• 제목/요약/키워드: Direct current sputtering

검색결과 81건 처리시간 0.028초

Electrical, optical, and thermal properties of AZO co-sputtered ITO electrode for organic light emitting diodes

  • Park, Young-Seok;Kim, Han-Ki
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.416-419
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    • 2008
  • In this study, we report on the characteristics of Aldoped ZnO (AZO) co-sputtered indium tin oxide (ITO) films prepared by dual target direct current (DC) magnetron sputtering at room temperature for organic light emitting diodes (OLEDs). The electrical and optical properties of co-sputtered IAZTO electrode were critically dependent on the DC power of AZO. Furthermore, the characteristics of co-sputtered IAZTO electrode were influenced by rapid thermal annealing temperature.

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광역평탄화에 따른 투명전도박막의 표면특성 (Surface Properties of ITO Thin Film by Planarization)

  • 최권우;이우선;서용진
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.95-96
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    • 2006
  • ITO thin film is generally fabricated by various methods such as spray, CVD, evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive DC sputtering. However, some problems such as peaks, bumps, large particles, and pin-holes on the surface of ITO thin film were reported, which caused the destruction of color quality, the reduction of device life time, and short-circuit. Chemical mechanical polishing (CMP) process is one of the suitable solutions which could solve the problems.

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DC 스퍼터법과 유도결합형 플라즈마 스퍼터법으로 증착된 HfN 코팅막의 물성 비교연구 (A Comparative Study of Nanocrystalline HfN Coatings Fabricated by Direct Current and Inductively Coupled Plasma Assisted Magnetron Sputtering)

  • 전성용;이소연
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2017년도 춘계학술대회 논문집
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    • pp.103.1-103.1
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    • 2017
  • Nanocrystalline HfN coatings were prepared by reactively sputtering Hf metal target with N2 gas using a magnetron sputtering system operated in DC and ICP (inductively coupled plasma) condition with various powers. The effects of ICP power, ranging from 0 to 200 W, on the coating microstructure, corrosion and mechanical properties were systematically investigated with FE-SEM, AFM, potentiostat and nanoindentation. The results show that ICP power has a significant influence on coating microstructure and mechanical properties of HfN coatings. With the increasing of ICP power, coating microstructure evolves from the columnar structure of DC process to a highly dense one. Average grain size and nano hardness of HfN coatings were also investigated with increasing ICP powers.

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유도결합형 플라즈마 마그네트론 스피터로 제작된 CrN 코팅막의 전기화학적 물성 비교 연구 (A comparative study of electrochemical properties in CrN films prepared by inductively coupled plasma magnetron sputtering)

  • 장훈;전성용
    • 한국표면공학회지
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    • 제55권2호
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    • pp.70-76
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    • 2022
  • In this paper, we compared the properties of the chromium nitride (CrN) films prepared by inductively coupled plasma magnetron sputtering (ICPMS). As a comparison, CrN film prepared by a direct current magnetron sputtering (dcMS) is also studied. The crystal structure, surface and cross-sectional microstructure and composite properties of the as-deposited CrN films are compared by x-ray diffraction, field emission scanning electron microscopy, nanoindentation tester and corrosion resistance tester, respectively. It is found that the as-deposited CrN films by ICPMS grew preferentially on (200) plane when compared with that by dcMS on (111) plane. As a result, the films deposited by ICPMS have a very compact microstructure with high hardness: the nanoindentation hardness reached 19.8 GPa and 13.5 GPa by dcMS, respectively. Besides, the residual stress of CrN films prepared by ICPMS is also relatively large. After measuring the corrosion resistance, the corrosion current of films prepared by ICPMS was three order of magnitude smaller than that of CrN films deposited by dcMS.

DC 스퍼터법과 유도결합 플라즈마를 이용한 마그네트론 스퍼터링으로 제작된 나노결정질 TiAlN 코팅막의 물성 비교 연구 (A Comparative Study of Nanocrystalline TiAlN Coatings Fabricated by Direct Current and Inductively Coupled Plasma Assisted Magnetron Sputtering)

  • 전성용;김세철
    • 한국세라믹학회지
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    • 제51권5호
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    • pp.375-379
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    • 2014
  • Nanocrystalline TiAlN coatings were prepared by reactively sputtering TiAl metal target with $N_2$ gas. This was done using a magnetron sputtering system operated in DC and ICP (inductively coupled plasma) conditions at various power levels. The effect of ICP power (from 0 to 300 W) on the coating microstructure, corrosion and mechanical properties were systematically investigated using FE-SEM, AFM and nanoindentation. The results show that ICP power has a significant influence on coating microstructure and mechanical properties of TiAlN coatings. With increasing ICP power, the coating microstructure evolved from the columnar structure typical of DC sputtering processes to a highly dense one. Average grain size of TiAlN coatings decreased from 15.6 to 5.9 nm with increasing ICP power. The maximum nano-hardness (67.9 GPa) was obtained for the coatings deposited at 300 W of ICP power. The smoothest surface morphology (Ra roughness 5.1 nm) was obtained for the TiAlN coating sputtered at 300 W ICP power.

