• 대한의용생체공학회:의공학회지
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• 제44권2호
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• pp.99-108
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• 2023

According to the COVID-19, development of various medical software based on IoT(Internet of Things) was accelerated. Especially, interest in a central software system that can remotely monitor and control ventilators is increasing to solve problems related to the continuous increase in severe COVID-19 patients. Since medical device software is closely related to human life, this study aims to develop central monitoring system that can remotely monitor and control multiple ventilators in compliance with medical device software development standards and to verify performance of system. In addition, to ensure the safety and reliability of this central monitoring system, this study also specifies risk management requirements that can identify hazardous situations and evaluate potential hazards and confirms the implementation of cybersecurity to protect against potential cyber threats, which can have serious consequences for patient safety. As a result, we obtained medical device software manufacturing certificates from MFDS(Ministry of Food and Drug Safety) through technical documents about performance verification, risk management and cybersecurity application.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.237-238
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• 2008

본 연구에서는 APD 소자 제작시 주로 쓰이는 RTA에 의한 Zn 확산방법에 사용할 경우 undoped InP의 V/III비율에 따른 Zn원자의 확산, 도핑, 오믹저항의 성장을 조사하였다. RTA에 의한 확산 및 활성화 열처리 시 도핑 농도의 프로파일은 확산열처리만 한 경우보다 활성화 처리한 경우 더 커짐을 볼 수 있었다. SIMS 결과 활성화 처리 후 표면쪽에 Zn원자의 약간의 결핍현상을 보이는 데 이는 표면쪽에 Zn원자의 탈착이 약간 이루어지는 것으로 보인다. 이 원인은 결과적으로 오믹저항의 증가를 가져왔다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권1호
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• pp.66-77
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• 2010

Improvement in breakdown voltage ($BV_{ds}$) and speed of the device are the key issues among the researchers for enhancing the performance of HEMT. Increased speed of the device aspires for shortened gate length ($L_g$), but due to lithographic limitation, shortening $L_g$ below sub-micrometer requires the inclusion of various metal-insulator geometries like T-gate onto the conventional architecture. It has been observed that the speed of the device can be enhanced by minimizing the effect of upper gate electrode on device characteristics, whereas increase in the $BV_{ds}$ of the device can be achieved by considering the finite effect of the upper gate electrode. Further, improvement in $BV_{ds}$ can be obtained by applying field plates, especially at the drain side. The important parameters affecting $BV_{ds}$ and cut-off frequency ($f_T$) of the device are the length, thickness, position and shape of metal-insulator geometry. In this context, intensive simulation work with analytical analysis has been carried out to study the effect of variation in length, thickness and position of the insulator under the gate for various metal-insulator gate geometries like T-gate, $\Gamma$-gate, Step-gate etc., to anticipate superior device performance in conventional HEMT structure.

• 한국정보통신학회논문지
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• 제27권1호
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• pp.97-102
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• 2023

IoT는 전통적인 정보 서비스뿐만 아니라 다양한 분야에서 활용되고 있다. 특히 스마트 홈, 스마트 해양, 스마트 에너지나 스마트 팜 등 많은 융합 IT 분야에서 IoT 기술을 활용하고 있다. IoT 기반 정보 서비스의 서버에 대하여, 지정된 프로토콜을 사용하는 IoT 단말은 신뢰된 객체이다. 그래서 악의적 공격자는 인가되지 않은 IoT device를 사용하여 IoT 기반 정보 서비스 접근, 인가되지 않은 중요 정보에 접근 후 이를 변조하거나 외부에 유출할 수 있다. 본 연구에서는 이러한 문제점을 개선하기 위하여 IoT 기반 정보 서비스에서 사용하는 IoT 단말 인증 시스템을 제안한다. 본 연구에서 제안하는 IoT 단말 인증 시스템은 MAC address 등의 식별자 기반 인증을 적용한다. 본 연구에서 제안하는 IoT 단말 인증 기능을 사용하면, 인증된 IoT 단말만 서버에 접근할 수 있다. 본 연구는 비인가 IoT 단말의 세션을 종료하는 방식을 적용하므로, 보다 안전한 단말 인증 방식인 접근 차단에 대한 추가연구가 필요하다.

• 한국전자통신학회논문지
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• 제15권6호
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• pp.1113-1122
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• 2020

최근 묻지마식의 강력범죄가 계속 일어나면서 여성 및 노약자들의 피해가 심각해지고 있다. 기존 시스템으로는 CCTV는 많이 설치되어 있으나 범죄가 일어난 후 사후 조치에 그쳐 범죄를 예방하기에는 어려움이 많이 발생하고 있는 바 아파트나 빌딩등 음영지역과 폐쇄 공간등에서의 사건 사고를 본 장치를 통하여 범죄를 방지하고자 본 기술을 연구하여 제품과 소프트웨어를 개발한다. 범죄로 예상되는 행위,행동의 움직임의 특정 대상을 영상분석 빅데이터 기술과 융합 센서 기술을 이용하여 운영되고 있는 CCTV 장치 혹은 경보의 이벤트를 받고자 하는 특정장소에 통신기술을 이용하여 경보 신호를 보내주는 장치 개발한다. 본 개발 장치는 범죄 발생을 사전에 예측하여 실시간으로 범죄발생을 경보 신호로 처리하여 전송해주는 장치로 사용되는 소비자들에게 본 장치를 연구 개발하여 저가의 장치를 공급하며 단독형 장치와 서버를 구성하여 연결되는 장치를 제공하게 된다.

