• Korean Journal of Materials Research
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• v.9 no.5
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• pp.460-466
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• 1999

The deep level electron traps in AP-MOCVD GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures have been investigated by means of Deep Level Transient Spectroscopy DLTS). In terms of the experimental procedure, GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures were deposited on 2" undoped semi-insulating GaAs wafers by the AP-MOCVD method at $650^{\circ}C$ with TMGa, AsH3, TMAl, and SiH4 gases. The n-type GaAs conduction layers were doped with Si to the target concentration of about 2$\times$10\ulcornercm\ulcorner. The Al content was targeted to x=0.5 and the thicknesses of Al\ulcornerGa\ulcornerAs layers were targeted from 0 to 40 nm. In order to investigate the electrical characteristics, an array of Schottky diodes was built on the heterostructures by the lift-off process and Al thermal evaporation. Among the key results of this experiment, the deep level electron traps at 0.742~0.777 eV and 0.359~0.680 eV were observed in the heterostructures; however, only a 0.787 eV level was detected in n-type GaAs samples without the Al\ulcornerGa\ulcornerAs overlayer. It may be concluded that the 0.787 eV level is an EL2 level and that the 0.742~0.777 eV levels are related to EL2 and residual oxygen impurities which are usually found in MOCVD GaAs and Al\ulcornerGa\ulcornerAs materials grown at $630~660^{\circ}C$. The 0.359~0.680 eV levels may be due to the defects related with the al-O complex and residual Si impurities which are also usually known to exist in the MOCVD materials. Particularly, as the Si doping concentration in the n-type GaAs layer increased, the electron trap concentrations in the heterostructure materials and the magnitude of the C-V hysteresis in the Schottky diodes also increased, indicating that all are intimately related.ated.

• Journal of the Korean Society of Radiology
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• v.9 no.2
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• pp.67-72
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• 2015

In diagnostic radiology, the use of automatic exposure control device is internationally recommended for diagnosis and optimization. However, if exposed to prolonged radiation is a complicated manufacturing process, there is a problem that occurs decrease of various performance overall brightness sensor, which is commercially available conventional. Therefore, in this study, absorption of X-ray is high, and I want to evaluate the AEC applicability of the sensor of the photoconductor-based production has an easy advantage. Experimental results confirms the possibility of fabrication of the sensor through an increase in the SNR, with the detection efficiency superior, accurate turn-off. In addition, it is confirmed that the experimental results of the transmittance and the latent image, Ghost effect by the light conductor does not appear, in the case of a photoconductor with the exception of the PbO, 80% - and it was confirmed good transmittance of 90%. Therefore, excellent mechanical stability and poor performance due to a change of the doping concentration than the existing products that have been put to practical use, the sensor easy photoconductor based, fabrication and can be applied as AEC sensor is expected.

• Applied Chemistry for Engineering
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• v.21 no.5
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• pp.495-499
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• 2010

To develop chemical and biosensors, this paper studies sensing characteristics of bulk carbon nanotube (CNT) electrodes by means of their electrical impedance properties due to their large surface area and excellence chemical absorptivity. The sensors were fabricated in the form of film and nano web style by using composite process for mass production. The bulk composite electrodes were fabricated with singlewall and multi-wall carbon nanotubes based on host polymers such as Nafion and PAN, using a solution-casting and an electrospinning technique. The resistance and the capacitance of electrodes were measured with LCR meter under the various amounts of buffer solution to study the electrical impedance change properties of them. On the experimental of sensor electrode, impedance characteristics of the composite electrode are affected by its host polymer and nanofiller and its sensing response showed saturated result after applying some amounts of buffer solution for test chemical. Especially, the capacitance values showed drastic changes while the resistance values only changed within few percent range. It is deduced that the ions in the solution penetrated and diffused into the electrodes surface changed the electrical properties of the electrodes much like a doping effect.

