• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.396-396
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• 2009

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.7
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• pp.433-438
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• 2015

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated by using $n^+$ Si wafers as gate electrodes. Indium (In), aluminum (Al), indium tin oxide (ITO), silver (Ag), and gold (Au) were employed for source and drain electrodes, and the mobility and the threshold voltage of ZTO TTFTs were observed as a function of electrode. The ZTO TTFTs adopting In as electrodes showed the highest mobility and the lowest threshold voltage. It was shown that Ag and Au are not suitable for the electrodes of ZTO TTFTs. As the results of this study, it is considered that the interface properties of electrode/ZTO are more influential in the properties of ZTO TTFTs than the conductivity of electrode.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1459-1462
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• 2005

The paper deals with the structural vibration and noise characteristics of pipe structures. In general, A structure bone noise has a great effect on the drain noise of toilets, and depends on the natural frequency of the related structures. In order to measure and to find the relationships between structural vibration and noise of the pipe structures, some experiments have been performed. Through the experiments, impact acceleration signal in time domain and magnitude of transfer function in the frequency domain have been investigated for three kinds of pipes. Transmission loss of pipes depending on the frequency ranges was also found by using small speakers as a sound source.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1288-1291
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• 2007

We investigated the effect of Cr thickness on the electrical properties of triisopropylsilyl pentacene organic thin-film transistor (OTFT) employing suspended source-drain electrode. With Cr thickness of 10 nm, the field-effect mobility, on/off ratio and subthreshold slope were $0.017\;cm^2/Vs$, $8.78\;{\times}\;10^3$ and 10 V/decade, respectively. By increasing the Cr thickness to 100 nm, the fieldeffect mobility was increased to $0.032\;cm^2/Vs$, on/off ratio to $1.12{\times}10^5$ and subthreshold slope to 1 V/decade.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.485-489
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• 2015

An accurate large-signal BSIM4 macro model including new empirical bias-dependent equations of the drain-source capacitance and channel resistance constructed from bias-dependent data extracted from S-parameters of RF MOSFETs is developed to reduce $S_{22}$-parameter error of a conventional BSIM4 model. Its accuracy is validated by finding the much better agreement up to 40 GHz between the measured and modeled $S_{22}$-parameter than the conventional one in the wide bias range.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.4
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• pp.1-7
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• 1985

In this paper, a more improved threshold voltage model dependent on drain voltage and substrate bias for short - channel enhancement - mode IGFET is presented. Especially, compared with the several recently published models, the error is sufficiently reduced with the precise analysis on the correction factor for short-channel effect and the calculated values using this model are also agreed well with the experimental data about 1$\mu$m - channel length device.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.182-188
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• 2006

An artificial neural network model for the microwave characteristics of an InGaAs/InP hemt for 70 nm gate length has been developed. The small-signal microwave parameters have been evaluated to determine the transconductance and drain-conductance. We have further investigated the frequency characteristics of the device. The neural network training have been done using the three layer architecture using Levenberg-Marqaurdt Backpropagation algorithm. The results have been compared with the experimental data, which shows a close agreement and the validity of our proposed model.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.3
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• pp.139-144
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• 2003

We report the results of extensive mixed mode simulations and theoretical analysis to quantify the contribution of the edge direct tunneling (EDT) current on the total gate leakage current of 80nm NMOSFET with SiO2 gate dielectric. It is shown that EDT has a profound impact on basic analog circuit building blocks such as sample-hold (S/H) circuit and the current mirror circuit. A transistor design methodology with zero gate-source/drain overlap is proposed to mitigate the EDT effect. This results in lower voltage droop in S/H application and better current matching in current mirror application. It is demonstrated that decreasing the overlap length also improves the basic analog circuit performance metrics of the transistor. The transistor with zero gate-source/drain overlap, results in better transconductance, input resistance, output resistance, intrinsic gain and unity gain transition frequency.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1502-1504
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• 1996

The effects of electrical stress in hydrogen passivated and as-fabricated poly-Si TFT's are investigated. It is observed that the charge trapping in the gate dielectric is the dominant degradation mechanism in poly-Si TFT's which has been stressed by the gate bias alone while the creation of defects in the poly-Si film is prevalent in gate and drain bias stressed devices. The degradation due to the gate bias stress is dramatically reduced with hydrogenation time while the degradation due to the gate and drain bias stress is increased a little. From the experimental results, it is considered that hydrogenation suppress the charge trapping at gate dielectrics as well as improve the characteristics of poly-Si TFT's.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2003.11a
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• pp.923-927
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• 2003

The aim of this study is to investigate the characteristics and quantity of the noise reduction by pipe material, wrapped pipe with glass wool and installed pipe height The characteristics of noise emission from drain-pipes is as follows. The noise reduction pipe in PVC can reduce noise levels in 7-10㏈ and the cast-iron pipe can reduce in 14㏈compared with the normal PVC pipe. In these days, the glass wool was used for preventing the burst and the noise reduction. But the glass wool for wrapping pipe is not effective to the noise reduction. The characteristics of noise emission from various installed pipe height were measured As the ceiling space of the remodeled building was raised, the noise level was troubled by increasing of the vertical pipe length.