• Journal of the Korea Institute of Information and Communication Engineering
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• 제11권4호
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• pp.760-765
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• 2007

In this paper, the threshold voltage roll-off and drain induced barrier lowering(DIBL) have been analyzed for nano structure double gate FinFET. The analytical current model has been developed, including thermionic current and tunneling current models. The potential distribution by Poisson equation and carrier distribution by Maxwell-Boltzman statistics were used to calculate thermionic omission current, and WKB(Wentzel- Kramers-Brillouin) approximation to tunneling current. The threshold voltage roll-offs are obtained by simple adding two currents since two current is independent. The threshold voltage roll-off by this model are compared with those by two dimensional simulation and two values are good agreement. Since the tunneling current increases especially under channel length of 10nm, the threshold voltage roll-off and DIBL are very large. The channel and gate oxide thickness have to be fabricated as thin as possible to decrease this short channel effects, and this process has to be developed.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 한국정보통신학회 2014년도 춘계학술대회
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• pp.748-751
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• 2014

This paper has analyzed threshold voltage movement for channel doping concentration of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is generally fabricated with low doping channel and fully depleted under operation. Since impurity scattering is lessened, asymmetric DGMOSFET has the adventage that high speed operation is possible. The threshold voltage movement, one of short channel effects necessarily occurred in fine devices, is investigated for the change of channel doping concentration in asymmetric DGMOSFET. The analytical potential distribution of series form is derived from Possion's equation to obtain threshold voltage. The movement of threshold voltage is investigated for channel doping concentration with parameters of channel length, channel thickness, oxide thickness, and doping profiles. As a result, threshold voltage increases with increase of doping concentration, and that decreases with decrease of channel length. Threshold voltage increases with decrease of channel thickness and bottom gate voltage. Lastly threshold voltage increases with decrease of oxide thickness.

• Design & Manufacturing
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• 제2권6호
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• pp.49-55
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• 2008

Double-injection molding can inject two different materials or two colors in the same mold and process. If this injection process use, product has ability because the base part maintain strength and specified part can inject soft-material. It makes the cost down by single operation automatically for saving wages. In this paper, we designed double-injection mold for automobile remote control to inject secondary using this part as insert after inject external appearance of product. CAE analysis was progressed gate location and runner size as variable and analysis result is reflected in mold design process. As a result, it could solved badness that is generated at the conventional mold. Additionally, cost is downed by reducing loss of runner as well as could omit painting process because surface of finished product is improved through new mold.

• Publications of The Korean Astronomical Society
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• 제25권4호
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• pp.141-154
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• 2010

In the beginning of the Joseon dynasty, the Royal Astronomical Bureau (觀象監, shortly RAB) was established. After the double RAB had settled down by King Sejong (世宗), it continued to function until 1907. Before the Japanese invasion of Korea in 1592, the Joseon court had the Inner RAB in the Gyeongbok Palace (景福宮) and the Outer RAB in the Northen District Gwangwha-Bang (北部廣化坊) at the western side of the Changdeuk Palace (昌德宮). In the reign of King Sukjong (肅宗) the double system of the RAB was transformed into the Geumho-Gate (金虎門) Outer RAB and the Gaeyang-Gate (開陽門) Outer RAB. During the reconstruction of the Gyeongbok Palace in the early reign of King Gojong (高宗), the Gaeyang-Gate Outer RAB was replaced by the Yeongchu-Gate (迎秋門) Outer RAB in 1865. All RAB had the Royal Astronomical Observatory (觀天臺, RAO hereinafter), so called the Soganui-platform (小簡儀臺) on which the Soganui (小簡儀) has been put. The Soganui (小簡儀) is a small simplified armillary sphere. While the Gwangwha-Bang RAO handed down from the reign of King Sejong still exists, other RAOs, such as Gyeongbok Palace RAO, Gaeyang-Gate and Yeongchu-Gate RAOs, do not remain. According to our study, the Changgyeong Palace (昌慶宮) RAO was not indeed the RAO with the Soganui.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2009년도 제36회 동계학술대회 초록집
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• pp.182.1-182.1
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• 2009

• The Magazine of Kiice
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• 제3권1호
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• pp.37-40
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• 2002

• Journal of the Korea Institute of Information and Communication Engineering
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• 제10권3호
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• pp.479-485
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• 2006

The double gate(DG) MOSFET is a promising candidate to further extend the CMOS scaling and provide better control of short channel effect(SCE). DGMOSFETs, having ultra thin undoped Si channel for SCEs control, ale being validated for sub-20nm scaling. A novel analytical transport model for the subthreshold mode of DGMOSFETs is proposed in this paper. The model enables analysis of short channel effect such as the subthreshold swing(SS), the threshold voltage roil-off$({\Delta}V_{th})$ and the drain induced barrier lowering(DIBL). The proposed model includes the effects of thermionic emission and quantum tunneling of carriers through the source-drain barrier. An approximative solution of the 2D Poisson equation is used for the distribution of electric potential, and Wentzel-Kramers-Brillouin approximation is used for the tunneling probability. The new model is used to investigate the subthreshold characteristics of a double gate MOSFET having the gate length in the nanometer range $(5-20{\sim}nm)$ with ultra thin gate oxide and channel thickness. The model is verified by comparing the subthreshold swing and the threshold voltage roll-off with 2D numerical simulations. The proposed model is used to design contours for gate length, channel thickness, and gate oxide thickness.

• Proceedings of the IEEK Conference
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.897-900
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• 2005

RF linearity of double-gate MOSFETs is investigated using accurate two-dimensional simulations. The linearity has been analyzed using the Talyor series. Transconductance is dominant nonlinear source of CMOS. It is shown that DGMOSFET linearity can be improved by a careful optimization of channel thickness, gate oxide thickness, gate length, overlap length and channel doping concentration. The minimum $P_{IP3}$ data are compared in each case. It is shown that DG-MOSFET linearity can be improved by a careful optimization of channel thickness, gate oxide thickness, gate length, overlap length and channel doping concentration..

• Proceedings of the KSME Conference
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.897-902
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• 2007

The turnover-type sluice gate is typically actuated by the open circuit hydrauic system since the single-rod cylinder is used rather than the double-rod cylinder. However, here the closed circuit hydrauic system is applied for the operation of turnover-type sluice gate for the purpose of convenient operation. The closed circuit hydraulic system of turnover-type sluice gate is composed of a bi-directional pump, single-rod cylinders, pilot operated check valves, check valves and a counter balance valve. The usefulness of the closed circuit hydraulic system is verified for the several operational conditions by the computer simulations.

• Progress in Superconductivity
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• 제11권2호
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• pp.158-161
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• 2010

We measured the critical current of a Cooper pair transistor consisting of two Josephson junctions and a gate electrode. The Cooper pair transistors were fabricated by using electron-beam lithography and double-angle evaporation technique. The Gate voltage dependence of critical current was measured by observing voltage jumps at various gate voltages while sweeping bias current. The observed oscillation was 2e-periodic, which shows the Cooper pair transistor had low level of quasiparticle poisoning.