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http://dx.doi.org/10.5573/ieek.2013.50.7.102

Dependence of Ferroelectric Film Formation Method on Electrical Characteristics in Solution-processed Ferroelectric Field Effect Transistor  

Kim, Woo Young (Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology)
Bae, Jin-Hyuk (School of Electronics Engineering, Kyungpook National University)
Publication Information
Journal of the Institute of Electronics and Information Engineers / v.50, no.7, 2013 , pp. 102-108 More about this Journal
Abstract
In manufacturing of solution-processed organic electronic devices, a spin coating method is frequently used, but which has a big problem. Solvent in a solution has a decisive effect such as physical and chemical damage for successive solution-based film deposition. Such a severe damage by solvent restricts for fabricating building blocks of multi-layered films from solutions. In this work, it will be shown that a proper combination of well-known solvents gives a chance to fabricate multi-layered film, also this new method was applied to make organic field effect transistor. Two types of bottom gate, bottom contact transistors were fabricated, one of which is fabricated by conventional single spin coating method, the other fabricated by double spin coating method. Compared with the electrical characteristics in a single spin coated transistor, the leakage current between source and gate electrode was decreased, ON state current was increased, and the extracted saturation mobility was multiplied more than 2.7 time for double spin coated transistors. It is suggested that the multiple coated gate dielectric structure is more desirable for high performance organic ferroelectric field effect transistors.
Keywords
ferroelectric; field effect transistor; double spin coating; electrical characteristics;
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