• 한국인쇄학회지
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• 제22권2호
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• pp.101-110
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• 2004

The local surface strength variation of coated papers were measured at various speeds on a number of coated paper samples to study the effects of speed and ink tack on coating pick. Coating pick phenomenon is observed in an ink transfer variation curve as a decrease in the slope of the curve. On the other hand, it causes an actual decrease in net ink transfer to paper with an increase in speed. The effect of speed on coating pick depends on ink tack, ink film thickness and surface properties of coating layer formation of paper. A novel device to measure the surface strength can rate the coating paper in a different order. Comparison are made between dry test of coating paper pick and wet coating pick test of printing in IGT printability tester. Coating formulation is the main key to prevent from coating pick. The binder level increases, the coating pick and the slop decrease. The piling on blanket in printing is a problem when the coating pick is occur on a local area rather than average surface strength of coated papers.

• 센서학회지
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• 제21권1호
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• pp.34-38
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• 2012

We have developed a cost effective test socket for ball grid array(BGA) integrated circuit(IC) packages using BeCu metal sheet as a test probe. The BeCu furnishes the best combination of electrical conductivity and corrosion resistance. The probe of the test socket was designed with a BeCu cantilever. The cantilever was designed with a length of 450 ${\mu}m$, a width of 200 ${\mu}m$, a thickness of 10 ${\mu}m$, and a pitch of 650 ${\mu}m$ for $11{\times}11$ BGA. The fabrication of the test socket used techniques such as through-silicon-via filling, bonding silicon wafer and BeCu metal sheet with dry film resist(DFR). The test socket is applicable for BGA IC chip.

• 센서학회지
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• 제30권1호
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• pp.10-14
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• 2021

Wet etching is more economical than dry etching and provides a uniform etching depth regardless of wafer sizes. Typically, potassium hydroxide (KOH) and tetra-methyl-ammonium hydroxide (TMAH) solutions are widely used for the wet etching of silicon. However, there is a limit to the wet etching process when a material deposited on an unetched surface reacts with an etching solution. To solve this problem, in this study, an apparatus was designed and manufactured to physically block the inflow of etchants on the surface using a rubber O-ring. The proposed apparatus includes a heater and a temperature controller to maintain a constant temperature during etching, and the hydrostatic pressure of the etchant is considered for the thin film structure. A corrugation membrane with a diameter of 800 ㎛, thickness of 600 nm, and corrugation depth of 3 ㎛ with two corrugations was successfully fabricated using the prepared device.

• 한국재료학회지
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• 제23권9호
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• pp.477-482
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• 2013

We investigated the detection properties of nitrogen monoxide (NO) gas using transparent p-type $CuAlO_2$ thin film gas sensors. The $CuAlO_2$ film was fabricated on an indium tin oxide (ITO)/glass substrate by pulsed laser deposition (PLD), and then the transparent p-type $CuAlO_2$ active layer was formed by annealing. Structural and optical characterizations revealed that the transparent p-type $CuAlO_2$ layer with a thickness of around 200 nm had a non-crystalline structure, showing a quite flat surface and a high transparency above 65 % in the range of visible light. From the NO gas sensing measurements, it was found that the transparent p-type $CuAlO_2$ thin film gas sensors exhibited the maximum sensitivity to NO gas in dry air at an operating temperature of $180^{\circ}C$. We also found that these $CuAlO_2$ thin film gas sensors showed reversible and reliable electrical resistance-response to NO gas in the operating temperature range. These results indicate that the transparent p-type semiconductor $CuAlO_2$ thin films are very promising for application as sensing materials for gas sensors, in particular, various types of transparent p-n junction gas sensors. Also, these transparent p-type semiconductor $CuAlO_2$ thin films could be combined with an n-type oxide semiconductor to fabricate p-n heterojunction oxide semiconductor gas sensors.

