Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.06a
- /
- Pages.237-238
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- 2008
Study on Ohmic resistance of Zn-doping InP using RTA method
RTA 방법에 의해 Zn 도핑된 InP의 오믹저항 특성연구
- Kim, H.J. (Photonic Device Team, Korea Photonics Technology Institute) ;
-
Kim, I.S.
(Photonic Device Team, Korea Photonics Technology Institute)
;
-
Kim, T.U.
(Photonic Device Team, Korea Photonics Technology Institute)
;
- Kim, S.T. (Photonic Device Team, Korea Photonics Technology Institute) ;
-
Kim, S.H
(Photonic Device Team, Korea Photonics Technology Institute)
;
-
Ki, H.C.
(Photonic Device Team, Korea Photonics Technology Institute)
;
- Lee, K.M. (Photonic Device Team, Korea Photonics Technology Institute) ;
- Yang, M.H. (Photonic Device Team, Korea Photonics Technology Institute) ;
-
Ko, H.J.
(Photonic Device Team, Korea Photonics Technology Institute)
;
-
Kim, H.J.
(Photonic Device Team, Korea Photonics Technology Institute)
- 김효진 (한국광기술원 광소자팀) ;
-
김인성
(한국광기술원 광소자팀)
;
-
김태언
(한국광기술원 광소자팀)
;
- 김상택 (한국광기술원 광소자팀) ;
-
김선훈
(한국광기술원 광소자팀)
;
-
기현철
(한국광기술원 광소자팀)
;
- 이경민 (한국광기술원 광소자팀) ;
- 양명학 (한국광기술원 광소자팀) ;
-
고항주
(한국광기술원 광소자팀)
;
-
김회종
(한국광기술원 광소자팀)
- Published : 2008.06.19
Abstract
Electrical properties of Pd/Zn/Pd/Au contacts to p-InP were investigated as function of the V/III ratio of p-InP. P-type InP was made by the Zn diffusion into InP and activation process with rapid thermal annealing (RTA) measurement. After activation, the hole concentration was two orders of magnitude higher than that of the sample having only diffusion process. According to transmission line method (TLM) results, the specific contact resistance of p-InP was lower as used InP having the lower V/III ratio. The experimental results represent that the diffusion of Zn in undoped InP deeply related to the equilibrium between interstitials and substitutional Zn is established via indium interstitials.
본 연구에서는 APD 소자 제작시 주로 쓰이는 RTA에 의한 Zn 확산방법에 사용할 경우 undoped InP의 V/III비율에 따른 Zn원자의 확산, 도핑, 오믹저항의 성장을 조사하였다. RTA에 의한 확산 및 활성화 열처리 시 도핑 농도의 프로파일은 확산열처리만 한 경우보다 활성화 처리한 경우 더 커짐을 볼 수 있었다. SIMS 결과 활성화 처리 후 표면쪽에 Zn원자의 약간의 결핍현상을 보이는 데 이는 표면쪽에 Zn원자의 탈착이 약간 이루어지는 것으로 보인다. 이 원인은 결과적으로 오믹저항의 증가를 가져왔다.