• Journal of the Korean Institute of Telematics and Electronics
• /
• v.11 no.6
• /
• pp.44-49
• /
• 1974

reactance modulator composed of multi-stage phase modulator utilizing VVC diodes as variable reactance elements and an oscillartor-modulator, utilizing a VVC diode as a tuning element, coupled to a crystal resonator through an artificial λ/4 network are introduced and their characteristics as FM modulator are compared mutually from the practical view points. especially, to get high modulation sensitivity of reactance modulators using VVC diodes, making a multi-stage modulation distortion characteristics of multi-stage modulator was necessary. The harmonic moj\dulationdistorion characteristics of multi-stage reactance modulator is analized in detall. Multi-stage reachance modulator is preferable to maintain sufficiently stable carrier frequency over the wide range of temperature and a mobile-transceiver was made through this method. On the other hand, FM-Quartz oscillator using a VVc diode is suitavle for handy-talkies of good quality were made through this method.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.46 no.9
• /
• pp.1-6
• /
• 2009

We fabricated Gunn diodes with a double heat sink which has anode heat sink as well as cathode heat sink for efficient heat dissipation. We compared the DC characteristics of a double heat sink diode with a conventional cathode heat sink Gunn diode. It was shown that the Gunn diode with a single heat sink has the threshold voltage of 3 V, the peak current of 744 mA and the breakdown voltage of 4.8 V. Also, the Gunn diode with a double heat sink showed the threshold voltage of 2.5 V, the peak current of 778 mA and the breakdown voltage over 5 V.

• Korean Journal of Materials Research
• /
• v.26 no.8
• /
• pp.422-426
• /
• 2016

With the increase in installed solar energy capacity, comparison and analysis of the physical property values of solar cells are becoming increasingly important for production. Therefore, research on determining the physical characteristic values of solar cells is being actively pursued. In this study, a diode equation, which is commonly used to describe the I-V behavior and determine the electrical characteristic values of solar cells, was applied. Using this method, it is possible to determine the diode ideality factor (n) and series resistance ($R_s$) based on light I-V measurements. Thus, using a commercial screen-printed solar cell and an interdigitated back-contact solar cell, we determined the ideality factor (n) and series resistance ($R_s$) with a modified diode equation method for the light I-V curves. We also used the sun-shade method to determine the ideality factor (n) and series resistance ($R_s$) of the samples. The values determined using the two methods were similar. However, given the error in the sun-shade method, the diode equation is considered more useful than the sun-shade method for analyzing the electrical characteristics because it determines the ideality factor (n) and series resistance ($R_s$) based on the light I-V curves.

• Proceedings of the Korean Society of Near Infrared Spectroscopy Conference
• /
• 2001.06a
• /
• pp.1619-1619
• /
• 2001

Ourwork aims to assess the content of dry matter, protein, cell wall parameters and water soluble carbohydrates in forages without having to handle samples, transport them to a laboratory, dry, grind and chemically analyze them. for this purpose, the concept of fresh forage analysis under field conditions by means of compact integrated NIRS InGaAs-diode array instruments on small plot harvesters is being evaluated for plant breeding trials. This work was performed with the world first commercial experimental forage plot harvester equipped with a NIRS module for the collection, compression, and scanning of forage samples (including automatic referencing and dark current measure ments). It was used for harvesting and analyzing a number of typical forage grass and forage legume plot trials. After NIRS measurements in the field each sample was again analyzed in the laboratory by means of a conventional grating spectrometer equipped with Si-and PbS-detectors. Conventional laboratory analysis of the samples was restricted to dry matter (DM) content by means of oven drying at 105. Routine chemometric procedures were then employed to assess the comparative accuracy and precision of the DM assessments in the spectral range between 950 and 1650nm by the NIRS diode array as well as by the conventional NIRS scanning instrument. The results of this study confirmed that the type of NIRS diode array instrument employed here functioned well even in rugged field operations. further refinements proved to be necessary for optimizing the automatic filling of the sample compartment to adjust for the wide variation in forage material under conditions of extremely low or high harvest yields. The error achieved in calibrating the apparatus for forages of typical DM content proved to be satisfactory (SECV < 1.0). Possibly as a consequence of higher sampling errors, its performance in atypical forages with elevated DM contents was less satisfactory. The error level obtained on the conventional grating NIR spectrometer was similar to that of the diode array instrument for both types of forage.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.20 no.1
• /
• pp.12-20
• /
• 2009

In this paper, we introduced the large signal model of a PIN diode and presented the measurement methods for each parameter of the large signal model. The elements of the PIN diode model are classified into the elements with a constant value and the elements depending on the junction voltage. We implemented the constant elements by lumped elements and the voltage-dependent elements by a SDD in ADS. The developed large signal model was successfully worked with various circuit simulations, such as simple DC, AC, S-parameter, Transient, and HB simulations. In order to verify the developed large signal model, we compared that the measured results of a limiter and a attenuator with the simulated results using the PIN diode model, which are in good agreement.