• 한국재료학회지
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• 제20권5호
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• pp.235-240
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• 2010

We investigated the carbon monoxide (CO) gas-sensing properties of nanostructured Al-doped zinc oxide thin films deposited on self-assembled Au nanodots (ZnO/Au thin films). The Al-doped ZnO thin film was deposited onto the structure by rf sputtering, resulting in a gas-sensing element comprising a ZnO-based active layer with an embedded Pt/Ti electrode covered by the self-assembled Au nanodots. Prior to the growth of the active ZnO layer, the Au nanodots were formed via annealing a thin Au layer with a thickness of 2 nm at a moderate temperature of $500^{\circ}C$. It was found that the ZnO/Au nanostructured thin film gas sensors showed a high maximum sensitivity to CO gas at $250^{\circ}C$ and a low CO detection limit of 5 ppm in dry air. Furthermore, the ZnO/Au thin film CO gas sensors exhibited fast response and recovery behaviors. The observed excellent CO gas-sensing properties of the nanostructured ZnO/Au thin films can be ascribed to the Au nanodots, acting as both a nucleation layer for the formation of the ZnO nanostructure and a catalyst in the CO surface reaction. These results suggest that the ZnO thin films deposited on self-assembled Au nanodots are promising for practical high-performance CO gas sensors.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.363-363
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• 2014

Ruthenium (Ru) has attractive material properties due to its promising characteristics such as a low resistivity ($7.1{\mu}{\Omega}{\cdot}cm$ in the bulk), a high work function of 4.7 eV, and feasibility for the dry etch process. These properties make Ru films appropriate for various applications in the state-of-art semiconductor device technologies. Thus, it has been widely investigated as an electrode for capacitor in the dynamic random access memory (DRAM), a metal gate for metal-oxide semiconductor field effect transistor (MOSFET), and a seed layer for Cu metallization. Due to the continuous shrinkage of microelectronic devices, better deposition processes for Ru thin films are critically required with excellent step coverages in high aspect ratio (AR) structures. In these respects, atomic layer deposition (ALD) is a viable solution for preparing Ru thin films because it enables atomic-scale control of the film thickness with excellent conformality. A recent investigation reported that the nucleation of ALD-Ru film was enhanced considerably by using a zero-valent metallorganic precursor, compared to the utilization of precursors with higher metal valences. In this study, we will present our research results on the synthesis and characterization of novel ruthenium complexes. The ruthenium compounds were easy synthesized by the reaction of ruthenium halide with appropriate organic ligands in protic solvent, and characterized by NMR, elemental analysis and thermogravimetric analysis. The molecular structures of the complexes were studied by single crystal diffraction. ALD of Ru film was demonstrated using the new Ru metallorganic precursor and O2 as the Ru source and reactant, respectively, at the deposition temperatures of $300-350^{\circ}C$. Self-limited reaction behavior was observed as increasing Ru precursor and O2 pulse time, suggesting that newly developed Ru precursor is applicable for ALD process. Detailed discussions on the chemical and structural properties of Ru thin films as well as its growth behavior using new Ru precursor will be also presented.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.104-104
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• 2009

Critical dimensions has rapidly shrunk to increase the degree of integration and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate insulator layer and the low conductivity characteristic of poly-silicon. To cover these faults, the study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$ and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-silicon gate is not compatible with high-k materials for gate-insulator. To integrate high-k gate dielectric materials in nano-scale devices, metal gate electrodes are expected to be used in the future. Currently, metal gate electrode materials like TiN, TaN, and WN are being widely studied for next-generation nano-scale devices. The TaN gate electrode for metal/high-k gate stack is compatible with high-k materials. According to this trend, the study about dry etching technology of the TaN film is needed. In this study, we investigated the etch mechanism of the TaN thin film in an inductively coupled plasma (ICP) system with $O_2/BCl_3/Ar$ gas chemistry. The etch rates and selectivities of TaN thin films were investigated in terms of the gas mixing ratio, the RF power, the DC-bias voltage, and the process pressure. The characteristics of the plasma were estimated using optical emission spectroscopy (OES). The surface reactions after etching were investigated using X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES).

• 한국정보통신학회논문지
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• 제13권7호
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• pp.1393-1398
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• 2009

