• Journal of Mechanical Science and Technology
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• v.20 no.1
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• pp.1-12
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• 2006

This work reviews the effects of catalyst formulation and exhaust gas composition on soot oxidation in CDPF (Catalytic Diesel Particulate Filter). DOC's (Diesel Oxidation Catalysts) have been loaded with Pt catalyst (Pt/$Al_{2}O_3$) for reduction of HC and CO. Recent CDPF's are coated with the Pt catalyst as well as additives like Mo, V, Ce, Co, Fe, La, Au, or Zr for the promotion of soot oxidation. Alkali (K, Na, Cs, Li) doping of metal catalyst tends to increase the activity of the catalysts in soot combustion. Effects of coexistence components are very important in the catalytic reaction of the soot. The soot oxidation rate of a few catalysts are improved by water vapor and NOx in the ambient. There are only a few reports available on the mechanism of the PM (particulate matter) oxidation on the catalysts. The mechanism of PM oxidation in the catalytic systems that meet new emission regulations of diesel engines has yet to be investigated. Future research will focus on catalysts that can not only oxidize PM at low temperature, but also reduce NOx, continuously self-cleaning diesel particulate filters, and selective catalysts for NOx reduction.

• Journal of information and communication convergence engineering
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• v.16 no.1
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• pp.43-47
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• 2018

The existing modeling of avalanche dominated breakdown in double gate MOSFETs (DGMOSFETs) is not relevant for 10 nm gate lengths, because the avalanche mechanism does not occur when the channel length approaches the carrier scattering length. This paper focuses on the punch through mechanism to analyze the breakdown characteristics in 10 nm DGMOSFETs. The analysis is based on an analytical model for the thermionic-emission and tunneling currents, which is based on two-dimensional distributions of the electric potential, obtained from the Poisson equation, and the Wentzel-Kramers-Brillouin (WKB) approximation for the tunneling probability. The analysis shows that corresponding flat-band-voltage for fixed threshold voltage has a significant impact on the breakdown voltage. To investigate ambiguousness of number of dopants in channel, we compared breakdown voltages of high doping and undoped DGMOSFET and show undoped DGMOSFET is more realistic due to simple flat-band-voltage shift. Given that the flat-band-voltage is a process dependent parameter, the new model can be used to quantify the impact of process-parameter fluctuations on the breakdown voltage.

• Bulletin of the Korean Chemical Society
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• v.13 no.2
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• pp.127-131
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• 1992

Changes in network structures of ${\alpha}-Nb_2O_5$ in the X MgO+(1-X) ${\alpha}-Nb_2O_5$ solid solutions occurring as the MgO doping level (X) was varied were investigated by means of infrared spectroscopy and X-ray analysis. X-ray diffraction revealed that all the synthesized specimens have the monoclinic structure. The FT-IR spectroscopy showed that the system investigated forms the solid solutions in which $Mg^{2+}$ ions occupy the octahedral sites in parent crystal lattice. Electrical conductivities were measured as a function of temperature from 600 to $1050{\circ}$ and $P_{O2}$ form $1{\times}10^{-5}$ to $2{\times}10^{-1}$ atm. The defect structure and conduction mechanism were deduced from the results. The $1}n$ value in ${\alpha}{\propto}{P_{O2}^{1}n}}$ is found to be -1/4 with single possible defect model. From the activation energy ($E{\alpha}$ = 1.67-1.73 eV) and the1/n value, electronic conduction mechanism is suggested with a doubly charged oxygen vacancy.

• Bulletin of the Korean Chemical Society
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• v.8 no.5
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• pp.389-393
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• 1987

The oxidation of carbon monoxide by gaseous oxygen on 0.53, 1.02, and 1.51 mol $\%$CoO-doped $-Fe_2O_3$ catalysts has been investigated in the temperature range from 340 to 480$^{\circ}C$ under various CO and $O_2$ partial pressures. The oxidation rates have been correlated with 1.5-order kinetics; the 0.5-order with respect to $O_2$ and the first-order with respect to CO. In the above temperature range, the activation energy is 0.34 $\pm$ 0.01 eV${\cdot}$$mol^{-1}$. The electrical conductivity of 0.53, 1.02, and 1.51 mol %CoO-doped $\alpha$-$Fe_2O_3$ has been measured at 350$^{\circ}C$ under various $P_{CO}and $P_{O_2}$. From the conductivity data it was found that $O_2$ was adsorbed on Vo formed by doping with CoO, while CO appeared essentially to be chemisorbed on the lattice oxygen of the catalyst surface. The proposed oxidation mechanism and the dominant defect were supported by the agreement between the kinetic data and conductivities.

