• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.133-133
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• 2008

Recently, as the down-scailing of field-effect transistor devices continues, Schottky-barrier field-effect transistors (SB-FETs) have attracted much attention as an alternative to conventional MOSFETs. SB-FETs have advantages over conventional devices, such as low parasitic source/drain resistance due to their metallic characteristics, low temperature processing for source/drain formation and physical scalability to the sub-10nm regime. The good scalability of SB-FETs is due to their metallic characteristics of source/drain, which leads to the low resistance and the atomically abrupt junctions at metal (silicide)-silicon interface. Nevertheless, some reports show that SB-FETs suffer from short channel effect (SCE) that would cause severe problems in the sub 20nm regime.[Ouyang et al. IEEE Trans. Electron Devices 53, 8, 1732 (2007)] Because source/drain barriers induce a depletion region, it is possible that the barriers are overlapped in short channel SB-FETs. In order to analyze the SCE of SB-FETs, we carried out systematic studies on the Schottky barrier overlapping in short channel SB-FETs using a SILVACO ATLAS numerical simulator. We have investigated the variation of surface channel band profiles depending on the doping, barrier height and the effective channel length using 2D simulation. Because the source/drain depletion regions start to be overlapped each other in the condition of the $L_{ch}$~80nm with $N_D{\sim}1\times10^{18}cm^{-3}$ and $\phi_{Bn}$ $\approx$ 0.6eV, the band profile varies as the decrease of effective channel length $L_{ch}$. With the $L_{ch}$~80nm as a starting point, the built-in potential of source/drain schottky contacts gradually decreases as the decrease of $L_{ch}$, then the conduction and valence band edges are consequently flattened at $L_{ch}$~5nm. These results may allow us to understand the performance related interdependent parameters in nanoscale SB-FETs such as channel length, the barrier height and channel doping.

• Proceedings of the Korean Fiber Society Conference
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• 2007.11a
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• pp.249-250
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• 2007

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• 한국도로학회:학술대회논문집
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• 2002.10a
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• pp.287-294
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• 2002

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.353-354
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• 2002

This study represents the newly advanced formulation of hydraulic fluids for extended drain interval and introduces the performance results of used oil samples from various excavators. The used oil samples, in this paper, show that there is a sharp change in viscosity drop and moderate additive depletion. For the extension of hydraulic fluid life. it is necessary to improve the stability of viscosity and oxidation. New target properties from the used oil analysis were proposed for extended life. Hydraulic oil with the viscosity index of 140 and improved thermal stability consists of group III base oil, showed the possibility of extension of fluid life.

• KIEAE Journal
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• v.4 no.3
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• pp.37-44
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• 2004

In this study, foreign and domestic noise criteria on walls, floors, and water supply facilities were reviewed and the results are as follows : regulation can be divided two things, one is on thickness the other is sound insulation performance. Green Building regulation based on the law and this have sound classification systems. Since these regulations are not established in Korea. The noise regulation on water supply-drain facilities and domestic guideline on interior noise level is needed. Foreign regulations are stricter than those of ours. And those has sound classification system for the better acoustic condition of inhabitants'.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.346-346
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• 2010

A capacitorless one transistor dynamic random access memory (1T-DRAM) on silicon-germanium-on-insulator substrate was investigated. SGOI technology can make high effective mobility because of lattice mismatch between the Si channel and the SiGe buffer layer. To evaluate memory characteristics of 1T-DRAM, the floating body effect is generated by impact ionization (II) and gate induced drain leakage (GIDL) current. Compared with use of impact ionization current, the use of GIDL current leads to low power consumption and larger sense margin.

• Journal of Sensor Science and Technology
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• v.8 no.6
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• pp.434-439
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• 1999

Differential field effect transistors with double gate metal for integrated humidity sensors have been fabricated and the drain current drift characteristics to relative humidity have been investigated. The aspect ratio was 250/50 for both transistors to get the current difference between the sensing device and non-sensing one. The normalized drain current of the fabricated humidity sensitive field effect transistors increases from 0.12 to 0.3, as relative humidity increases from 30% to 90%.

• Proceeding of EDISON Challenge
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• 2015.03a
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• pp.357-364
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• 2015

In this work, we investigate the quantum effects exhibited from ultra-thin GAA(gate-all-around) Nanowire FETs for Sub 14nm Technology. We face designing challenges particularly short channel effects (SCE). However traditional MOSFET SCE models become invalid due to unexpected quantum effects. In this paper, we investigated various performance factors of the GAA Nanowire FET structure, which is promising future device. We observe a variety of quantum effects that are not seen when large scale. Such are source drain tunneling due to short channel lengths, drastic threshold voltage increase caused by quantum confinement for small channel area, leakage current through thin gate oxide by tunneling, induced source barrier lowering by fringing field from drain enhanced by high k dielectric, and lastly the I-V characteristic dependence on channel materials and transport orientations owing to quantum confinement and valley splitting. Understanding these quantum phenomena will guide to reducing SCEs for future sub 14nm devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.157-158
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• 2000

In this study, to get the larger drain current of the device under the same operation condition as the conventional gate dielectric SiNx thin film transistor devices, we introduced new gate dielectric $Ta_2O_5$ thin film which has high dielectric constant $({\sim}25)$ and good electrical reliabilities. For the application for the TFT device, we fabricated the $Ta_2O_5$ gate dielectric TFT on the low-temperature-transformed polycrystalline silicon thin film using the self-aligned implantation processing technology for source/drain and gate doping. The $Ta_2O_5$ gate dielectric TFT showed better electrical performance than SiNx gate dielectric TFT because of the higher dielectric constant.

• Journal of The Korean Society of Agricultural Engineers
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• v.57 no.6
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• pp.69-77
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• 2015

The objective of this study was to evaluate the performance of selected sediment reduction methods to reduce sediment discharges from drain and irrigation of different types (concrete canals, soil canals). This study was carried out to analysis for the suspended sediment concentration and sediment of drain and irrigation by velocity of flow. The results of study were analysised and summerized as follow. Sedimentation characteristics and size of soil sediment from the concrete and soil canals of downstream smaller than upstream. Suspended sediment concentration and flow times from the suggestion canals bigger than open canal. Structural shape of the canal decreases the velocity of flow also affects the suspended sediment concentration and flow times.