• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.12
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• pp.778-784
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• 2017

In this paper, we propose wired and wireless distributed control systems designed to improve the freight logistics efficiency and verify wired distributed control systems. The verification condition required that 50 cargo vehicles be connected and operated to travel 21 km from Busan Sinhang station to Jinlye Station at an average speed of about 100km/h. The verification results show that the traction output and braking output of the control and controlled cars are dispersed by the wired distributed control system. The application is expected to more than double the efficiency of the logistics compared to the existing freight transportation system. However, in the case of the wired distributed control system, cable installation and maintenance are difficult, and it is impossible to change the combination of freight vehicles. Through the verification of the wired distributed control system, the applicability of distributed control systems to freight vehicles in Korea was confirmed and the system was further developed to produce a wireless distributed control system. In order to apply the wireless distributed control system, a propagation environment analysis for the ISM band was performed in the testbed and, as a result, it was confirmed that Wifi technology using the ISM band could be utilized. In order to use the WDP (Wireless Distributed Power) devices newly installed in the target vehicles, the transmission / reception control signals associated with the propulsion / braking / total control devices are defined. In the case of wireless distributed control systems, the convenience of their application and operation is guaranteed, but reliability and emergency safety measures should because of the dependence of the control of the vehicle on radio signals.

• Korean Journal of Materials Research
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• v.26 no.3
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• pp.117-122
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• 2016

White organic light-emitting diodes with a structure of indium-tin-oxide [ITO]/N,N-diphenyl-N,N-bis-[4-(phenylm-tolvlamino)-phenyl]-biphenyl-4,4-diamine [DNTPD]/[2,3-f:2, 2-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile [HATCN]/1,1-bis(di-4-poly-aminophenyl) cyclo -hexane [TAPC]/emission layers doped with three color dopants/4,7-diphenyl-1,10-phenanthroline [Bphen]/$Cs_2CO_3$/Al were fabricated and evaluated. In the emission layer [EML], N,N-dicarbazolyl-3,5-benzene [mCP] was used as a single host and bis(2-phenyl quinolinato)-acetylacetonate iridium(III) [Ir(pq)2acac]/fac-tris(2-phenylpyridinato) iridium(III) $[Ir(ppy)_3]$/iridium(III) bis[(4,6-di-fluoropheny)-pyridinato-N,C2] picolinate [FIrpic] were used as red/green/blue dopants, respectively. The fabricated devices were divided into five types (D1, D2, D3, D4, D5) according to the structure of the emission layer. The electroluminescence spectra showed three peak emissions at the wavelengths of blue (472~473 nm), green (495~500 nm), and red (589~595 nm). Among the fabricated devices, the device of D1 doped in a mixed fashion with a single emission layer showed the highest values of luminance and quantum efficiency at the given voltage. However, the emission color of D1 was not pure white but orange, with Commission Internationale de L'Eclairage [CIE] coordinates of (x = 0.41~0.45, y = 0.41) depending on the applied voltages. On the other hand, device D5, with a double emission layer of $mCP:[Ir(pq)_2acac(3%)+Ir(ppy)_3(0.5%)]$/mCP:[FIrpic(10%)], showed a nearly pure white color with CIE coordinates of (x = 0.34~0.35, y = 0.35~0.37) under applied voltage in the range of 6~10 V. The luminance and quantum efficiency of D5 were $17,160cd/m^2$ and 3.8% at 10 V, respectively.

• KIPS Transactions on Software and Data Engineering
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• v.2 no.10
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• pp.669-678
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• 2013

Recently, because the portable devices became popular, it is easily to see that each person carries more than just one portable device and the use of the smartphone stretches as time goes by. After the smartphone has propagated rapidly, the total usage of the smartphone applications has also increased. But still, each application store has a different platform to develop and to apply an application. The application store is divided into two big markets, the Android and the Apple. So the developers have to develop their application by using these two different platforms. Developing into two different platforms almost makes a double development cost. And for the other platforms, the weakness is, which still have a small market breadth like Bada is not about the cost, but about drawing the proper developers for the given platform application development. The web application is rising up as the solution to solve these problems, reducing the cost and time in developing applications for every platform. For web applications don't need to make a vassal relationship with application markets platform. Which makes it possible for an application to operate properly in every portable devices and reduces the time and cost in developing. Therefore, all of the application markets could be united into one big market through a protocol which will connect each web applications market. But, still there is no standard for the web application store and no current web application store is possible to interlock with other web application stores. In this paper, we are trying to suggest a protocol by developing a prototype and prove that this protocol can supplement the current weakness.

