• 제목/요약/키워드: Distributed Bragg Reflector (DBR)

검색결과 39건 처리시간 0.022초

Fabrication and Characterization of Free-Standing DBR Porous Silicon Film

  • Um, Sungyong;Sohn, Honglae
    • 통합자연과학논문집
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    • 제7권1호
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    • pp.1-4
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    • 2014
  • Distributed Bragg reflector porous silicon of different characteristics were formed to determine their optical constants in the visible wavelength range using a periodic square wave current between low and high current densities. The surface and cross-sectional SEM images of distributed Bragg reflector porous silicon were obtained using a cold field emission scanning electron microscope. The surface image of distributed Bragg reflector porous silicon indicates that the distributions of pores are even. The cross-sectional image illustrates that the multilayer of distributed Bragg reflector porous silicon exhibits a depth of few microns and applying of square current density during the etching process results two distinct refractive indices in the contrast. Distributed Bragg reflector porous silicon exhibited a porosity depth profile that related directly to the current-time profile used in etch. Its free-standing film was obtained by applying an electro-polishing current.

파장가변 Sampled-grating Distributed Bragg Reflector (SG-DBR) 레이저 다이오드 제작 (Fabrication and Characteristics of Tunable Butt-Coupled Sampled-grating Distributed Bragg Reflector (SG-DBR) Laser Diodes)

  • 이지면;오수환;고현성;박문호
    • 한국전기전자재료학회논문지
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    • 제17권1호
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    • pp.16-20
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    • 2004
  • We present the fabrication and performance of wavelength tunable butt coupled (BT) sampled-grating (SG) distributed bragg reflector (DBR) - planar buried heterostructure (PBH) laser diodes (LD). The fabricated LD showed the high optical output power due to the high coupling efficiency between active and passive components by the BT coupling methods. The series resistance and diode ideality factor of LD were measured to be 3.7 $\Omega$ and 1.35, respectively. The average threshold current was 25 ㎃. The output powers of BT-SG DBR-PBH-LD were obtained to be as high as 12.3 and 24.56 ㎽ at 100 and 200 ㎃, respectively. The maximum wavelength tuning range was about 31 nm and the side mode suppression ratio was about 37 dB.

Distributed Bragg Reflector, Microcavity 구조를 갖는 다공질규소의 반사율 스펙트럼 (Reflectance spectrum properties of DBR and microcavity porous silicon)

  • 김영유;김한중
    • 한국결정성장학회지
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    • 제19권6호
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    • pp.293-297
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    • 2009
  • 본 연구에서는 p형 단결정 규소 기판을 에칭시켜 다층구조를 갖는 DBR 및 Microcavity 다공질규소를 제작하고, 그 반사율 스펙트럼을 조사하였다. 그 결과 다층구조를 갖는 다공질규소의 반사율 스펙트럼에서 프린지 패턴의 수는 단일층 다공질규소의 경우보다 상대적으로 많았으며, 특정 파장에서 반사율은 90 % 이상으로 나타났다. 그리고 DBR 다공질규소에서 최대 반사율 봉우리의 FWHM 값은 33 nm로 매우 좁게 나타났다.

수소화 비정질 실리콘 기반 분배 브래그 하부 반사기를 적용한 고효율 광 격자 커플러 (High-Efficency Grating Coupler with Distributed-Bragg Bottom Reflector Based on Hydrogenated Amorphous Silicon)

  • 박지환
    • 한국전자통신학회논문지
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    • 제16권2호
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    • pp.241-246
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    • 2021
  • 본 연구에서는 수소화 비정질 실리콘 (a-Si:H) 기반 분배 브래그 반사기 (Distributed Bragg Reflector, DBR)을 적용한 광 격자 커플러를 제안하여 라이다 시스템에서 고효율의 나노 광 방사기로 사용할 수 있다는 가능성을 보여주었다. 분배 브래그 반사기는 아랫방향으로 누설되는 광학 장을 감소시켜 커플링 효율을 높게 한다. 결과적으로 제안된 광 격자 커플러는 기존의 광 격자 커플러와 비교하여 약 1.4 배가 높은 far-field 세기를 가진다는 것을 보여주었다.

DBR 다공성 실리콘을 이용한 휘발성 유기화합물의 감지 (Detection of Voletile Organic Compounds by Using DBR Porous Silicon)

  • 박철영
    • 통합자연과학논문집
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    • 제2권4호
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    • pp.275-279
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    • 2009
  • Recently, number of studies for porous silicon (PSi) have been investigated by many researchers. Multistructured porous silicon such as a distributed Bragg reflector (DBR) PSi, has been a topic of interest, because of its unique optical properties. DBR PSi were prepared by using an electrochemical etch of $P{^+}{^+}$-type silicon wafer with resistivity between 0.1 and $10m{\Omega}cm$. The electrochemical etch with square wave current density results in two different refractive indices in the porous layer. In this work, DBR porous silicon chips for a simple and portable organic vapor-sensing device have fabricated. The optical characteristics of DBR PSi have been investigated. DBR porous silicon have been characterized by FT-IR and Ocean optics 2000 spectrometer. The device used DBR PSi chip has been demonstrated as an excellent gas sensor, showing a great senstivity to organic vapor at room temperature.

