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Fabrication of GaAs Gunn Diodes With A Double Heat Sink  

Kim, Mi-Ra (Millimeter-wave INnovation Technology research center (MINT), Dongguk University)
Rhee, Jin-Koo (Millimeter-wave INnovation Technology research center (MINT), Dongguk University)
Chae, Yeon-Sik (Millimeter-wave INnovation Technology research center (MINT), Dongguk University)
Lim, Hyun-Jun (Millimeter-wave INnovation Technology research center (MINT), Dongguk University)
Choi, Jae-Hyun (Agency for Defense Development)
Kim, Wan-Joo (Agency for Defense Development)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.46, no.9, 2009 , pp. 1-6 More about this Journal
Abstract
We fabricated Gunn diodes with a double heat sink which has anode heat sink as well as cathode heat sink for efficient heat dissipation. We compared the DC characteristics of a double heat sink diode with a conventional cathode heat sink Gunn diode. It was shown that the Gunn diode with a single heat sink has the threshold voltage of 3 V, the peak current of 744 mA and the breakdown voltage of 4.8 V. Also, the Gunn diode with a double heat sink showed the threshold voltage of 2.5 V, the peak current of 778 mA and the breakdown voltage over 5 V.
Keywords
GaAs; Gunn diode; Double heat sink;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
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