• KIPS Transactions on Computer and Communication Systems
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• v.12 no.9
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• pp.263-272
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• 2023

Industrial Internet of Things (IIoT) is an important factor in increasing production efficiency in industrial sectors, along with data collection, exchange and analysis through large-scale connectivity. However, as traffic increases explosively due to the recent spread of IIoT, an allocation method that can efficiently process traffic is required. In this thesis, I propose a two-stage task offloading decision method to increase successful task throughput in an IIoT environment. In addition, I consider a hybrid offloading system that can offload compute-intensive tasks to a mobile edge computing server via a cellular link or to a nearby IIoT device via a Device to Device (D2D) link. The first stage is to design an incentive mechanism to prevent devices participating in task offloading from acting selfishly and giving difficulties in improving task throughput. Among the mechanism design, McAfee's mechanism is used to control the selfish behavior of the devices that process the task and to increase the overall system throughput. After that, in stage 2, I propose a multi-armed bandit (MAB)-based task offloading decision method in a non-stationary environment by considering the irregular movement of the IIoT device. Experimental results show that the proposed method can obtain better performance in terms of overall system throughput, communication failure rate and regret compared to other existing methods.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.73-76
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• 2010

A two-facet approach was used to investigate the parametric performance of functional high-speed DDR3 (Double Data Rate) DRAM (Dynamic Random Access Memory) die placed in different types of BGA (Ball Grid Array) packages: wire-bonded BGA (FBGA, Fine Ball Grid Array), flip-chip (FCBGA) and lead-bonded $microBGA^{(R)}$. In the first section, packaged live DDR3 die were tested using automatic test equipment using high-resolution shmoo plots. It was found that the best timing and voltage margin was obtained using the lead-bonded microBGA, followed by the wire-bonded FBGA with the FCBGA exhibiting the worst performance of the three types tested. In particular the flip-chip packaged devices exhibited reduced operating voltage margin. In the second part of this work a test system was designed and constructed to mimic the electrical environment of the data bus in a PC's CPU-Memory subsystem that used a single DIMM (Dual In Line Memory Module) socket in point-to-point and point-to-two-point configurations. The emulation system was used to examine signal integrity for system-level operation at speeds in excess of 6 Gb/pin/sec in order to assess the frequency extensibility of the signal-carrying path of the microBGA considered for future high-speed DRAM packaging. The analyzed signal path was driven from either end of the data bus by a GaAs laser driver capable of operation beyond 10 GHz. Eye diagrams were measured using a high speed sampling oscilloscope with a pulse generator providing a pseudo-random bit sequence stimulus for the laser drivers. The memory controller was emulated using a circuit implemented on a BGA interposer employing the laser driver while the active DRAM was modeled using the same type of laser driver mounted to the DIMM module. A custom silicon loading die was designed and fabricated and placed into the microBGA packages that were attached to an instrumented DIMM module. It was found that 6.6 Gb/sec/pin operation appears feasible in both point to point and point to two point configurations when the input capacitance is limited to 2pF.

• Journal of Sensor Science and Technology
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• v.3 no.1
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• pp.5-11
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• 1994

This paper describes the characteristics of a piezoresistive pressure sensor fabricated on a SOI (Si-on-insulator) structure, in which the SOI structures of Si/$SiO_{2}$/Si and Si/$Al_{2}O_{3}$/Si were formed by SDB (Si-wafer direct bonding) technology and hetero-epitaxial growth, respectively. The SOI pressure sensors using the insulator of a SOI structure as the dielectrical isolation layer of piezoresistors, were operated at higher temperatures up to $300^{\circ}C$. In the case of pressure sensors using the insulator of a SOI structure as an etch-stop layer during the formation of thin Si diaphragms, the pressure sensitivity variation of the SOI pressure sensors was controlled to within a standard deviation of ${\pm}2.3%$ over 200 devices. Moreover, the pressure sensors fabricated on the double SOI ($Si/Al_{2}O_{3}/Si/SiO_{2}/Si$) structures formed by combining SDB technology with epitaxial growth also showed very excellent characteristics with high-temperature operation and high-resolution.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.10a
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• pp.24-24
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• 2003

