• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.12
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• pp.27-34
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• 2004

The study on the RF substrate circuit is necessary to model RF output characteristics of deep submicron MOSFETs below 0.2$\mum$ gate length that have bun commercialized by the recent development of Si submicron process. In this paper, direct extraction methods are developed to apply for a simple substrate resistance model as well as another substrate model with connecting resistance and capacitance in parallel. Using these extraction methods, better agreement with measured Y22-parameter up to 30 GHz is achieved for 0.15$\mum$ CMOS device by using the parallel RC substrate model rather than the simple resistance one, demonstrating the RF accuracy of the parallel model and extraction technique. Using this model, bias and gate length dependent curves of substrate parameters in the RF region are obtained by increasing drain voltage of 0 to 1.2V at deep submicron devices with various gate lengths of 0.11 to 0.5㎛ These new extraction data will greatly contribute to developing a scalable RF nonlinear substrate model.

• Korean Journal of Ecology and Environment
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• v.36 no.3 s.104
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• pp.344-355
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• 2003

Water quality model applicable paddy field was developed using field experiment during 1999 ${\sim}$ 2002. This model involves inputs from fertilization and sediment release as dirac delta function and continuous source function, respectively, and can simulate various processes such as ponded depth, surface drainage, total nitrogen concentration and total phosphorus concentration in a daily basis. The model was calibrated using data collected from field experiments which was irrigated with ground water and validated from field experiments which was irrigated with surface water. The nutrient concentration of surface water depended on the fertilization and dirac delta function can efficiently explain the valiance of nutrient concentration of surface water by fertilizer. As a result of calibration and validation, this model demonstrates good agreement. The model fit efficiencies ($R^2$) of ponded depth, surface concentration of TN and TP were 0.93,0.98 and 0.95, respectively for calibration, and those of TN and TP were 0.99 and 0.70, respectively for validation. We can apply lake and reservoir model to analysis paddy field considered with shallow ponded system, but it will need so many parameters and have much uncertainty. Fortunately, paddy field have a series of cultural practices yearly basis, such as irrigation-fertilization-forced drain-harvest with a similar time , so simple model may explain the mechanism for paddy field. Water quality model for paddy field developed in this study is simply, needs little parameters, but appeared high applicability to evaluate paddy filed drainage. We recommend this model to estimate nutrient loading from paddy field and establish best management practice.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.2
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• pp.105-112
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• 2017

In order to satisfy the diffusion of multimedia service in mobile communication and the demand for high-speed communication, it is essential to modify and improve high efficiency, wideband and nonlinear characteristic of multiband power amplifier. This research is designed to implement a single-stub matching circuit as a 2nd harmonic one that meets conditions of the Class-J power amplifier. Low characteristic impedance of the single-stub line is necessary to suit conditions of wideband Class-J. This research uses ceramic substrates having high permittivity to implement the single-stub line with low characteristic impedance, which eventually results in an amplifier satisfying the output impedance terms of Class-J in wideband frequency range. This result attributes to use of GaN HEMT packaged with a 2nd harmonic matching circuit and external fundamental circuit. The measurement results of the Class-J amplifier confirms the following characteristics: more than output power of 50 W(47 dBm) in bandwidth of 1.8~2.7 GHz(0.9GHz), maximum drain efficiency of 72.6 %, and maximum PAE characteristic of 66.5 %.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.6
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• pp.1099-1103
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• 2007

TFT's have been intensively researched for possible electronic and display applications. Through tremendous engineering and scientific efforts, a-Si:H TFT fabrication process was greatly improved. In this paper, the reason on defects occurring at a-Si:H TFT fabrication process is analyzed and solved, so a-Si:H TFT's yield is increased and reliability is improved. The a-Si:H TFT of this paper is inverted staggered type TFT. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr). We have fabricated a-SiN:H, conductor, etch-stopper and photo-resistor on gate electrode in sequence, respectively. We have deposited n+a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-slower pattern. The NPR layer by inverting pattern of upper Sate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFT made like this has problems at photo-lithography process caused by remains of PR. When sample is cleaned, this remains of PR makes thin chemical film on surface and damages device. Therefor, in order to improve this problem we added ashing process and cleaning process was enforced strictly. We can estimate that this method stabilizes fabrication process and makes to increase a-Si:H TFT's yield.

• Journal of Korea Water Resources Association
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• v.52 no.4
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• pp.235-243
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• 2019

Recently, urban inundation was frequently occurred due to the intensive rainfall exceeding marginal capacity of the flood control facility. Furthermore, needs for the underground storage facilities to mitigate urban flood are increasing according to rapidly accelerating urbanization. Thus, in this study, drainage efficiency in drain tunnel connecting to underground storage was investigated from the air-core measurements in the drop shaft against two types of inlet structure. In case of the spiral inlet, the multi-stage structure is introduced at the bottom of the inlet to improve the vortex induction effect at low inflow discharge (multi-stage spiral inlet). The average cross-sectional area of the air-core in the multi-stage spiral inlet is 10% larger than the tangential inlet, and show the highly air emission effect and the highly inflow efficiency at the high inflow discharge. In case of the tangential inlets, the air emission effect decreased after exceeding the maximum inflow discharge, which is required to maintain the inherent performance of the tangential inlet. From the measurements, the empirical formula for the cross-sectional area of the air-core according to locations inside the drop shaft was proposed in order to provide the experimental data available for the inlet model used in experiments.