• Proceedings of the Korean Society of Applied Pharmacology
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• 1996.04a
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• pp.215-215
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• 1996

The present study examined chronic effects of transient focal cerebral ischemia on the substantia nigra, a remote exofocal area, using immunohistochenmical and receptor autoradiographic techniques. Transient focal cerebral ischemia was induced by middle cerebral artery (MCA) occlusion for 60 or 90 min followed by reperfusion using silicone-coated 4-0 nylon monofilament in male Wistar rats. After 1- or 2-week reperfusion following transient MCA occlusion, there were partial losses of tyrosine hydroxylase-immunoreactive dopaminergic neurons, incieases in glial fibrillary acidic protein-immunoreactive cells (gliosis), decreases in [$^3$H]YM-09151-2 binding for dopamine D$_2$ receptors, and marked atrophy in the ipsilateral substantia nigra. The precise mechanism(s) of exofocal damage to the substantia nigra is remained to be elucidated.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.6
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• pp.1157-1165
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• 2009

In AC-PDP, it is necessary to achieve high luminance efficiency, high luminance and high definition by adopting technologies such as high xenon concentration, MgO doping, and long gap. However, it is very difficult to apply above technologies because they make the driving voltage margin reduced. Especially, high Xe concentration technology for high efficacy makes not only the driving voltage margin reduced but also the stability of reset discharge decreased at low temperature. In this paper, we studied temperature and voltage dependent stability of reset discharge and present the experimental results of the discharge characteristics at low temperature. In addition, we suggested the mechanism of bright noise and black noise at low temperature. Finally, we proposed double reset waveform to improve the bright noise and descending scan time method to improve the black noise.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.11
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• pp.37-47
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• 1997

Utilizing 2-dimensional device simulations incorporating lattic eheating models, we analyzed in detail the DC breakdown characterisics of NMOS trasistors with different structures, which are commonly used as ESD protection transistors. The mechanism leading to device failure resulting from electrostatic discharge was explained by analyzing the 1st and 2nd breakdown characteristics of LDD devices. Also a criteria for more robust designs of NMOS transistor structures against ESD was suggested by examining the characteristics changes with changes in structural parameters such as the LDD doping concentration, the drain junction depth, the distance between source/drain contacts, and the source junction area.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.187-189
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• 1994

The degree of the photodoping process in Ag(100 )/a-$Se_{75}Ge_{25}$(2000 ) films has been measured as a funcition of photon energy between 1.5eV and 2.9eV with the exposing time. The window of Ag occurs at 3400 (3.65eV) and Ag is almost transparent in this region. It was shown that transmitance is always constant (40∼50%) for the wavelength ranges of our experiment. It was found that the energy gap of a unexposed a-$Se_{75}Ge_{25}$ film is 1.81eV. Ag photodoping process result in the photodarkenting effect which the absorption edge shift to the large wavelength. Especially, we could obtain very large band shut ( ∼0.3eV) resulting in exposing He-Ne laser(6328[ ]). From the result of our experimental, we suggest that Ag photodoping process depends on the photon absorption in Ag.

• Analytical Science and Technology
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• v.8 no.4
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• pp.631-636
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• 1995

Electrochemical properties of self-dopable poly(aniline N-butylsulfonate)s in various acidic medium were investigated by spectroelectrochemical techniques. Cyclic voltammetric study showed more than two reversible process of one electron transfer, the potential and peak intensity of which were dependent on the acid concentration and dopant ion. Spectroscopic study at different oxidation level indicated that the electrochromic switching of the poly(aniline N-alkylsulfonate)s film involves structural changes from benzenoid ring to quinoid ring. Spectrocyclic voltammetry together with impedance spectra of the PANBUS film in 0.1 M $LiClO_4$ solution of acetonitrile containing 0.46 M of perchloric acid showed two types of highly conductive states at the intermediate oxidation levels, which can be related to the metallic polaron states doped by two different process.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.10
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• pp.489-493
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• 2001

The on-current of offset and LDD structured devices in slightly decreased while the off-current are remarkably reduced and almost constant independent of gate and drain voltage because offset and LDD regions behave as a series resistance and reduce the lateral electric field in the drain depletion. Degradation of these devices is dependent upon the offset and LDD length rather than doping concentration in these regions. Also, degradation mechanism has been related to the interface generation rather than the hot carrier injection into gate oxide.