• Bulletin of the Korean Chemical Society
• /
• 제33권7호
• /
• pp.2193-2199
• /
• 2012

A series of novel polytriazoleimides were prepared from various aromatic dianhydrides and a new kind of 1,2,3-triazole-containing aromatic diamine synthesized by the Cu (I)-catalyzed 1,3-dipolar cycloaddition reaction in DMAc, and characterized by FT-IR, $^1H$-NMR, XRD, DSC and TGA techniques. The results show the polytriazoleimides are soluble in most of strong polar solvents and have inherent viscosity values of 0.51-0.62 dL/g(DMAc). The polytriazoleimide films exhibit a tensile strength of 62.3-104.5 MPa and an elongation at breakage of 4.0-8.1%, a glass transition temperature ($T_g$) of $257-275^{\circ}C$, a decomposition temperature (at 5% weight loss) of $350-401^{\circ}C$ in $N_2$ atmosphere, and a dielectric constant of 2.47-3.01 at 10 MHz, which depend on the structure of the polymers. The polytriazoleimides perform good resistance to acid and alkali solution.

• 한국인터넷방송통신학회논문지
• /
• 제16권5호
• /
• pp.179-184
• /
• 2016

발전소가 생산한 고전압 전력을 전달하기 위해 사용하는 케이블은 주로 6.6 kV XLPE 케이블(또는 CV케이블)이다. 제작 기술, 설치환경 및 사용조건에 다르겠지만, 케이블은 설치하여 동작함과 동시에 열화과정이 진행된다. 접속재의 경우, 제조 결함이나 공사 결함이 있는 경우 대체로 동작 후 약 3 년 내에 고장을 일으키며, 그렇지 않는 경우 수명이 20-30 년을 지속하는 경우가 많다. 케이블 시스템(케이블 자체 및 접속재)의 상태가 나빠지는 경우, 절연 파괴현상으로 인한 사고가 발생한다. 우리는 케이블의 열화 상태를 감시하기 위한 장비를 개발하여 충남 태안의 한국서부발전주식회사(Korean Western Power Co. Ltd.)에 설치하였다. 이 논문에서, 운영 중에 있는 장비의 하드웨어적인 설계를 소개한다. 그 장비를 사용하여 고전력 케이블의 방식층 절연저항과 습도를 측정하였으며, 습도가 방식층의 절연저항에 미치는 영향을 분석한 결과를 제시한다.

• 한국방사선학회논문지
• /
• 제17권4호
• /
• pp.625-631
• /
• 2023

24시간/7일 동안 높은 관전압 하에서 높은 프레임 속도로 검사 대상체의 불량을 검사하는 산업용 동영상 엑스레이 디텍터의 중요한 요구사양은 높은 방사선 내구성을 확보하는 것이다. 본 연구는 비정질 실리콘 (a-Si), 다결정 실리콘 (Poly-Si), In-Ga-Zn-O 산화물 (IGZO) 등의 반도체 층을 갖는 다양한 박막트랜지스터를 제작하여 각각의 방사선 내구성을 확인하였다. a-Si TFT 대비 수십 배 높은 전계효과 이동도로 고속 동영상 구현이 가능한 IGZO TFT의 경우, IGZO 반도체 층과 층간절연막 사이에 수소화 처리를 진행할 경우 산업용 요구사양인 10,000 Gy 누선선량까지 엑스레이 영상센서로 적용 가능한 수준 이상으로 전기적 특성의 변화가 없음을 확인하였다. 따라서 수소화한 IGZO TFT는 방사선 내구성을 확보함과 동시에 높은 전계효과 이동도로 동영상 디텍터의 영상센서에 적용 가능한 유일한 소자임을 확인하였다.

• Journal of Electrical Engineering and Technology
• /
• 제12권2호
• /
• pp.820-829
• /
• 2017

Vegetable oil dielectrics have been used in transformers as green alternatives to mineral insulating oils for about twenty years, because of their advantages of non-toxic, biodegradability, and renewability. However, the viscosity of vegetable oils is more than 3 times of mineral oils, which means a poor heat dissipation capacity. To get low-viscosity dielectrics, transesterification and purification were performed to prepare vegetable oil methyl esters in this study. Electrical and physical properties were determined to investigate their potential as dielectrics. The results showed that the methyl ester products had good dielectric strengths, high water saturation and enough fire resistance. The viscosities (at $40^{\circ}C$) were 0.2 times less than FR3 fluid, and 0.7 times less than mineral oil, which indicated superior cooling capacity as we expected. With the assistance of 0.5 wt% pour point depressants, canola oil methyl ester exhibited the lowest pour point ($-26^{\circ}C$) among the products which was lower than FR3 fluid ($-21^{\circ}C$) and 25# mineral oil ($-23^{\circ}C$). Thus, canola oil methyl ester was the best candidate as a low-viscosity vegetable oil-based dielectric. The low-viscosity fluid could extend the service life of transformers by its better cooling capacity compared with nature ester dielectrics.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
• /
• pp.305-308
• /
• 2004

We present a novel process for the ultra low temperature (<150$^{\circ}C$) polycrystalline silicon (ULTPS) TFT for the flexible display applications on the plastic substrate. The sequential lateral solidification (SLS) was used for the crystallization of the amorphous silicon film deposited by rf magnetron sputtering, resulting in high mobility polycrystalline silicon (poly-Si) film. The gate dielectric was composed of thin $SiO_2$ formed by plasma oxidation and $Al_2O_3$ deposited by plasma enhanced atomic layer deposition. The breakdown field of gate dielectric on poly-Si film showed above 6.3 MV/cm. Laser activation reduced the source/drain resistance below 200 ${\Omega}$/ㅁ for n layer and 400 ${\Omega}$/ㅁ for p layer. The fabricated ULTPS TFT shows excellent performance with mobilities of 114 $cm^2$/Vs (nMOS) and 42 $cm^2$/Vs (pMOS), on/off current ratios of 4.20${\times}10^6$ (nMOS) and 5.7${\times}10^5$ (PMOS).