본 연구는 LCD용 비정질 실리콘박막트랜지스터의 제조공정중 가장 중요한 식각 공정에서 각 박막의 특성에 맞는 습식 및 건식식각공정을 개발하여 소자의 특성을 안정시키고자 한다. 본 연구의 수소화 된 비정질 실리콘 박막 트랜지스터는 Inverted Staggered 형태로 게이트 전극이 하부에 있다. 실험 방법은 게이트전극, 절연층, 전도층, 에치스토퍼 및 포토레지스터층을 연속 증착한다. 스토퍼층을 게이트 전극의 패턴으로 남기고, 그 위에 n+a-Si:H 층 및 NPR(Negative Photo Resister)을 형성시킨다. 상부 게이트 전극과 반대의 패턴으로 NPR층을 패터닝하여 그것을 마스크로 상부 n+a-Si:H 층을 식각하고, 남아있는 NPR층을 제거 한다. 그 위 에 Cr층을 증착한 후 패터닝 하여 소오스-드레인 전극을 위한 Cr층을 형성시켜 박막 트랜지스터를 제조한다. 여기서 각 박막의 패터닝은 식각 공정으로 각단위 박막의 특성에 맞는 건식 및 습식식각 공정이 필요하다. 제조한 박막 트랜지스터에서 가장 흔히 발생되는 문제는 주로 식각 공정시 over 및 under etching 이며, 정확한 식각을 위하여 각 박막에 맞는 식각공정을 개발하여 소자의 최적 특성을 제공하고자한다. 이와 같이 공정에 보다 엄격한 기준의 건식 및 습식식각 공정 그리고 세척 등의 처리공정을 정밀하게 실시하여 소자의 특성을 확실히 개선 할 수 있었다.

• Current Research on Agriculture and Life Sciences
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• 제24권
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• pp.23-27
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• 2006

육묘 생력화를 위한 적정 부직포규격을 선발하기 위하여 경상북도 농업기술원 시험포장에서 4월 20일부터 6월 1일 까지 파종기를 달리하여 부직포 규격별로 온도변화, 묘소질, 육묘 노동력 및 자재비 절감효과 등을 조사하였다. 부직포 규격별 묘생육은 부직포두께가 두꺼울수록 초장은 커지고, 엽수와 지상부건물중은 감소하였다. 부직포 규격별 매트형성 정도는 4월 파종구는 $40g/m^2$과 $60g/m^2$의 부직포 피복구에서 비닐피복과 같이 양호하였으나 $80g/m^2$과 $100g/m^2$은 불량하였으며, 6월 1일 파종구에서는 $40g/m^2$ 의 부직포 피복구에서만 매트형성이 양호하였고 그 외 부직포 규격 및 비닐터널피복에서는 불량하게 나타났다. 모의 지상부 생육특성 및 매트형성정도에서 1모작인 4월파종구의 경우는 $40g/m^2$와 $60g/m^2$의 부직포가, 2모작인 6월파종구에서는 $40g/m^2$ 의 부직포가 묘생육에 가장 적합한 것으로 조사되었다.

• 한국식품영양과학회지
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• 제20권2호
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• pp.139-147
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• 1991

반염건(半鹽乾)고등어 제조시 염지(鹽漬)처리 후 건조하는 공정에서 값싼 셀로판필름으로 포장하여 건조함으로써 제품의 제조 및 저장중 품질에 미치는 효과에 대해 실험하였다. 제조 직후 식품(C)와 (P)의 수분함량은 각각 56.2%, 63.6%로 (P)의 수분함량이 7.4%높았다. pH, 휘발성염기질소 및 아미노질소의 저장중 증가폭은 제품(P)가 적었다. 색조(L값, a값, b값)는 저장중 제품(C), (P) 모두 감소하는 경향이었다. 생균수는 저장초기에 약간 감소하다가 그 이후로 계속 증가하여 제품(C)는 14일째에 $8.5{\times}10^{6}/g$ 이었으나 제품(P)는 저장 21일째에도 $3.0{\times}10^{5}/g$이었다. TMAO는 저장중 감소하고 TMA는 증가하는 경향이었고 그 증감의 폭은 제품(P)가 적었다. TMA값과 과산화물값은 저장중 증가하다가 저장 14일 이후로 감소하였고 증가폭은 제품(P)가 적었다. 혼합지방산에 있어서 폴리엔산의 저장중 감소율 역시 제품(P)가 적었다. 관능 검사결과 저장 14일째에는 제품(C)는 (P)에 비해 현저히 품질이 떨어졌고 제품(P)는 저장 14일째에도 식용가능하엿다. 이화학적 및 관능적평가로 미루어보아 셀로판필름으로 포장한 후 건조하여 만든 반염 건고등어 제품(P)는 포장하지 않고 제조한 제품(C)에 비해 품질유지면에서 우수하다는 결론을 얻었다.