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http://dx.doi.org/10.5515/KJKIEES.2017.28.2.105

Wideband Class-J Power Amplifier Design Using Internal Matched GaN HEMT  

Lim, Eun-Jae (LIG Nex1)
Yoo, Chan-Se (Korea Electronics Technology Institute)
Kim, Do-Gueong (LIG Nex1)
Sun, Jung-Gyu (LIG Nex1)
Yoon, Dong-Hwan (LIG Nex1)
Yoon, Seok-Hui (LIG Nex1)
Rhee, Young-Chul (Department of Information & Communication Engineering, Kyung-nam University)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.28, no.2, 2017 , pp. 105-112 More about this Journal
Abstract
In order to satisfy the diffusion of multimedia service in mobile communication and the demand for high-speed communication, it is essential to modify and improve high efficiency, wideband and nonlinear characteristic of multiband power amplifier. This research is designed to implement a single-stub matching circuit as a 2nd harmonic one that meets conditions of the Class-J power amplifier. Low characteristic impedance of the single-stub line is necessary to suit conditions of wideband Class-J. This research uses ceramic substrates having high permittivity to implement the single-stub line with low characteristic impedance, which eventually results in an amplifier satisfying the output impedance terms of Class-J in wideband frequency range. This result attributes to use of GaN HEMT packaged with a 2nd harmonic matching circuit and external fundamental circuit. The measurement results of the Class-J amplifier confirms the following characteristics: more than output power of 50 W(47 dBm) in bandwidth of 1.8~2.7 GHz(0.9GHz), maximum drain efficiency of 72.6 %, and maximum PAE characteristic of 66.5 %.
Keywords
Class-J Power Amplifier; High Permittivity Ceramic Material; Packaging; High Efficiency;
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