• Korea-Australia Rheology Journal
• /
• 제18권2호
• /
• pp.103-107
• /
• 2006

Organic-inorganic composite of polyaniline and barium titanate (PANI-$BaTiO_3$) was synthesized via an in-situ oxidation polymerization of aniline in the presence of barium titanate ($BaTiO_3$) nanoparticles dispersed in an acidic medium. Barium titanate has large electric resistance and relatively high dielectric constant which is one of the essential properties for its electrorheological (ER) applications. The microstructure and composition of the obtained PANI/$BaTiO_3$ composite were characterized by SEM, FT-IR and XRD. In addition, we also employed a rotational rheometer to investigate the rheological performance of the ER fluids based on both pure PANI particle and PANI/$BaTiO_3$ composite. It was found that the composite materials possess much higher yield stresses than the pristine PANI due to unique dielectric properties of the inorganic $BaTiO_3$ particles. Finally, we also examined dynamic yield stress by analyzing its extrapolated yield stress data as a function of electric field strengths. Using the critical electric field strengths deduced, we further found that the universal yield stress equation collapses their data onto a single curve.

• 한국재료학회지
• /
• 제16권3호
• /
• pp.151-156
• /
• 2006

A method for fabrication of nano-scale GaN structure by inductively coupled plasma etching is proposed, exploiting a thermal dewetting of Pt thin film as an etch mask. The nano-scale Pt metal islands were formed by the dewetting of 2-dimensional film on $SiO_2$ dielectric materials during rapid thermal annealing process. For the case of 30 nm thick Pt films, pattern formation and dewetting was initiated at temperatures greater $600^{\circ}C$. Controlling the annealing temperature and time as well as the thickness of the Pt metal film affected the size and density of Pt islands. The activation energy for the formation of Pt metal island was calculated to be 23.2 KJ/mole. The islands show good resistance to dry etching by a $CF_4$ based plasma for dielectric etching indicating that the metal islands produced by dewetting are suitable for use as an etch mask in the fabrication of nano-scale structures.

• 전기학회논문지
• /
• 제65권10호
• /
• pp.1780-1785
• /
• 2016

This paper presents few case studies of state diagnosis of XLPE cables using very low frequency techniques. The power cables of 22.9kV which have installation fault were assessed using VLF technique in addition to other techniques like insulation resistance and DC voltage withstand test. From the experimental results, The dielectric loss($tan{\delta}$) values of degradation of the cable(joint, knife, needle) at $U_0$ were 5.839, 5.526 and 6.251, respectively and all values were "further study advised". VLF PD measurement was also found defective portion. These method was effective in defect to fault in the degradation of the cable. However, the breakdown did not occur in the degradation of the cable because of properties of XLPE insulation. Few case studies of using VLF $tan{\delta}$ diagnosis for fault are measured and analyzed. The $tan{\delta}$ values at $U_0$ were "further study advised" or "action required".

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.186-189
• /
• 2006

The flexible organic thin film transistor (OTFT) array to use as a switching device for an organic light emitting diode (OLED) was designed and fabricated in the microcontact printing and room temperature process. The gate, source, and drain electrode patterns of OTFT were fabricated by microcontact printing process. The OTFT array with dielectric layer and organic active semiconductor layer formed at room temperature or at a temperature lower than $40^{\circ}C$. The microcontact printing process using SAM and PDMS stamp made it possible to fabricate OTFT arrays with channel lengths down to even submicron size, and reduced the fabrication process by 10 steps compared with photolithography. Since the process was done in room temperature, there was no pattern shrinkage, transformation, and bending problem appeared. Also, it was possible to improve electric field mobility, to decrease contact resistance, to increase close packing of molecules by SAM, and to reduce threshold voltage by using a big dielectric.

• E2M - 전기 전자와 첨단 소재
• /
• 제9권6호
• /
• pp.572-577
• /
• 1996

Alternating current and direct current of pure, ball milled, and $Al_{2}$O$_{3}$ added ZnO were investigated by means of complex impedance measurement and voltage-current source measurement unit. The electrical conductivity of A1$_{2}$O$_{3}$ added ZnO samples increases when the content of A1$_{2}$O$_{3}$ is used within 1 at% and decreases when it's used more than that. The increase and decrease of electrical conductivity seem to be the donor effect of $Al_{2}$O$_{3}$ and the increase of the number of ZnO grains, respectively. Impedance spectrum seems to be one semircicle. The size of semicircle increase with increasing the A1$_{2}$O$_{3}$ contents. The calculated dielectric constant(at 50.deg. C) were about 70-140 at the peak of the semicircle. The semicircles seem not to be the resistance of ZnO grain as compared to that of 10 for pure ZnO.