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http://dx.doi.org/10.4313/JKEM.2015.28.7.433

Influence of Source/Drain Electrodes on the Properties of Zinc Tin Oxide Transparent Thin Film Transistors  

Ma, Tae Young (Department of Electrical Engineering & ERI, Gyeongsang National University)
Cho, Mu Hee (Department of Electrical Engineering & ERI, Gyeongsang National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.28, no.7, 2015 , pp. 433-438 More about this Journal
Abstract
Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated by using $n^+$ Si wafers as gate electrodes. Indium (In), aluminum (Al), indium tin oxide (ITO), silver (Ag), and gold (Au) were employed for source and drain electrodes, and the mobility and the threshold voltage of ZTO TTFTs were observed as a function of electrode. The ZTO TTFTs adopting In as electrodes showed the highest mobility and the lowest threshold voltage. It was shown that Ag and Au are not suitable for the electrodes of ZTO TTFTs. As the results of this study, it is considered that the interface properties of electrode/ZTO are more influential in the properties of ZTO TTFTs than the conductivity of electrode.
Keywords
Zinc tin oxide; Transparent thin film transistors; Electrodes; Mobility; Threshold voltage;
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