Implementation of High Carrier Mobility in Al-N Codoped p-Type ZnO Thin Films Fabricated by Direct Current Magnetron Sputtering with ZnO:Al2O3 Ceramic Target

  • Jin, Hujie;Xu, Bing;Park, Choon-Bae
    • Transactions on Electrical and Electronic Materials
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    • 제12권4호
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    • pp.169-173
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    • 2011
  • In this study, Al-N codoped p-type zinc oxide (ZnO) thin films were deposited on Si and homo-buffer layer templates in a mixture of $N_2$ and $O_2$ gas with ceramic ZnO:(2 wt% $Al_2O_3$) as a sputtering target using DC- magnetron sputtering. X-ray diffraction spectra of two-theta diffraction showed that all films have a predominant (002) peak of ZnO Wurtzite structure. As the $N_2$ fraction in the mixed $N_2$ and $O_2$ gases increased, field emission secondary electron microscopy revealed that the surface appearance of codoped films on Si varied from smooth to textured structure. The p-type ZnO thin films showed carrier concentration in the range of $1.5{\times}10^{15}-2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2-2.864 ${\Omega}cm$, and mobility in the range of $3.99-31.6\;cm^2V^{-1}s^{-1}$ respectively.

몰리브덴 전극의 형성조건에 따른 $CU(InGa)Se_2$ 박막 태양전지의 특성 (Characteristics of $CU(InGa)Se_2$Thin Film Solar Cells with Deposition Condition of Mo Electrode)

  • 김석기;한상옥
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제50권12호
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    • pp.607-613
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    • 2001
  • Molybdenum thin films were deposited on the soda lime glass(SLG) substrates by direct-current planar magnetron sputtering, with a sputtering power density of $4.44W/cm^2$. The working pressure was varied from 0.5 mtorr to 20 mtorr to gain a better understanding of the effect of sputtering pressure on the morphology and microstructure of the Mo film. Thin films of $CU(InGa)Se_2$ (CIGS) were deposited on the Mo-coated glass by three stage co-evaporation process. The highest efficiency device was obtained at the maximum value of the tensive stress. The morphology of Mo-coated films were examined by using scanning electron microscopy The film's microstructure, such as the preferred orientation, the full width at half-maximum(FWHM), and the residual intrinsic stress were examined by X-ray diffraction.

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Hard coating 응용을 위한 DC 마그네트론 스퍼터링 방법을 이용하여 증착한 TiN 박막의 특성에 대한 연구 (Characteristic properties of TiN thin films prepared by DC magnetron sputtering method for hard coatings)

  • 김영렬;박용섭;최원석;홍병유
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.354-354
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    • 2007
  • Titanium nitride (TiN) thin films are widely used for hard coatings due to their superior hardness. In this paper, we wanted see how the films properties are changed according to DC power. TiN thin films were deposited by direct current (DC) magnetron sputtering method using TiN compound target on silicon substrates. The films structural properties are examined by X-ray Diffractions (XRD) and tribological properties are measured by nano-indentation, nano-scratch tester, nano-stress tester. Especially in DC power of 150 W, the maximum hardness and the minimum residual stress of TiN film exhibited about 25 GPa and 1 GPa, respectively. And also, the critical load of TiN film prepared by magnetron sputtering method were measured over 30 N.

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DC 마그네트론 스퍼터링 방법을 이용하여 증착한 IGZO 박막트랜지스터의 특성 (Characteristics of IGZO Thin Film Transistor Deposited by DC Magnetron Sputtering)

  • 김성연;명재민
    • 한국재료학회지
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    • 제19권1호
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    • pp.24-27
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    • 2009
  • Indium Gallium Zinc Oxide (IGZO) thin films were deposited onto 300 nm-thick oxidized Si substrates and glass substrates by direct current (DC) magnetron sputtering of IGZO targets at room temperature. FESEM and XRD analyses indicate that non-annealed and annealed IGZO thin films exhibit an amorphous structure. To investigate the effect of an annealing treatment, the films were thermally treated at $300^{\circ}C$ for 1hr in air. The IGZO TFTs structure was a bottom-gate type in which electrodes were deposited by the DC magnetron sputtering of Ti and Au targets at room temperature. The non-annealed and annealed IGZO TFTs exhibit an $I_{on}/I_{off}$ ratio of more than $10^5$. The saturation mobility and threshold voltage of nonannealed IGZO TFTs was $4.92{\times}10^{-1}cm^2/V{\cdot}s$ and 1.46V, respectively, whereas these values for the annealed TFTs were $1.49{\times}10^{-1}cm^2/V{\cdot}$ and 15.43V, respectively. It is believed that an increase in the surface roughness after an annealing treatment degrades the quality of the device. The transmittances of the IGZO thin films were approximately 80%. These results demonstrate that IGZO thin films are suitable for use as transparent thin film transistors (TTFTs).

DC 스퍼터링을 이용한 소다라임 유리 기판상에 2차원 황화텅스텐 박막 형성 공정 (DC Sputtering Process of 2-Dimensional Tungsten Disulfide Thin Films on Soda-Lime Glass Substrates)

  • 마상민;권상직;조의식
    • 반도체디스플레이기술학회지
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    • 제17권3호
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    • pp.31-35
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    • 2018
  • Tungsten disulfide($WS_2$) thin films were directly deposited by direct-current(DC) sputtering and annealed by rapid thermal processing(RTP) to materialize two-dimensional p-type transition metal dichalcogenide (TMDC) thin films on soda-lime glass substrates without any complicated exfoliation/transfer process. $WS_2$ thin films deposited at various DC sputtering powers from 80 W to 160W were annealed at different temperatures from $400^{\circ}C$ to $550^{\circ}C$ considering the melting temperature of soda-lime glass. The optical microscope results showed the stable surface morphologies of the $WS_2$ thin films without any defects. The X-ray photoelectron spectroscopy (XPS) results and the Hall measurement results showed stable binding energies of W and S and high carrier mobilities of $WS_2$ thin films.