Oscillation of Critical Current by Gate Voltage in Cooper Pair Transistor

Cooper pair transistor에서 gate voltage에 의한 임계전류의 진동

  • Song, W. (Korea Research Institute of Standards and Science) ;
  • Chong, Y. (Korea Research Institute of Standards and Science) ;
  • Kim, N. (Korea Research Institute of Standards and Science)
  • Received : 2010.03.24
  • Accepted : 2010.04.05
  • Published : 2010.04.30

Abstract

We measured the critical current of a Cooper pair transistor consisting of two Josephson junctions and a gate electrode. The Cooper pair transistors were fabricated by using electron-beam lithography and double-angle evaporation technique. The Gate voltage dependence of critical current was measured by observing voltage jumps at various gate voltages while sweeping bias current. The observed oscillation was 2e-periodic, which shows the Cooper pair transistor had low level of quasiparticle poisoning.

Keywords

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