Ag/a-$Se_{75}Ge_{25}$ 박막의 Ag Doping Mechanism 해석[ll]-Ag 도핑의 광에너지 의존성

  • 김민수 (광운대학교 공과대학 전자재료공학과) ;
  • 이현용 (광운대학교 공과대학 전자재료공학과) ;
  • 정홍배 (광운대학교 공과대학 전자재료공학과) ;
  • 이영종 (여주전문대학교 전자과)
  • Published : 1994.11.01

Abstract

The degree of the photodoping process in Ag(100 )/a-$Se_{75}Ge_{25}$(2000 ) films has been measured as a funcition of photon energy between 1.5eV and 2.9eV with the exposing time. The window of Ag occurs at 3400 (3.65eV) and Ag is almost transparent in this region. It was shown that transmitance is always constant (40∼50%) for the wavelength ranges of our experiment. It was found that the energy gap of a unexposed a-$Se_{75}Ge_{25}$ film is 1.81eV. Ag photodoping process result in the photodarkenting effect which the absorption edge shift to the large wavelength. Especially, we could obtain very large band shut ( ∼0.3eV) resulting in exposing He-Ne laser(6328[ ]). From the result of our experimental, we suggest that Ag photodoping process depends on the photon absorption in Ag.

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