For the elderly, achieving a close-to-normal ambulation is important for activities of daily life. Recent researches of SE(Silver Engineering) restoring physical ability would help the elderly by developing the advanced gait assisting devices and orthoses. For the applications using the advanced technologies, the gait characteristics of the elderly must be understood. However, a few studies were performed to investigate the physiological or pathological gaits. The purpose of this study is to provide the gait analysis data and also to investigate relationships between alignment of the lower limb, foot progression angle and knee joint moments in the healthy elderly. By participating a total of 20 healthy elderly persons in this study, the following facts were found: 1) Cadence showed 114.8 steps/min, gait speed showed 1.05 m/s, time per a stride showed 1.06 sec, time per a step showed 0.53 sec, single-supporting phase was 0.41 sec, double-supporting phase was 0.24 sec, stride length was 1.04m, Step length was 0.56m; 2) The maximum knee flexion angle through swing phase showed left 46.82$^{\circ}$, right 40.19$^{\circ}$ and the maximum knee extension angle showed left -1.32$^{\circ}$, right 2.01$^{\circ}$. Knee varus showed left 26.90$^{\circ}$, right 30.93$^{\circ}$; 3) The maximum knee flexion moment showed left 0.363 Nm/kg, right 0.464 Nm/kg, The maximum knee extension moment showed left 0.389 Nm/kg, right 0.463 Nm/kg. The maximum knee adduction moment showed left 0.332 Nm/kg, right 0.379 Nm/kg. The maximum internal rotational moment showed left 0.13 Nm/kg, right 0.140 Nm/kg; 4) The subjects who had varus alignment of the lower extremity had statistically higher in knee adduction moment in mid stance phase; and 5) The subjects who had large foot progression angle had statistically lower in knee adduction moment in late stance phase.

• Tribology and Lubricants
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• v.33 no.3
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• pp.106-111
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• 2017

Sapphire is an anisotropic material with excellent physical and chemical properties and is used as a substrate material in various fields such as LED (light emitting diode), power semiconductor, superconductor, sensor, and optical devices. Sapphire is processed into the final substrate through multi-wire saw, double-side lapping, heat treatment, diamond mechanical polishing, and chemical mechanical polishing. Among these, chemical mechanical polishing is the key process that determines the final surface quality of the substrate. Recent studies have reported that the material removal characteristics during chemical mechanical polishing changes according to the crystal orientations, however, detailed analysis of this phenomenon has not reported. In this work, we carried out chemical mechanical polishing of C(0001), R($1{\bar{1}}02$), and A($11{\bar{2}}0$) substrates with different sapphire crystal planes, and analyzed the effect of crystal orientation on the material removal characteristics and their correlations. We measured the material removal rate and frictional force to determine the material removal phenomenon, and performed nano-indentation to evaluate the material characteristics before and after the reaction. Our findings show that the material removal rate and frictional force depend on the crystal orientation, and the chemical reaction between the sapphire substrate and the slurry accelerates the material removal rate during chemical mechanical polishing.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.47-51
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• 2013

A high power MOSFET switch based on a 0.35 ${\mu}m$ CMOS process has been developed for the protection IC of a rechargeable battery. In this process, a vertical double diffused MOS (VDMOS) using 3 ${\mu}m$-thick epi-taxy layer is integrated with a Zener diode. The p-n+Zener diode is fabricated on top of the VDMOS and used to protect the VDMOS from high voltage switching and electrostatic discharge voltage. A fully integrated digital circuit with power devices has also been developed for a rechargeable battery. The experiment indicates that both breakdown voltage and leakage current depend on the doping concentration of the Zener diode. The dependency of the breakdown voltage on doping concentration is in a trade-off relationship with that of the leakage current. The breakdown voltage is obtained to exceed 14 V and the leakage current is controlled under 0.5 ${\mu}A$. The proposed integrated module with the application of the power MOSFET indicates the high performance of the protection IC, where the overcharge delay time and detection voltage are controlled within 1.1 s and 4.2 V, respectively.

• Journal of Korean Neurosurgical Society
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• v.56 no.2
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• pp.103-107
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• 2014

Objective : This study analyzed clinical and radiological outcomes of a zero-profile anchored spacer (Zero-P) and conventional cage-plate (CCP) for single level anterior cervical discectomy and fusion (ACDF) to compare the incidence and difference of postoperative dysphagia with both devices. Methods : We retrospectively reviewed our experiences of single level ACDF with the CCP and Zero-P. From January 2011 to December 2013, 48 patients who had single level herniated intervertebral disc were operated on using ACDF, with CCP in 27 patients and Zero-P in 21 patients. Patients who received more than double-level ACDF or combined circumferential fusion were excluded. Age, operation time, estimated blood loss (EBL), pre-operative modified Japanese Orthopaedic Association (mJOA) scores, post-operative mJOA scores, achieved mJOA scores and recovery rate of mJOA scores were assessed. Prevertebral soft tissue thickness and postoperative dysphagia were analyzed on the day of surgery, and 2 weeks and 6 months postoperatively. Results : The Zero-P group showed same or favorable clinical and radiological outcomes compared with the CCP group. Postoperative dysphagia was significantly low in the Zero-P group. Conclusions : Application of Zero-P may achieve favorable outcomes and reduce postoperative dysphagia in single level ACDF.