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Analysis of AIGaAs/GaAs Depleted Optical Thyristor using bottom mirror  

Choi Woon-Kyiug (Lab. of Optoelectronics and Optical Communications, Chung-Ang University)
Kim Doo-Gun (Lab. of Optoelectronics and Optical Communications, Chung-Ang University)
Choi Young-Wan (Lab. of Optoelectronics and Optical Communications, Chung-Ang University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.42, no.1, 2005 , pp. 39-46 More about this Journal
Abstract
We fabricate and analyze fully depleted optical thyristors (DOTs) using quarter wavelength reflector stacks (QWRS). QWRS are employed as bottom mirrors to enhance the emission efficiency as well as the optical sensitivity. In order to analyze their switching characteristics, S-shape nonlinear current-voltage curves are simulated and the reverse full-depletion voltages (Vneg's) of DOTs are obtained as function of semiconductor parameters by using a finite difference method (FDM). The fabricated DOTs show sufficient nonlinear s-shape I-V characteristics and switching voltage changes of these devices with and without bottom mirrors show 1.82 V and 1.52 V, respectively. Compared to a conventional DOT, this device with the bottom mirrors shows about 20％ and 46% enhancement in switching voltage change and spontaneous emission efficiency, respectively.
Keywords
quarter wavelength reflector stacks(QWRS); DOT; FDM;
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