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Electroabsorption modulator-integrated distributed Bragg reflector laser diode for C-band WDM-based networks

  • Oh-Kee Kwon;Chul-Wook Lee;Ki-Soo Kim
    • ETRI Journal
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    • 제45권1호
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    • pp.163-170
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    • 2023
  • We report an electroabsorption modulator (EAM)-integrated distributed Bragg reflector laser diode (DBR-LD) capable of supporting a high data rate and a wide wavelength tuning. The DBR-LD contains two tuning elements, plasma and heater tunings, both of which are implemented in the DBR section, which have blue-shift and red-shift in the Bragg wavelength through a current injection, respectively. The light created from the DBR-LD is intensity-modulated through the EAM voltage, which is integrated monolithically with the DBRLD using a butt-joint coupling method. The fabricated chip shows a threshold current of approximately 8 mA, tuning range of greater than 30 nm, and static extinction ratio of higher than 20 dB while maintaining a side mode suppression ratio of greater than 40 dB under a window of 1550 nm. To evaluate its modulation properties, the chip was bonded onto a mount including a radiofrequency line and a load resistor showing clear eye openings at data rates of 25 Gb/s nonreturn-to-zero and 50 Gb/s pulse amplitude modulation 4-level, respectively.

In-line Dual-Mode DBR Laser Diode for Terahertz Wave Source

  • Chung, Youngchul
    • Current Optics and Photonics
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    • 제4권6호
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    • pp.461-465
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    • 2020
  • A dual-mode laser terahertz source consisting of two in-line distributed Bragg reflector (DBR) laser diodes (LD) is proposed. It is less susceptible to residual reflections from facets than an in-line dual-mode distributed feedback (DFB) LD. The characteristics of the proposed terahertz source are theoretically investigated using a split-step time-domain simulation. It is shown that terahertz waves of frequencies from 385 GHz to 1725 GHz can be generated by appropriate thermal tuning of two DBR LDs. The dual-mode DBR LD terahertz source exhibits good spectral quality for residual facet reflectivity below 0.02, but facet reflectivity of the in-line dual-mode DFB LD terahertz source should be below 0.002 to provide similar spectral quality.

A Four-Channel Laser Array with Four 10 Gbps Monolithic EAMs Each Integrated with a DBR Laser

  • Sim, Jae-Sik;Kim, Sung-Bock;Kwon, Yong-Hwan;Baek, Yong-Soon;Ryu, Sang-Wan
    • ETRI Journal
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    • 제28권4호
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    • pp.533-536
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    • 2006
  • A distributed Bragg reflector (DBR) laser and a high speed electroabsorption modulator (EAM) are integrated on the basis of the selective area growth technique. The typical threshold current is 4 to 6 mA, and the side mode suppression ratio is over 40 dB with single mode operation at 1550 nm. The DBR laser exhibits 2.5 to 3.3 mW fiber output power at a laser gain current of 100 mA, and a modulator bias voltage of 0 V. The 3 dB bandwidth is 13 GHz. A 10 Gbps non-return to zero operation with 12 dB extinction ratio is obtained. A four-channel laser array with 100 GHz wavelength spacing was fabricated and its operation at the designed wavelength was confirmed.

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넓은 파장 가변영역을 가지는 반도체 레이저를 위한 Nonlinearly Chirped Grating의 설계 (Design of the nonlinearly chirped grating for broadly tunable semiconductor lasers)

  • 김덕봉;최안식;윤태훈;김재창;김선호
    • 한국광학회지
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    • 제7권4호
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    • pp.370-374
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    • 1996
  • Superstructure Grating Distributed-Bragg Reflector(SSG DBR) 레이저는 비교적 높은 Mode Suppression Ratio(MSR)을 가지면서 넓은 파장 대에서 불연속 파장가변 특성을 가진다. 그러나 SSG DBR 레이저는 출력파장을 가변 시킬 때 파장가변 영역을 구성하는 채널 중 몇 개가 빠지는 현상이 실험을 통해 관찰되어 왔다. 우리는 수치해석적인 시뮬레이션을 통해 이 현상이 SSG DBR 거울을 구성하는 linearly chirped grating의 불균일한 반사 피크 높이에 의한 영향임을 발견했고 반사율 피크 높이를 거의 균일하게 만들 수 있는 nonlinearly chirped grating을 제안한다. 그리고 이 거울을 가지는 파장 가변 레이저가 채널의 손실 없이 넓은 파장가변 영역에서 동작하는 것을 확인했다. 그러므로 nonlinearly chirped grating을 가지는 DBR 거울은 넓은 파장가변 영역을 가지는 가변 레이저에 적용할 수 있다.

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