• Journal of the Korean Association of Geographic Information Studies
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• v.17 no.1
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• pp.159-172
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• 2014

As greenhouse gas emissions have been increasing in the world, global warming is being recognized as a cause of the global problems like climate change. This is closely associated the fossil fuels. Thus renewable energy has been brought to the attention of many people as the upcoming alternative energy source to cope with the fossil drain and increased environmental regulations. Especially, the solar energy among renewable energy has drastically increased. In this study, we calculate on daylight ratio about the solar energy for buildings based on digital surface model. The digital surface model was made using the spatial information data. And it was simulated the shadow analysis using SAS. Therefore, it was suitable places to utilize the solar energy in the Gyeongsan city. Consequently, the daylight ratio was considered important factor to select region of the industry of the solar light power generation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.151-151
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• 2009

Recently, there has been increasing interest in amorphous oxide semiconductors to find alternative materials for an amorphous silicon or organic semiconductor layer as a channel in thin film transistors(TFTs) for transparent electronic devices owing to their high mobility and low photo-sensitivity. The fabriction of amorphous oxide-based TFTs at room temperature on plastic substrates is a key technology to realize transparent flexible electronics. Amorphous oxides allows for controllable conductivity, which permits it to be used both as a transparent semiconductor or conductor, and so to be used both as active and source/drain layers in TFTs. One of the materials that is being responsible for this revolution in the electronics is indium-zinc-tin oxide(IZTO). Since this is relatively new material, it is important to study the properties of room-temperature deposited IZTO thin films and exploration in a possible integration of the material in flexible TFT devices. In this research, we deposited IZTO thin films on polyethylene naphthalate substrate at room temperature by using magnetron sputtering system and investigated their properties. Furthermore, we revealed the fabrication and characteristics of top-gate-type transparent TFTs with IZTO layers, seen in Fig. 1. The experimental results show that by varying the oxygen flow rate during deposition, it can be prepared the IZTO thin films of two-types; One a conductive film that exhibits a resistivity of $2\times10^{-4}$ ohm${\cdot}$cm; the other, semiconductor film with a resistivity of 9 ohm${\cdot}$cm. The TFT devices with IZTO layers are optically transparent in visible region and operate in enhancement mode. The threshold voltage, field effect mobility, on-off current ratio, and sub-threshold slope of the TFT are -0.5 V, $7.2\;cm^2/Vs$, $\sim10^7$ and 0.2 V/decade, respectively. These results will contribute to applications of select TFT to transparent flexible electronics.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.4
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• pp.785-792
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• 2012

In this paper, a current-voltage characteristics of n-channel junctionless and inversion mode(IM) MuGFET, and p-channel junctionless and accumulation mode(AM) MuGFET has been measured and analyzed for the application in high speed and low power switching devices. From the variation of the threshold voltage and the saturation drain current with the substrate bias voltages, their variations in IM devices are larger than junctionless devices for n-channel devices, but their variations in junctioness devices are larger than AM devices for p-channel devices. The variations of transconductance with substrate biases are more significant in p-channel devices than n-channel devices. From the characteristics of subthreshold swing, it was observed that the S value is almost independent on the substrate biases in n-channel devices and p-channel junctionless devices but it is increased with the increase of the substrate biases in p-channel AM devices. For the application in high speed and low power switching devices using the substrate biases, IM device is better than junctionless devices for n-channel devices and junctionless device is better than AM devices for p-channel devices.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.35 no.1
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• pp.21-26
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• 2002

The behavior of the biological water treatment process on start-up operation was evaluated in the integrated recirculating aquaculture system consisting of a double drain type rearing tank ($2.5 m^3$), a sedimentation tank, a floating bead filter, a foam separator and a rotating biological contactor. A system was stocked with nile tilapia (Oreochromis niloticus) at an initial rearing density of $2\%$ for 2 weeks for acclimated rotating biological contactor. The total ammonia nitrogen (TAN) level increased to $13.6 g/m^3$ on day 4 after adding feed and was decreased to $0.3 g/m^3$ on day 7. The total suspended solid was completely removed during overall experimental period.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.35 no.1
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• pp.27-34
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• 2002

The performances of fish culture were evaluated in the integrated recirculating aquaculture system consisting of a double drain type rearing tank ($2.5 m^3$), a sedimentation tank, a floating bead filter, a foam separator and a rotating biological contactor. A system was stocked with nile tilapia at an initial rearing densities of $5\%$ (A), $5\%$ (B) and $7\%$ (C) oyer 30 days. Feed coefficient was 1.62, 1,79 and 1.80 and average daily growth rate was $0.452\%$, 0.u5% and $0.423\%$, respectively. The level of TAN was maintained below $1 g/m^3$ for $5\%$ of initial rearing density and $2-4 g/m^3$ for $7\%$. The dissolved oxygen level ($2-4 g/m^3$) was not optimum but should not be inhibitory to fish growth. The total suspended solid was completely removed during overall experimental period.