한국정보디스플레이학회:학술대회논문집
- 2000.01a
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- Pages.157-158
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- 2000
Characterization of Thin Film Transistor using $Ta_2O_5$ Gate Dielectric
- Um, Myung-Yoon (School of Materials Science and Engineering, Seoul National University) ;
- Lee, Seok-Kiu (School of Materials Science and Engineering, Seoul National University) ;
- Kim, Hyeong-Joon (School of Materials Science and Engineering, Seoul National University)
- Published : 2000.01.13
Abstract
In this study, to get the larger drain current of the device under the same operation condition as the conventional gate dielectric SiNx thin film transistor devices, we introduced new gate dielectric
Keywords