• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.7
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• pp.102-108
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• 2013

In manufacturing of solution-processed organic electronic devices, a spin coating method is frequently used, but which has a big problem. Solvent in a solution has a decisive effect such as physical and chemical damage for successive solution-based film deposition. Such a severe damage by solvent restricts for fabricating building blocks of multi-layered films from solutions. In this work, it will be shown that a proper combination of well-known solvents gives a chance to fabricate multi-layered film, also this new method was applied to make organic field effect transistor. Two types of bottom gate, bottom contact transistors were fabricated, one of which is fabricated by conventional single spin coating method, the other fabricated by double spin coating method. Compared with the electrical characteristics in a single spin coated transistor, the leakage current between source and gate electrode was decreased, ON state current was increased, and the extracted saturation mobility was multiplied more than 2.7 time for double spin coated transistors. It is suggested that the multiple coated gate dielectric structure is more desirable for high performance organic ferroelectric field effect transistors.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.324-325
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• 2014

Quantum wells infrared photodetectors (QWIPs) have been used to detect infrared radiations through the principle based on the localized stated in quantum wells (QWs) [1]. The mature III-V compound semiconductor technology used to fabricate these devices results in much lower costs, larger array sizes, higher pixel operability, and better uniformity than those achievable with competing technologies such as HgCdTe. Especially, GaAs/AlGaAs QWIPs have been extensively used for large focal plane arrays (FPAs) of infrared imaging system. However, the research efforts for increasing sensitivity and operating temperature of the QWIPs still have pursued. The modification of heterostructures [2] and the various fabrications for preventing polarization selection rule [3] were suggested. In order to enhance optical performances of the QWIPs, double barrier quantum well (DBQW) structures will be introduced as the absorption layers for the suggested QWIPs. The DBWQ structure is an adequate solution for photodetectors working in the mid-wavelength infrared (MWIR) region and broadens the responsivity spectrum [4]. In this study, InGaAs/GaAs/AlGaAs double barrier quantum well infrared photodetectors (DB-QWIPs) are successfully fabricated and characterized. The heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIPs are grown by molecular beam epitaxy (MBE) system. Photoluminescence (PL) spectroscopy is used to examine the heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIP. The mesa-type DB-QWIPs (Area : $2mm{\times}2mm$) are fabricated by conventional optical lithography and wet etching process and Ni/Ge/Au ohmic contacts were evaporated onto the top and bottom layers. The dark current are measured at different temperatures and the temperature and applied bias dependence of the intersubband photocurrents are studied by using Fourier transform infrared spectrometer (FTIR) system equipped with cryostat. The photovoltaic behavior of the DB-QWIPs can be observed up to 120 K due to the generated built-in electric field caused from the asymmetric heterostructures of the DB-QWIPs. The fabricated DB-QWIPs exhibit spectral photoresponses at wavelengths range from 3 to $7{\mu}m$. Grating structure formed on the window surface of the DB-QWIP will induce the enhancement of optical responses.

• ETRI Journal
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• v.34 no.6
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• pp.962-965
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• 2012

In this letter, we propose a new RESURF stepped oxide (RSO) process to make a semi-superjunction (semi-SJ) trench double-diffused MOSFET (TDMOS). In this new process, the thick single insulation layer ($SiO_2$) of a conventional device is replaced by a multilayered insulator ($SiO_2/SiN_x/TEOS$) to improve the process and electrical properties. To compare the electrical properties of the conventional RSO TDMOS to those of the proposed TDMOS, that is, the nitride_RSO TDMOS, simulation studies are performed using a TCAD simulator. The nitride_RSO TDMOS has superior properties compared to those of the RSO TDMOS, in terms of drain current and on-resistance, owing to a high nitride permittivity. Moreover, variations in the electrical properties of the nitride_RSO TDMOS are investigated using various devices, pitch sizes, and thicknesses of the insulator. Along with an increase of the device pitch size and the thickness of the insulator, the breakdown voltage slowly improves due to a vertical field plate effect; however, the drain current and on-resistance degenerate, owing to a shrinking of the drift width. The nitride_RSO TDMOS is successfully fabricated, and the blocking voltage and specific on-resistance are 108 V and $1.1m{\Omega}cm^2$, respectively.

• Structural Engineering and Mechanics
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• v.18 no.4
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• pp.475-491
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• 2004

Anchorage devices play an important role in post-tensioned bridge structures since they must sustain heavy loads in order to permit the transfer of the prestressing force to the structure. In external prestressing, the situation is even more critical since the anchorage mechanisms, with the deviators, are the only links between the structure and the tendons throughout the service life of the structure. The behaviour of anchorage devise may be studied by using the finite element method. To do so, each component of the anchorage must be adequately represented in order to approximate the anchor mechanism as accurately as possible. In particular, the modelling of the jaw/tendon device may be carried out using the real geometry of these two components with an appropriate constitutive contact law or by replacing these components by a single equivalent. This paper presents the numerical study of a mono-strand anchorage device. The results of a comparison between two different representations of the jaw/tendon device, either as two distinct components or as a single equivalent, will be examined. In the double-component setup, the influence of the wedge configuration composing the jaw, and the influence of lubrication of the anchor, will be assessed.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.3
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• pp.28-39
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• 1994

