• 제목/요약/키워드: Dimensional Film

검색결과 680건 처리시간 0.033초

레이저 결정화 방법을 적용한 3차원 적층 CMOS 인버터의 전기적 특성 개선 (Electrical characteristics of 3-D stacked CMOS Inverters using laser crystallization method)

  • 이우현;조원주;오순영;안창근;정종완
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
    • /
    • pp.118-119
    • /
    • 2007
  • High performance three-dimensional (3-D) stacked poly-Si complementary metal-oxide semiconductor (CMOS) inverters with a high quality laser crystallized channel were fabricated. Low temperature crystallization methods of a-Si film using the excimer-laser annealing (ELA) and sequential lateral solidification (SLS) were performed. The NMOS thin-film-transistor (TFT) at lower layer of CMOS was fabricated on oxidized bulk Si substrate, and the PMOS TFT at upper layer of CMOS was fabricated on interlayer dielectric film. The 3-D stacked poly-Si CMOS inverter showed excellent electrical characteristics and was enough for the vertical integrated CMOS applications.

  • PDF

Three-Dimensional Nanofabrication with Nanotransfer Printing and Atomic Layer Deposition

  • 김수환;한규석;한기복;성명모
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
    • /
    • pp.87-87
    • /
    • 2010
  • We report a new patterning technique of inorganic materials by using thin-film transfer printing (TFTP) with atomic layer deposition. This method consists of the atomic layer deposition (ALD) of inorganic thin film and a nanotransfer printing (nTP) that is based on a water-mediated transfer process. In the TFTP method, the Al2O3 ALD growth occurs on FTS-coated PDMS stamp without specific chemical species, such as hydroxyl group. The CF3-terminated alkylsiloxane monolayer, which is coated on PDMS stamp, provides a weak adhesion between the deposited Al2O3 and stamp, and promotes the easy and complete release of Al2O3 film from the stamp. And also, the water layer serves as an adhesion layer to provide good conformal contact and form strong covalent bonding between the Al2O3 layer and Si substrate. Thus, the TFTP technique is potentially useful for making nanochannels of various inorganic materials.

  • PDF

Functional Analysis of Music Used in Film

초박막 폴리머 강유전체 박막의 특성 (Characteristics of Ultra-thin Polymer Ferroelectric Films)

  • 김광호
    • 반도체디스플레이기술학회지
    • /
    • 제19권4호
    • /
    • pp.84-87
    • /
    • 2020
  • The properties of ultra-thin two-dimensional (2D) organic ferroelectric Langmuir-Blodgett (LB) films of the poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] were investigated to find possible applicability in flexible and wearable electronics applications. In the C-V characteristics of the MFM capacitor of 2-monolayer of 5 nm films, a butterfly hysteresis curve due to the ferroelectricity of P(VDF-TrFE) was confirmed. Typical residual polarization value was measured at 2μC/㎠. When the MFM capacitor with ultra-thin ferroelectric film was measured by applying a 10 Hz bipolar pulse, it was shown that 65% of the initial polarization value in 105 cycles deteriorated the polarization. The leakage current density of the 2-monolayer film was maintained at about 5 × 10-8 A/㎠ for the case at a 5MV/cm electric field. The resistivity of the 2-monolayer film in the case at an electric field at 5 MV/cm was more than 2.35 × 1013 Ω·cm.

감압화학증착법으로 성장된 실리콘-게르마늄 반도체 에피층에서 붕소의 이차원 도핑 특성 (Two Dimensional Boron Doping Properties in SiGe Semiconductor Epitaxial Layers Grown by Reduced Pressure Chemical Vapor Deposition)

  • 심규환
    • 한국전기전자재료학회논문지
    • /
    • 제17권12호
    • /
    • pp.1301-1307
    • /
    • 2004
  • Reduced pressure chemical vapor deposition(RPCYD) technology has been investigated for the growth of SiGe epitaxial films with two dimensional in-situ doped boron impurities. The two dimensional $\delta$-doped impurities can supply high mobility carriers into the channel of SiGe heterostructure MOSFETs(HMOS). Process parameters including substrate temperature, flow rate of dopant gas, and structure of epitaxial layers presented significant influence on the shape of two dimensional dopant distribution. Weak bonds of germanium hydrides could promote high incorporation efficiency of boron atoms on film surface. Meanwhile the negligible diffusion coefficient in SiGe prohibits the dispersion of boron atoms: that is, very sharp, well defined two-dimensional doping could be obtained within a few atomic layers. Peak concentration and full-width-at-half-maximum of boron profiles in SiGe could be achieved in the range of 10$^{18}$ -10$^{20}$ cm$^{-3}$ and below 5 nm, respectively. These experimental results suggest that the present method is particularly suitable for HMOS devices requiring a high-precision channel for superior performance in terms of operation speed and noise levels to the present conventional CMOS technology.

막냉각 홀의 측면 방향 분사각, 확장각 및 주기가 막냉각 효율에 미치는 영향 (Effects of Compound Angle, Diffuser Angle, and Hole Pitch on Film-cooling Effectiveness)

  • 김선민;이기돈;김광용
    • 대한기계학회논문집B
    • /
    • 제35권9호
    • /
    • pp.903-913
    • /
    • 2011
  • 본 연구에서는 가스터빈 블레이드의 냉각을 위해 사용되는 막냉각 홀을 대상으로 다양한 형상변수들이 막냉각 효율에 미치는 영향을 평가하기 위한 수치적 연구를 수행하였다. 삼차원 압축성 Reynolds-averaged Navier-Stokes 해석을 수행하였으며, 난류모델로는 shear stress transport 모델이 사용되었다. 해석을 통해 홀의 형상, 측면 방향 분사각, 홀의 주기 및 분사율이 막냉각 효율에 미치는 영향이 평가되었다. 해석결과, 원통형홀의 경우 측면 방향 분사각이 존재할 때 월등히 향상된 막냉각 효율을 보여주었으며, 홴형상 홀의 경우 측면 방향 분사각이 $20^{\circ}{\sim}30^{\circ}$일 때 가장 높은 막냉각 효율을 보여주었다. 또한 홀의 주기의 변화에 따른 성능평가 결과 높은 분사율일 때가 낮은 분사율의 경우보다 홀의 주기에 의존하는 경향을 보였다.