• Title/Summary/Keyword: Dots in a well

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Role of span length in the adaptation of implant-supported cobalt chromium frameworks fabricated by three techniques

  • Zhou, Ying;Li, Yong;Ma, Xiao;Huang, Yiqing;Wang, Jiawei
    • The Journal of Advanced Prosthodontics
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    • 제9권2호
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    • pp.124-129
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    • 2017
  • PURPOSE. This study evaluated the effect of span length on the adaptation of implant-supported cobalt chromium frameworks fabricated by three techniques. MATERIALS AND METHODS. Models with two solid abutment analogs at different inter-abutment distances were digitized using a laboratory scanner. Frameworks of two-, three-, and four-unit fixed prostheses were designed by a computer. Six dots with a diameter of 0.2 mm were preset on the surface of each framework. A total of 54 implant-supported cobalt chromium frameworks were fabricated by milling, selective laser melting (SLM), and cast techniques. The frameworks were scanned and exported as Stereolithography files. Distances between two dots in X, Y, and Z coordinates were measured in both the designed and fabricated frameworks. Marginal gaps between the framework and the abutments were also evaluated by impression replica method. RESULTS. In terms of distance measurement, significant differences were found between three- and four-unit frameworks, as well as between two- and four-unit frameworks prepared by milling technique (P<.05). Significant differences were also noted between two- and three-unit frameworks, as well as between two- and four-unit frameworks prepared by cast technique (P<.05). The milling technique presented smaller differences than the SLM technique, and the SLM technique showed smaller differences than the cast technique at any unit prostheses (P<.05). Evaluation with the impression replica method indicated significant differences among the span lengths for any fabrication method (P<.05), as well as among the fabrication methods at any unit prostheses (P<.05). CONCLUSION. The adaptation of implant-supported cobalt chromium frameworks was affected by the span length and fabrication method.

Eco-Friendly Emissive ZnO-Graphene QD for Bluish-White Light-Emitting Diodes

  • Kim, Hong Hee;Son, Dong Ick;Hwang, Do-Kyeong;Choi, Won Kook
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.627-627
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    • 2013
  • Recently, most studies concerning inorganic CdSe/ZnS quantum dot (QD)-polymer hybrid LEDs have been concentrated on the structure with multiple layers [1,2]. The QD LEDs used almost CdSe materials for color reproduction such as blue, green and red from the light source until current. However, since Cd is one of six substances banned by the Restriction on Hazardous Substances (RoHS) directive and classified into a hazardous substance for utilization and commercialization as well as for use in life, it was reported that the use of CdSe is not suitable to fabricate a photoelectronic device. In this work, we demonstrate a novel, simple and facile technique for the synthesis of ZnO-graphene quasi-core.shell quantum dots utilizing graphene nanodot in order to overcome Cd material including RoHS materials. Also, We investigate the optical and structural properties of the quantum dots using a number of techniques. In result, At the applied bias 10 V, the device produced bluish-white color of the maximum brightness 1118 cd/$m^2$ with CIE coordinates (0.31, 0.26) at the bias 10 V.

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Non-blinking dendritic crystals from C-dot solution

  • Mewada, Ashmi;Vishwakarma, Ritesh;Patil, Bhushan;Phadke, Chinmay;Kalita, Golap;Sharon, Maheshwar;Sharon, Madhuri
    • Carbon letters
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    • 제16권3호
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    • pp.211-214
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    • 2015
  • Bio-imaging and drug carriers for delivery have created a huge demand for crystals. Crystals are fascinating materials that have been grown for a long time but obtaining biocompatible fluorescent crystals is a challenging task. We report on the growth of fluorescent crystals using a carbon dot (C-dot) solution by a hydrothermal process. The crystallization pattern of these C-dots exhibited a unique dendritic structure having a feather-like morphology. The growth temperature and pressure were maintained at 60℃ and 200 mmHg, respectively, for crystal growth. A green fluorescence (under UV light) that was observed in the C-dot solution was retained in the crystals formed from the solution. Cytotoxicity studies on Vero cells revealed the crystals to be extremely biocompatible. These fluorescent crystals are extremely well suited for biomedical and optoelectronic applications.