We experimented on memory multichip modules to increase the packing density of memory devices and to improve their electrical characteristics. A 128K$\times$8bit SRAM module was made of four 32K$\times$8bit SRAM memory chips. The memory multichip module was constructed on a low-cost double sided PCB(printed circuit boared) substrate. In the process of fabricating a multichip module. we focused on the improvement of its electrical characteristics. volume, and weight by employing bare memory chips. The characteristics of the bare chip module was compared with that of the module with four packaged chips. We conducted circuit routing with a PCAD program, and found the followings: the routed area for the module with bare memory chips reduced to a quarter of that area for module with packaged memory chips. 1/8 in volume, 1/5 in weight. Signal transmission delay times calculated by using transmission line model was reduced from 0.8 nsec to 0.4 nsec only on the module board, but the coupling coefficinet was not changed. Thus, we realized that the electrical characteristics of multichip packages on PCB board be improved greatly when using bare memory chips.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.10 no.6
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• pp.2781-2800
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• 2016

Emerging attacks aim to access proprietary assets and steal data for business or political motives, such as Operation Aurora and Operation Shady RAT. Skilled Intruders would likely remove their traces on targeted hosts, but their network movements, which are continuously recorded by network devices, cannot be easily eliminated by themselves. However, without complete knowledge about both inbound/outbound and internal traffic, it is difficult for security team to unveil hidden traces of intruders. In this paper, we propose an autonomous anomaly detection system based on behavior profiling and relation mining. The single-hop access profiling model employ a novel linear grouping algorithm PSOLGA to create behavior profiles for each individual server application discovered automatically in historical flow analysis. Besides that, the double-hop access relation model utilizes in-memory graph to mine time-sequenced access relations between different server applications. Using the behavior profiles and relation rules, this approach is able to detect possible anomalies and violations in real-time detection. Finally, the experimental results demonstrate that the designed models are promising in terms of accuracy and computational efficiency.

• Transactions of the Korean Society of Automotive Engineers
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• v.3 no.3
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• pp.66-78
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• 1995

In this paper, we address vehicle modeling and dynamic analysis of four wheel steering systems (4WS). 4WS is one of the devices used for the improvement of vehicle maneuverability and stability. All research done here is based on a production vehicle from a manufacturer. To study actual system response, a three dimensional, full vehicle model was created. In past research of this type, simple, two dimensional, bicycle vehicle models were typically used. First, we modelled and performed a dynamic analysis on a conventional two wheel steering(2WS) vehicle. The modeling and analysis for this model and subsequent 4WS vehicles were performed using ADAMS(Automatic Dynamic Analysis of Mechanical Systems) software. After the original vehicle model was verified with actual experiment results, the rear steering mechanism for the 4WS vehicle was modelled and the rear suspension was changed to McPherson-type forming a four wheel independent suspension system. Three different 4WS systems were analyzed. The first system applied a mechanical linkage between the front and rear steering mechanisms. The second and third systems used, simple control logic based on the speed and yaw rate of the vehicle. 4WS vehicle proved dynamic results through double lane change test.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.10
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• pp.2305-2309
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• 2010

In this paper, the variations of threshold voltage characteristics for ratio of channel length and thickness have been alanyzed for DG(Double Gate)MOSFET having top gate and bottom gate. Since the DGMOSFET has two gates, it has advantages that contollability of gate for current is nearly twice and SCE(Short Channel Effects) shrinks in nano devices. The channel length and thickness in MOSFET determines device size and extensively influences on SCEs. The threshold voltage roll-off, one of the SCEs, is large with decreasing channel length. The threshold voltage roll-off and drain induced barrier lowing have been analyzed with various ratio of channel length and thickness for DGMOSFET in this study.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.10
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• pp.1822-1828
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• 2008

This paper presents design parameter calculation methodology and its realization to construction for the 10/350${\mu}s$ lightning impulse current generator(ICG) modelled as double exponential function waveform with characteristic parameters ${\alpha},{\beta}$. Matlab internal function, "fzero" was applied to find ${\lambda}={\alpha}/{\beta}$ which is solution of nonlinear equation linearly related with two wave parameter $T_1$ and $T_2$. The calculation results for 10/350${\mu}s$ lightning impulse current show very good accuracy with error less 0.03%. Two type of 10/350${\mu}s$ ICGs based on the calculated design circuit parameters were fabricated by considering the load variation. One is applicable to the MOV based Surge protective device(SPD) for less 15 kA and the other is to test small resistive devices such as spark gap arrester and bonding device with maximum current capability 30 kA. The tested waveforms show error within 10% in comparison with the designed estimation and the waveform tolerance recommended in the IEC 61643-1 and IEC 60060-1.

• Transactions of the Korean Society of Automotive Engineers
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• v.5 no.1
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• pp.216-216
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• 1997

We developed the durability estimation and design systems to minimize the volume, considering the durability, efficiency, and design requirements of worm gears. That is, we consider each kind of factors affecting on durability on the basis of AGMA Standard for the cylindrical and double-enveloping worm gears. We also estimate input power on the basis of wear and durability, bending strength and deflection of worm shaft, and we developed the durability estimation and design systems of power transmission worm gears introducing the optimal design method on the personal computer to be easily used in field. Also, we developed a method which converts the design variables obtained from the optimal design method to integer values(number of worm threads, number of worm threads, number of worm wheel teeth, etc.,) to be used in real design and production. The developed durability estimation and design method can be easily applied to the design of worm gears used as power transmission devices in machineries and is expected to be used for weight minimization of worm gear unit.