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.1
• /
• pp.47-51
• /
• 2013

A high power MOSFET switch based on a 0.35 ${\mu}m$ CMOS process has been developed for the protection IC of a rechargeable battery. In this process, a vertical double diffused MOS (VDMOS) using 3 ${\mu}m$-thick epi-taxy layer is integrated with a Zener diode. The p-n+Zener diode is fabricated on top of the VDMOS and used to protect the VDMOS from high voltage switching and electrostatic discharge voltage. A fully integrated digital circuit with power devices has also been developed for a rechargeable battery. The experiment indicates that both breakdown voltage and leakage current depend on the doping concentration of the Zener diode. The dependency of the breakdown voltage on doping concentration is in a trade-off relationship with that of the leakage current. The breakdown voltage is obtained to exceed 14 V and the leakage current is controlled under 0.5 ${\mu}A$. The proposed integrated module with the application of the power MOSFET indicates the high performance of the protection IC, where the overcharge delay time and detection voltage are controlled within 1.1 s and 4.2 V, respectively.

• Journal of the Korean Society for Precision Engineering
• /
• v.26 no.7
• /
• pp.65-72
• /
• 2009

Laser interferometry is widely used as a measuring system in many fields because of its high resolution and its ability to measure a broad area in real-time all at once. In conventional laser interferometry, for example out-of-plane ESPI (Electronic Speckle Pattern Interferometry), in plane ESPI, shearography and holography, it uses PZT or other components as a phase shift instrumentation to extract 3-D deformation data, vibration mode and others. However, in most cases PZT has some disadvantages, which include nonlinear errors and limited time of use. In the present study, a new type of laser interferometry using a laser diode is proposed. Using Laser Diode Sinusoidal Phase Modulating (LD-SPM) interferometry, the phase modulation can be directly modulated by controlling the laser diode injection current thereby eliminating the need for PZT and its components. This makes the interferometry more compact. This paper reports on a new approach to the LD (Laser Diode) Modulating interferometry that involves four-frame phase shift method. This study proposes a four-frame phase mapping algorithm, which was developed to have a guaranteed application, to stabilize the system in the field and to be a user-friendly GUI. In this paper, the theory for LD wavelength modulation and sinusoidal phase modulation of LD modulating interferometry is shown. Using modulating laser and research of measurement algorithm does comparison with existent ESPI measurement algorithm. Algorithm measures using GPIB communication through most LabVIEW 8.2. GPIB communication does alteration through PC. Transformation of measurement object measures through modulating laser algorithm that develops. Comparison of algorithm of modulating laser developed newly with existent PZT algorithm compares transformation price through 3-D. Comparison of 4-frame phase mapping, unwrapping, 3-D is then introduced.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.16 no.3
• /
• pp.1620-1625
• /
• 2015

In this study, a variety of industrial gears, shafts, chains, rollers, mold, etc. are widely used inautomotive steel carbon steel for machine structural SM45C typical material used for the experiments. In order to cure the surface of the test piece after the rough grinding and fine grinding was performed in order polishing. Perform the surface hardening of SM45C lacal area by using a diode laser. The output of the laser diode and the feed rate to the process variable. Micro-hardness testing, microstructure testing, scanning electron microscope testing(SEM), the heat input to the analysis. After analyzing the experiment to compare the mechanical properties of the material. When using a diode laser to assess the soundness of the surface hardening. Accordingly, the process for deriving the optimum demonstrate the feasibility.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.14 no.6
• /
• pp.514-521
• /
• 2009

This paper deals with a new overvoltage snubber for a diode-clamped 3-level IGBT inverter. Usually most power converters use snubber circuits to protect the switching devices from voltage spike. However, it is difficult for the diode-clamped multi-level converter to be protected from voltage spike with overvoltage snubber since the series connection of the switching devices. To solve the problem the characteristic of a overvoltage snubber for a DC-DC converter is analyzed, and a new snubber for a diode clamped 3-level inverter is proposed. The performance of the proposed snubber is verified through experiments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.350-353
• /
• 2002

High voltage SiC Schottky barrier diodes with field plate structure have been fabricated and characterized. N-type 4H-SiC wafer with an epilayer of ∼10$\^$15/㎤ doping level was used as a starting material. Various Schottky metals such as Ni, Pt, Ta, Ti were sputtered and thermally-evaporated on the low-doped epilayer. Ohmic contact was formed at the backside of the SiC wafer by annealing at 950$^{\circ}C$ for 90 sec in argon using rapid thermal annealer. Field oxide of 550${\AA}$ in thickness was formed by a wet oxidation process at l150$^{\circ}C$ for 3h and subsequently heat-treated at l150$^{\circ}C$ for 30 min in argon for improving oxide quality. The turn-on voltages of the Ni/4H-SiC Schottky diode was 1.6V which was much higher than those of Pt(1.0V), Ta(0.7V) and Ti(0.7). The voltage drop was measured at the current density of 100A/$\textrm{cm}^2$ showing 2.1V for Ni Schottky diode, 1.45V for Pt 1.35V, for Ta, and 1.25V for Ti, respectively. The maximum reverse breakdown voltage was measured 1100V in the file plated Schottky diodes with 101an thick epilayer.