디지털 입자 홀로그래피의 입자 초점면 결정에 관한 실험적 검증 (Validation Experiments for the Determination of Particle Focal Positions in Digital Particle Holography)

  • 양얀;강보선
    • 대한기계학회논문집B
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    • 제32권10호
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    • pp.784-790
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    • 2008
  • The feasibility and the accuracy of the correlation coefficient(CC) method for the determination of particle positions along the optical axis in digital particle holography were verified by alidation experiments. A traverse system with capable of high precision was used to move the particle objects by exact known distances between several different positions. The particle positions along the optical axis were calculated by the CC method and compared with their exact values to obtain the errors of the focal plane determination. The tested particles were 2D dots in a calibration target along with different sized glass beads and droplets that reflected and caused a three-dimensional effect. The results show that the CC method can work well for both the 2D dots and the 3D particles. The effect of other particles on the focal plane determination was also investigated. The CC method can locate the focal plane of particles with a high precision, regardless of the existence of other particles.

Growth features and nucleation mechanism of Ga1-x-yInxAlyN material system on GaN substrate

  • Simonyan, Arpine K.;Gambaryan, Karen M.;Aroutiounian, Vladimir M.
    • Advances in nano research
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    • 제5권4호
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    • pp.303-311
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    • 2017
  • The continuum elasticity model is applied to investigate quantitatively the growth features and nucleation mechanism of quantum dots, nanopits, and joint QDs-nanopits structures in GaInAlN quasyternary systems. We have shown that for GaInAlN material system at the critical strain of ${\varepsilon}^*=0.039$ the sign of critical energy and volume is changed. We assume that at ${\varepsilon}={\varepsilon}^*$ the mechanism of the nucleation is changed from the growth of quantum dots to the nucleation of nanopits. Obviously, at small misfit (${\varepsilon}$ < ${\varepsilon}^*$), the bulk nucleation mechanism dominates. However, at ${\varepsilon}$ > ${\varepsilon}^*$, when the energy barrier becomes negative as well as a larger misfit provides a low-barrier path for the formation of dislocations, the nucleation of pits becomes energetically preferable. The free energy of mixing for $Ga_{1-x-y}In_xAl_yN$ quasiternary system was calculated and studied and its 3D sketch was plotted.

Newly Synthesized Silicon Quantum Dot-Polystyrene Nanocomposite Having Thermally Robust Positive Charge Trapping

  • Dung, Mai Xuan;Choi, Jin-Kyu;Jeong, Hyun-Dam
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.221-221
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    • 2013
  • Striving to replace the well known silicon nanocrystals embedded in oxides with solution-processable charge-trapping materials has been debated because of large scale and cost effective demands. Herein, a silicon quantum dot-polystyrene nanocomposite (SiQD-PS NC) was synthesized by postfunctionalization of hydrogen-terminated silicon quantum dots (H-SiQDs) with styrene using a thermally induced surface-initiated polymerization approach. The NC contains two miscible components: PS and SiQD@PS, which respectively are polystyrene and polystyrene chains-capped SiQDs. Spin-coated films of the nanocomposite on various substrate were thermally annealed at different temperatures and subsequently used to construct metal-insulator-semiconductor (MIS) devices and thin film field effect transistors (TFTs) having a structure p-$S^{++}$/$SiO_2$/NC/pentacene/Au source-drain. C-V curves obtained from the MIS devices exhibit a well-defined counterclockwise hysteresis with negative fat band shifts, which was stable over a wide range of curing temperature ($50{\sim}250^{\circ}C$. The positive charge trapping capability of the NC originates from the spherical potential well structure of the SiQD@PS component while the strong chemical bonding between SiQDs and polystyrene chains accounts for the thermal stability of the charge trapping property. The transfer curve of the transistor was controllably shifted to the negative direction by chaining applied gate voltage. Thereby, this newly synthesized and solution processable SiQD-PS nanocomposite is applicable as charge trapping materials for TFT based memory devices.