• Polymer(Korea)
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• v.33 no.3
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• pp.191-197
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• 2009

We have investigated the effect of strong p-type organic semiconductor $F_4$-TCNQ-doped CuPc hole transport layer on the performance of p-i-n type bulk heterojunction photovoltaic device with ITO/PEDOT:PSS/CuPc: $F_4$-TCNQ(5 wt%)/CuPc:C60(blending ratio l:l)/C60/BCP/LiF/Al, architecture fabricated via vacuum deposition process, and have evaluated the J-V characteristics, short-circuit current ($J_{sc}$), open-circuit voltage($V_{oc}$), fill factor(FF), and power conversion efficiency(${\eta}_e$) of the device. By doping $F_4$-TCNQ into CuPc hole transport layer, increased absorption intensity in absorption spectra, uniform dispersion of organic molecules in the layer, surface uniformity of the layer, and enhanced injection currents improved the current photovoltaic device with power conversion efficiency(${\eta}_e$) of 0.16%, which is still low value compared to silicone solar cell indicating that many efforts should be made to improve organic photovoltaic devices.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.1
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• pp.25-29
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• 2010

Thulium oxide-doped barium titanate ceramics for MLCCs with perovskite structure were prepared by a sintering process at $1320^{\circ}C$ for 2 h in a reduced atmosphere. The effect of $Tm_2O_3$ addition on dielectric property of barium titanate ceramics has been studied in terms of their microstructures. Moreover, the phase identification of the dielectric specimens was conducted to define the secondary phase (pyrochlore). The specimen doped with 1 mol% $Tm_2O_3$ exhibited the highest dielectric constant. However, the dielectric constants of specimens with more than 2 mol% $Tm_2O_3$ to $BaTiO_3$ were the lower values than that of 1 mol% doped one. The grain size and the formation of pyrochlore phase associated with the dielectric properties were examined through morphology development and the structural analysis. Furthermore, these data were compared with the property of the dielectric material doped with $Er_2O_3$. It could be concluded that the dielectric property of ceramic capacitors were attributed to the change of pyrochlore phase and the tetragonality of $BaTiO_3$ with doping.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.52-52
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• 2008

The positive temperature coefficient of resistivity (PTCR) effect in (1-x)$BaTiO_3$ - $x(Bi_{0.5}K_{0.5})TiO_3$ doped with $Nb_2O_5$ was investigated. $(Bi_{1/2}K_{1/2})TiO_3$ (BKT) is more environment-friendly than $PbTiO_3$ in order to use in PTC thermistors. The incorporation of 1 mol% BKT to $BaTiO_3$ increased the Curie temperature (Tc) to $148^{\circ}C$. Doping of $Nb_2O_5$ to $Ba_{0.99}(Bi_{0.5}K_{0.5})_{0.01}TiO_3$ (BaBKT) ceramic has enhanced its PTCR effects. For the sample containing 0.025 mol% $Nb_2O_5$, it showed good PTCR properties; low resistivity at room temperature (${\rho}_r$) of 30 $\Omega{\cdot}cm$, a high PTCR intensity of approximately $3.3\times10^3$, implying the ratio of maximum resistivity to minimum resistivity (${\rho}_{max}/{\rho}_{min}$) in the measured temperature range, and a large resistivity temperature factor (a) of 13.7%/$^{\circ}C$ along with a high Curie temperature (Tc) of $167^{\circ}C$. In addition, the cooling rate of the samples during the sintering process had an influence on their PTCR behavior. All the samples showed the best ${\rho}_{max}/{\rho}_{min}$ ratio when they have cooled down at a rate of $600^{\circ}C$/min.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.723-727
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• 2011

0.935Ba$TiO_3$-0.065($Bi_{0.5}Na_{0.5}$)$TiO_3+xmol%MnO_2$ (BBNTM-x) ceramics with $0{\leq}x{\leq}0.05$ were fabricated with muffled sintering by a modified synthesis process. Their microstructure and enhanced positive temperature coefficient of resistivity (PTCR) characteristics were systematically investigated in order to obtain lead-free high TC PTCR thermistors. All specimens showed a perovskite structure with a tetragonal symmetry and no secondary phase was observed. Grain growth was achieved when the doped MnO2 was increased above 0.02 mol%. This is due to the effect of positive Mn ion doping as an acceptor compensating a Ba vacancy occurred by the higher donor dopant concentration of $Bi^{3+}$ ion. Especially, enhanced PTCR characteristics of the extremely low ${\rho}_{RT}$ of $9\;{\Omega}{\cdot}cm$, PTCR jump of $5.1{\times}10^3$, ${\alpha}$ of 15.5%/$^{\circ}C$ and high $T_C$ of $167^{\circ}C$ were achieved for the BBNTM-0.04 ceramics.

