Communication System for the Ultra High Speed Communication Network (초고속 정보통신망을 위한 이동수신 시스템에 관한 연구)

  • Kim, Kab-Ki;Moon, Myung-Ho;Shin, Dong-Hun;Lee, Jong-Arc
    • Journal of IKEEE
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    • v.2 no.1 s.2
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    • pp.1-14
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    • 1998
  • In this paper, Antenna, LNA, Mixer, VCO, and Modulation/Demodulation in Baseband processor which are the RF main components in Wireless LAN system for ultra high-speed communications network are studied. Antenna bandwidth and selective fading due to multipath can be major obstacles in high speed digital communications. To solve this problem, wide band MSA which has loop-structure magnetic antenna characteristics is designed. Distributed mixer using dual-gate GaAs MESFET can achieve over 10dB LO/RF isolation without hybrid, and minimize circuit size. As linear mixing signal is produced, distortions can be decreased at baseband signals. Conversion gain is achieved by mixing and amplification simultaneously. Mixer is designed to have wide band characteristics using distributed amplifier. In VCO design, Oscillator design method by large signal analysis is used to produce stable signal. Modulation/Demodulation system in baseband processor, DS/SS technique which is robust against noise and interference is used to eliminate the effect of multipath propagation. DQPSK modulation technique with M-sequences for wideband PN spreading signals is adopted because of BER characteristic and high speed digital signal transmission.

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Development of W-band Transceiver Module using Manufactured MMIC (국내개발 MMIC칩을 적용한 W-Band 송수신모듈 개발)

  • Kim, Wan-Sik
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.17 no.2
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    • pp.233-237
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    • 2017
  • The dual-channel receiver MMIC which is composed of LNA, Mixer, LO-amp and temperature compensation circuit is designed on a single chip. For the performance comparison, a FMCW radar transceiver module using commercial MMICs is also implemented. As a result, Multi-channel Transceiver using manufactured MMIC shows an improved performance such as noise figure and gain flatness compare to purchased MMIC.