• Transactions on Control, Automation and Systems Engineering
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• 제4권1호
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• pp.9-16
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• 2002

In this paper, we intend to demonstrate a new intuitive force-feedback device for advanced VR applications. Force feed-back for the device is tension based and is characterized by 7 degrees of freedom (DOF); 3 DOF for translation, 3 DOF for rotation, and 1 DOF for grasp). The SPIDAR-G (Space Interface Device for Artificial Reality with Grip) will allow users to interact with virtual objects naturally by manipulating two hemispherical grips located in the center of the device frame. We will show how to connect the strings between each vertex of grip and each extremity of the frame in order to achieve force feedback. In addition, methodologies will be discussed for calculating translation, orientation and grasp using the length of 8 strings connected to the motors and encoders on the frame. The SPIDAR-G exhibits smooth force feedback, minimized inertia, no backlash, scalability and safety. Such features are attributed to strategic string arrangement and control that results in stable haptic rendering. The design and control of the SPIDAR-G will be described in detail and the Space Graphic User Interface system based on the proposed SPIDAR-G system will be demonstrated. Experimental results validate the feasibility of the proposed device and reveal its application to virtual reality.

• 대한임베디드공학회논문지
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• 제7권2호
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• pp.95-101
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• 2012

In order to supply emotion service depending on user's emotional change in a mobile environment, various researches have been carried. This paper discusses a protocol for wireless charging and an embedded platform of the mobile emotional sensing device which supports that. Wireless charging process relieves user's vexatious task to charge the emotional sensing device. To support wireless charging, there are one basestation and several mobile devices. Basestation coordinates and controls the devices over wireless communication, as well as supplies energy. For 1:N communication we defines the network whose superframe is classified into four categories: a network join superframe, a charging request superframe, a charging superframe and an inactive superframe. Physical layer provides how to supply energy to the devices and communicate physically. Mobile device is equipped with energy charged circuits, which correspond with the defined energy supplying method, as well as bidirectional communication circuits. Mobile device monitors and analyzes its own battery status, and is able to send a request packet to basestation. Therefore, it can be charged before its battery is exhausted without user's perception.

• Journal of Korean Neurosurgical Society
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• 제59권3호
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• pp.322-324
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• 2016

To introduce a new device for catheter placement of an external ventricular drain (EVD) of cerebrospinal fluid (CSF). This device was composed of three portions, T-shaped main body, rectangular pillar having a central hole to insert a catheter and an arm pointing the tragus. The main body has a role to direct a ventricular catheter toward the right or left inner canthus and has a shallow longitudinal opening to connect the rectangular pillar. The arm pointing the tragus is controlled by back and forth movement and turn of the pillar attached to the main body. Between April 2012 and December 2014, 57 emergency EVDs were performed in 52 patients using this device in the operating room. Catheter tip located in the frontal horn in 52 (91.2%), 3rd ventricle in 2 (3.5%) and in the wall of the frontal horn of the lateral ventricle in 3 EVDs (5.2%). Small hemorrhage along to catheter tract occurred in 1 EVD. CSF was well drained through the all EVD catheters. The accuracy of the catheter position and direction using this device were 91% and 100%, respectively. This device for EVD guides to provide an accurate position of catheter tip safely and easily.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권10호
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• pp.469-475
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• 2003

Resistive leakage current flowing ZnO blocks increases with its ages, which is an important indicator of arrester deterioration. However, a complicated circuitry is essential to measure the resistive leakage current included in the total leakage current, and the difficult handling of the measurement makes few applications to the fields. In this paper, we propose a resistive leakage current measurement device which is composed of a current detection circuit and an analysis program operated on a microprocessor. The device samples the input leakage current waveform digitally, and discriminate the zero-cross and the peak point of the waveform to analyze the current amplitude vs. phase. The capacitive leakage current is then eliminated from the total leakage current by using an algorithm to extract the resistive leakage current only. Also, the device can be operated automatically and manually to analyze the resistive leakage current even when the leakage current waveform is distorted due to various types of arrester deterioration. To estimate the performance of the device, we carried out a test on ZnO blocks and lightning arresters. From the results, it is confirmed that the device could analyze most parameters needed for the arrester diagnostics such as total leakage current. resistive leakage current, and the $3^rd$ harmonic leakage current.

• 한국안전학회지
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• 제17권4호
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• pp.94-100
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• 2002

As the use of automatic handling equipment for sensitive semiconductor devices is rapidly increased, manufacturers of electronic components and equipments need to be more alert to the problem of electrostatic discharges(ESD). In order to analyze damage characteristics of semiconductor device damaged by ESD, this study adopts a new charged-device model(CDM), field-induced charged model(FCDM) simulator that is suitable for rapid, routine testing of semiconductor devices and provides a fast and inexpensive test that faithfully represents ESD hazards in plants. High voltage applied to the device under test is raised by the field of non-contacting electrodes in the FCDM simulator, which avoids premature device stressing and permits a faster test cycle. Discharge current and time are measured and calculated. The characteristics of electrostatic attenuation of domestic semiconductor devices are investigated to evaluate the ESD phenomena in the semiconductors. Also, the field charging mechanism, the device thresholds and failure modes are investigated and analyzed. The damaged devices obtained in the simulator are analyzed and evaluated by SEM. The results obtained in this paper can be used to prevent semiconductor devices form ESD hazards and be a foundation of research area and industry relevant to ESD phenomena.