• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.1
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• pp.35-39
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• 2019

In this study, we investigated the optimum calcination temperature of lead-free $0.74(Bi_{0.5}Na_{0.5})TiO_3-0.26SrTiO_3$(BNST) piezoelectric ceramics by analyzing the crystal structure, dielectric properties, and electric field-induced strain behavior. BNST ceramics prepared by conventional solid-state reaction methods at various calcination temperatures according to the industrial standard. All samples of BNST ceramics were subsequently sintered at $1,175^{\circ}C$ for 2 h. Crystal structure classification of the ceramics showed a single perovskite phase, with no second phase detectable for the samples calcined at $750^{\circ}C$ or higher. BNST samples calcined at $850^{\circ}C$ exhibited the most optimal values for itsand the common physical parameters of $density=5.518g/cm^3$, ${\varepsilon}=1,871.837$, $tan{\delta}=0.047$, and ${d_{33}}^*=874pm/V$.

• Korean Journal of Materials Research
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• v.29 no.8
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• pp.463-468
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• 2019

The electrical and interfacial properties of $HfO_2/Al_2O_3$ and $Al_2O_3/HfO_2$ dielectrics on AlN/p-Ge interface prepared by thermal atomic layer deposition are investigated by capacitance-voltage(C-V) and current-voltage(I-V) measurements. In the C-V measurements, humps related to mid-gap states are observed when the ac frequency is below 100 kHz, revealing lower mid-gap states for the $HfO_2/Al_2O_3$ sample. Higher frequency dispersion in the inversion region is observed for the $Al_2O_3/HfO_2$ sample, indicating the presence of slow interface states A higher interface trap density calculated from the high-low frequency method is observed for the $Al_2O_3/HfO_2$ sample. The parallel conductance method, applied to the accumulation region, shows border traps at 0.3~0.32 eV for the $Al_2O_3/HfO_2$ sample, which are not observed for the $Al_2O_3/HfO_2$ sample. I-V measurements show a reduction of leakage current of about three orders of magnitude for the $HfO_2/Al_2O_3$ sample. Using the Fowler-Nordheim emission, the barrier height is calculated and found to be about 1.08 eV for the $HfO_2/Al_2O_3$ sample. Based on these results, it is suggested that $HfO_2/Al_2O_3$ is a better dielectric stack than $Al_2O_3/HfO_2$ on AlN/p-Ge interface.

• Journal of Advanced Navigation Technology
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• v.23 no.2
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• pp.172-178
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• 2019

This paper has designed, fabricated, and analyzed the passive devices realized using low temperature co-fired ceramic (LTCC) multi layer substrates by dividing into the shrinkage process and the non-shrinkage process. Using two types of ceramic materials with dielectric constant 7 or 40, we have fabricated the same shape of various elements in 2 different processes and compared the characteristics. For the substrate of dielctric constant 40, compared with the shrinkage process which has 17% shrink in the X and Y directions with 36% shrink in the Z direction, the non-shrinkage process has 43% shrink in the Z direction without shrink in the X and Y directions, so high dimensional accuracy and surface flatness can be obtained. The inductances and capacitances of the fabricated elements are estimated from measurement using empirical analysis equations of parameters and implemented as a design library. Depending on the substrate and the process, the inductance and capacitance depending on the turn number of winding and unit area have been measured, and empirical polynomials are proposed to predict element values.

• Progress in Superconductivity and Cryogenics
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• v.23 no.3
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• pp.51-54
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• 2021

The DC system has less power loss compared to the AC system because there is no influence of frequency and dielectric loss. However, the zero-crossing point of the current is not detected in the event of a short circuit fault, and it is difficult to interruption due to the large fault current that occurs during the opening, so the reliability of the DC breaker is required. As a solution to this, an LC resonance DC circuit breaker combined a superconducting element has been proposed. This is a method of limiting the fault current, which rises rapidly in case of a short circuit fault, with the quench resistance of the superconducting element, and interruption the fault current passing through the zero-crossing point through LC resonance. The superconducting current limiting element combined to the DC circuit breaker plays an important role in reducing the electrical burden of the circuit breaker. However, at the beginning of a short circuit fault, superconducting devices also have a large electrical burden due to large fault currents, which can destroy the element. In this paper, the reactor is connected to the source side of the circuit using PSCAD/EMTDC. After that, the change of the fault current according to the reactor capacity and the electrical burden of the superconducting element were confirmed through simulation. As a result, it was confirmed that the interruption time was delayed as the capacity of the reactor connected to the source side increased, but peak of the fault current decreased, the zero-crossing point generation time was shortened, and the electrical burden of the superconducting element decreased.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.21 no.1
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• pp.107-114
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• 2021

In this paper, a planar transistor oscillator for X-band using a newly proposed L-shaped monopole slot resonator is proposed. For planar design, an L-shaped monopole slot with an open-end is used as a resonator for a transistor oscillator. As a result of the simulated design of the resonator in three stages, a high Q value of 1169.84 and a high insertion loss of 49.934 dB were identified. The results of the final design and manufactured oscillator measurements confirmed that the oscillation output is greater than 7 dBm and has good phase noise characteristics of -58 dBc/Hz at 100 kHz offset. The proposed oscillator is planar and has the advantage of being directly applicable to microwave integrated circuit technology. It also has the advantage of being able to reduce its size as it can only be implemented in microstrip form without additional devices such as metal cavities and tuning screws in 3D structures, as in the case of a DRO (dielectric resonance oscillator).