• Journal of IKEEE
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• v.23 no.1
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• pp.193-199
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• 2019

In this study, we have proposed a floating metal guard ring structure based on TCAD simulation in order to enhance the breakdown voltage characteristics of gallium oxide ($Ga_2O_3$) vertical high voltage switching Schottky barrier diode. Unlike conventional guard ring structures, the floating metal guard rings do not require an ion implantation process. The locally enhanced high electric field at the anode corner was successfully suppressed by the metal guard rings, resulting in breakdown voltage enhancement. The number of guard rings and their width and spacing were varied for structural optimization during which the current-voltage characteristics and internal electric field and potential distributions were carefully investigated. For an n-type drift layer with a doping concentration of $5{\times}10^{16}cm^{-3}$ and a thickness of $5{\mu}m$, the optimum guard ring structure had 5 guard rings with an individual ring width of $1.5{\mu}m$ and a spacing of $0.2{\mu}m$ between rings. The breakdown voltage was increased from 940 V to 2000 V without degradation of on-resistance by employing the optimum guard ring structure. The proposed floating metal guard ring structure can improve the device performance without requiring an additional fabrication step.

• Nuclear Engineering and Technology
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• v.54 no.1
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• pp.318-325
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• 2022

In this study, composites containing undoped and barium-doped Bi₂WO₆:Ba²⁺were investigated for their shielding against diagnostic X-ray. At first, Bi₂WO₆ and barium-doped Bi₂WO₆ were synthesized with different weight percentages of barium oxide through a hydrothermal process. The as-synthesized nanostructures were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS) and Raman spectroscopy (RS). After that, some shields were generated with undoped and barium-doped Bi₂WO₆:Ba²⁺ nanostructure particles incorporated into polyvinyl chloride (PVC) polymer with different thicknesses and 15% weight of the nanostructure. Finally, the prepared samples were exposed to an X-ray tube at 40, 80, and 120 kV voltages, 10 mAs and, 44.5 cm SID (i.e. the distance from the X-ray beam source to the specimen). Linear and mass attenuation coefficients were also calculated for different samples. The results indicated that, among the samples, the one with 7.5 mmol barium-doped Bi₂WO₆ had the most attenuation at the voltage of 40kV, and the attenuation coefficients would increase with an increase in the amount of barium. The samples with 15 and 17.5 mmol barium-doped Bi₂WO₆ had higher attenuation than the others at 80 and 120 kV. Moreover, the half-value layer (HVL), tenth-value layer (TVL) and 0.25 mm lead equivalent thickness were calculated for all the samples. The lowest HVL value was for the sample with 7.5 mmol barium-doped Bi₂WO₆. As the result clearly show, an increment in the barium-doping content leads to a decrease in both HVL and TVL. In every three voltages, 0.25 mm lead equivalent thickness of the barium-doped composites (7.5 mmol and 15 mmol) had less than the other composites. The lowest value of 0.25 mm lead equivalent thickness was 7.5 barium-doped in 40 kV voltage and 15 mmol barium-doped in 80 kV and 120 kV voltages. These results were obtained only for 15% weight of the nanostructure.

• Journal of the Korean Electrochemical Society
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• v.24 no.4
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• pp.77-92
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• 2021

The energy density of lithium-ion batteries (LIBs) determines the mileage of electric vehicles. For increasing the energy density of LIBs, it is necessary to develop high-capacity active materials that can store more lithium ions within constrained weight. The rapid progress made in cathode technology has realized the utilization of the near-theoretical capacity of cathode materials. In contrast, commercial LIBs have still exploited graphite as active material in anodes since the 1990s. The most promising way to increase anodes' capacity is to mix high-capacity and long-cycle-life silicon oxides (SiOx) with graphite. However, the low initial Coulombic efficiency (ICE) of SiOx limits its content below 15 wt%, impeding the capacity increase in anodes. To address this issue, various prelithiation techniques have been proposed, which can improve the ICE of high-capacity anode materials. In this review paper, we introduce the principles and expected effects of prelithiation techniques reported so far. According to the reaction mechanisms, the strategies are categorized. Mainly, we focus on the recent progress of solution-based chemical prelithiation methods with commercial viability, of which lithiation reaction occurs homogeneously at liquid-solid interfaces. We believe that developing a cost-effective and mass-scalable prelithiation process holds the key to dominating the anode market for next-generation LIBs.