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하부 거울층을 이용한 AIGaAs/GaAs 완전 공핍 광 싸이리스터 특성 분석 (Analysis of AIGaAs/GaAs Depleted Optical Thyristor using bottom mirror)

  • 최운경;김두근;최영완
    • 대한전자공학회논문지SD
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    • 제42권1호
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    • pp.39-46
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    • 2005
  • 본 연구에서는 광논리 및 광접속에 응용할 수 있는 GaAs/AIGaAs 구조의 완전 공핍 광 싸이리스터(depleted optical thyristor, DOT)에 1/4 파장 거울층 (quarter wavelength reflector stacks, QWRS)을 제작하여 특성을 측정 분석하였다. 바닥면에 위치한 QWRS는 광 방출 효율뿐만 아니라 흡수 효율을 증가시킨다. 바닥면에 QWRS를 넣은 것과 그렇지 않은 두가지의 DOT를 제작하여 비선형 S-자 형의 전류-전압 특성, 광 방출 효율 및 흡수 효율을 측정, 분석하였다. 하부 거울층을 삽입한 DOT와 기존의 DOT의 스위칭 변화는 각각 1.82 V와 1.52 V로 흡수효율에서 20 % 증가함을 보인다. 뿐만 아니라, 하부 거울층을 이용한 DOT는 기존의 소자에 비하여 발광 효율 면에서 최고 46 % 향상된 결과를 나타낸다. 스위칭 특성을 분석하기 위하여 순방향 전압에서 비선형 s-자형의 전류-전압 특성을, 역방향 전압에서 완전 공핍 전압을 모의실험을 통하여 알아보았다. 모의실험 방법으로 유한 차분 방법 (finite difference method, FDM)을 이용하여 최적화된 DOT 각 층의 두께와 도핑 농도를 구하였다.

나노구조를 응용한 AlN 성장 방법 및 특성 (High Quality AlN Layer Regrown on AlN Nanostructure by Hydride Vapor Phase Epitaxy)

  • 손호기;김진원;임태영;이미재;김진호;전대우;황종희;오해곤;최영준;이혜용
    • 한국전기전자재료학회논문지
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    • 제28권11호
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    • pp.711-714
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    • 2015
  • In this paper, high quality AlN layers were regrown on AlN nanopillar structure with $SiO_2$-dots by HVPE. Surface morphology of AlN layer regrown exhibited flatter than a conventional AlN template. The laterally overgrown AlN regions would consist of a continuous well coalesced layer with lower dislocation density than in the template because of the dislocation blocking and dislocation bending effects. Moreover, result of Raman spectroscopy suggest that the AlN nanopillar structure with $SiO_2$-dots relieves the strain in the AlN layer regrown by HVPE.

Synthesis of DOT Use of Beam End Protection for Extending the Life of Bridges

  • Radlinska, Aleksandra;McCarthy, Leslie Myers;Matzke, James;Nagel, Francis
    • International Journal of Concrete Structures and Materials
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    • 제8권3호
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    • pp.185-199
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    • 2014
  • As the national transportation infrastructure ages and deteriorates, many existing bridges require frequent and costly maintenance and repairs. The objective of this work was to synthesize new and existing types of beam end coatings and treatments that have been proven to extend the life of new and existing concrete and steel bridge beams. A comprehensive literature review, along with online surveys and phone interviews of State department of transportations (DOTs) and coating manufacturers was conducted to gather information about existing and recently developed technologies. The study revealed that while many promising coatings and treatments are offered on the market, there is a lack of readily available laboratory results that would enable direct comparison of the available methods. This finding applies in terms of the coatings' durability and the potential for extending the service life of existing bridges. Most of the interviewed State DOTs' personnel assessed the products listed in respective DOT's Qualified Products Lists as performing 'well'. However, there was significant variability between states in the type of the products used. Among the agencies contacted, none was able to suggest the most promising or advanced products, either for concrete or steel bridge beam end treatments. This suggests that comprehensive laboratory evaluation would be necessary for selecting the best available beam end treatments and coatings.