• Journal of Advanced Navigation Technology
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• v.25 no.3
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• pp.223-228
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• 2021

In this paper, we proposed a slot-type antenna with microstrip feed embedded in a PCB for Zigbee communication (2.4 ~ 2.484 GHz). The proposed antenna is designed on a FR-4 substrate with dielectric constant 4.3, thickness of 1.6 mm, and size of 50×65 mm². Through simulations, trends of design parameters are analyzed and optimized, and the proposed antenna composed with three slots satisfy the frequency band. The measured impedance bandwidths (|S₁₁| ≤ -10 dB) of fabricated antenna are 900 MHz (2 ~ 2.9 GHz) in Zigbee frequency band. In addition, the radiation pattern showed omnidirectional characteristics for E and H-planes, and the gain of antenna in Zigbee frequency band was 1.782 dBi.

• The Journal of Korean Institute of Information Technology
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• v.17 no.3
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• pp.43-50
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• 2019

In this paper, we propose a S-band oscillator with a reduced electrical size by applying a vertical split ring resonator(VSRR). The VSRR is a type of split ring resonator that operates as a resonator by the capacitance and inductance generated between the microstrip lines arranged on the top and bottom of the dielectric substrate and it has an advantage that the electrical size of the resonance circuit can be reduced as compared with the conventional ring resonator. In this paper, we design a VSRR operating over S-band and an oscillator using the VSRR as the resonant circuit. The proposed oscillator showed the output of 5.9dBm at 2.4HGz and showed the phase noise characteristics of -112.58dBc at 100KHz offset frequency and -117.85dBc at 1MHz offset.

• Journal of Advanced Navigation Technology
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• v.24 no.6
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• pp.573-580
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• 2020

In this paper, the characteristics of the inductor and capacitor, which are the basic components of the circuit, are constructed in a form that can be used in the LTCC multilayer. The inductors and capacitors used for the analysis were designed with rectangular spiral structures and MIM structures inside dielectrics with a dielectric constant of 7, respectively. The measured results were extracted from each element of the equivalent circuit proposed by the curve fitting method and verified the validity of the proposed equivalent circuit based on the extracted results. The analyzed inductor and capacitor were implemented in the form of library and proved its usefulness by applying to Elliptical type 5th LPF design. The LPF was measured through practical production, and as a result, the insertion loss in the passband DC ~ 3.7 GHz was up to 1.0 dB, the return loss was 19.2 dB, and the attenuation in the rejection band was 23.9 dB, which was close to the design goal.

• The Journal of the Convergence on Culture Technology
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• v.7 no.3
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• pp.463-468
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• 2021

In this paper, when a refractive index grating and a gain grating were simultaneously present in a DFB laser having a wavelength of 1.55 ㎛, a dielectric film coating was applied so that reflection did not occur on the right mirror surface, so that 𝜌_r=0. In case of 𝛿L>0, the characteristics of the oscillation frequency and oscillation gain were analyzed. When the grating phase of the left mirror surface continues to decrease from 𝜋, the graph lines of each mode gradually shift to the left. In case of 𝜅L=10, the threshold gain of the oscillation mode is the lowest. In this case, the mode selectivity is relatively low. From 𝜅L=0.5 to 𝜅L=6, the mode selectivity and the frequency stability are excellent. In the case of DFB lasers with an anti-reflection coated mirror, the threshold gain of the oscillation mode increases but the mode selectivity is about twice as excellent, compared with DFB lasers of having two cleaved facets.

• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.5
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• pp.759-766
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• 2022

In this paper, we propose a multi-band small antenna with CPW(Coplanar Waveguide) feeding structure WLAN(Wireless Local Area Network) and WiMAX (Worldwide Interoperability for Microwave Access) bands. The proposed antenna is designed two slit in the modified monopole type radiator and FR-4 substrate, which is thickness 1.0 mm, and the dielectric constant is 4.4. The size of proposed antenna is 15.1 mm⨯16.41 mm, and total size of proposed antenna is 17.5 mm⨯16.4 mm. From the fabrication and measurement results, From the fabrication and measurement results, bandwidths of 439 MHz (2.06 to 2.499 GHz), 840 MHz (3.31 to 4.25) and 1,315 MHz (5.23 to 6.545 GHz) were obtained on the basis of -10 dB impedance bandwidth. Also, 3D radiation pattern characteristics of the proposed antenna are displayed and measured gains 2.24 dBi, 2.83 dBi, and 2.0 dBi shown in the three frequency band, respectively.