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http://dx.doi.org/10.4313/JKEM.2015.28.11.711

High Quality AlN Layer Regrown on AlN Nanostructure by Hydride Vapor Phase Epitaxy  

Son, Hoki (Korea Institute of Ceramic Engineering & Technology)
Gim, Jinwon (Korea Institute of Ceramic Engineering & Technology)
Lim, Tea-Young (Korea Institute of Ceramic Engineering & Technology)
Lee, Mijai (Korea Institute of Ceramic Engineering & Technology)
Kim, Jin-Ho (Korea Institute of Ceramic Engineering & Technology)
Jeon, Dae-Woo (Korea Institute of Ceramic Engineering & Technology)
Hwang, Jonghee (Korea Institute of Ceramic Engineering & Technology)
Oh, Hae-Kon (LumiGNtech Co.)
Choi, YoungJun (LumiGNtech Co.)
Lee, Hae-Yong (LumiGNtech Co.)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.28, no.11, 2015 , pp. 711-714 More about this Journal
Abstract
In this paper, high quality AlN layers were regrown on AlN nanopillar structure with $SiO_2$-dots by HVPE. Surface morphology of AlN layer regrown exhibited flatter than a conventional AlN template. The laterally overgrown AlN regions would consist of a continuous well coalesced layer with lower dislocation density than in the template because of the dislocation blocking and dislocation bending effects. Moreover, result of Raman spectroscopy suggest that the AlN nanopillar structure with $SiO_2$-dots relieves the strain in the AlN layer regrown by HVPE.
Keywords
AlN; Nano structure; HVPE; Refractive index;
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