• Journal of Biomedical Engineering Research
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• v.44 no.2
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• pp.99-108
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• 2023

According to the COVID-19, development of various medical software based on IoT(Internet of Things) was accelerated. Especially, interest in a central software system that can remotely monitor and control ventilators is increasing to solve problems related to the continuous increase in severe COVID-19 patients. Since medical device software is closely related to human life, this study aims to develop central monitoring system that can remotely monitor and control multiple ventilators in compliance with medical device software development standards and to verify performance of system. In addition, to ensure the safety and reliability of this central monitoring system, this study also specifies risk management requirements that can identify hazardous situations and evaluate potential hazards and confirms the implementation of cybersecurity to protect against potential cyber threats, which can have serious consequences for patient safety. As a result, we obtained medical device software manufacturing certificates from MFDS(Ministry of Food and Drug Safety) through technical documents about performance verification, risk management and cybersecurity application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.237-238
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• 2008

Electrical properties of Pd/Zn/Pd/Au contacts to p-InP were investigated as function of the V/III ratio of p-InP. P-type InP was made by the Zn diffusion into InP and activation process with rapid thermal annealing (RTA) measurement. After activation, the hole concentration was two orders of magnitude higher than that of the sample having only diffusion process. According to transmission line method (TLM) results, the specific contact resistance of p-InP was lower as used InP having the lower V/III ratio. The experimental results represent that the diffusion of Zn in undoped InP deeply related to the equilibrium between interstitials and substitutional Zn is established via indium interstitials.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.1
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• pp.66-77
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• 2010

Improvement in breakdown voltage ($BV_{ds}$) and speed of the device are the key issues among the researchers for enhancing the performance of HEMT. Increased speed of the device aspires for shortened gate length ($L_g$), but due to lithographic limitation, shortening $L_g$ below sub-micrometer requires the inclusion of various metal-insulator geometries like T-gate onto the conventional architecture. It has been observed that the speed of the device can be enhanced by minimizing the effect of upper gate electrode on device characteristics, whereas increase in the $BV_{ds}$ of the device can be achieved by considering the finite effect of the upper gate electrode. Further, improvement in $BV_{ds}$ can be obtained by applying field plates, especially at the drain side. The important parameters affecting $BV_{ds}$ and cut-off frequency ($f_T$) of the device are the length, thickness, position and shape of metal-insulator geometry. In this context, intensive simulation work with analytical analysis has been carried out to study the effect of variation in length, thickness and position of the insulator under the gate for various metal-insulator gate geometries like T-gate, $\Gamma$-gate, Step-gate etc., to anticipate superior device performance in conventional HEMT structure.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.27 no.1
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• pp.97-102
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• 2023

IoT is being used in a lot of industry domain such as smart home, smart ocean, smart energy, and smart farm, as well as legacy information services. For a server, an IoT device using the same protocol is a trusted object. Therefore, a malicious attacker can use an unauthorized IoT device to access IoT-based information services and access unauthorized important information, and then modify or extract it to the outside. In this study, to improve these problems, we propose an IoT device authentication system used in IoT-based information service. The IoT device authentication system proposed in this study applies identifier-based authentication such as MAC address. If the IoT device authentication function proposed in this study is used, only the authenticated IoT device can access the server. Since this study applies a method of terminating the session of an unauthorized IoT device, additional research on the access deny method, which is a more secure authentication method, is needed.

• The Journal of the Korea institute of electronic communication sciences
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• v.15 no.6
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• pp.1113-1122
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• 2020

Recently, as violent crimes of crime without reason (Korea : Do not ask), women and the elderly are getting serious. In the existing system, many CCTVs are installed, but it is difficult to prevent crime due to only follow-up measures after a crime occurs. This device prevents crime through this device for incidents in shaded areas and closed spaces such as apartments and buildings. To do this, we research this technology to develop products and software. It sends an alarm signal using communication technology to a specific place where you want to receive an event of an alarm or a CCTV device operated using image analysis big data technology and convergence sensor technology for a specific target of the behavior expected to be a crime or movement. Develop the device. This development device researches and develops this device and supplies low-cost devices to consumers, which is used as a device that predicts the occurrence of crime in advance, processes it as an alarm signal in real time, and transmits it, and constitutes a standalone device and a server. Will provide the device to be connected.

• Transactions on Control, Automation and Systems Engineering
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• v.4 no.1
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• pp.9-16
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• 2002

In this paper, we intend to demonstrate a new intuitive force-feedback device for advanced VR applications. Force feed-back for the device is tension based and is characterized by 7 degrees of freedom (DOF); 3 DOF for translation, 3 DOF for rotation, and 1 DOF for grasp). The SPIDAR-G (Space Interface Device for Artificial Reality with Grip) will allow users to interact with virtual objects naturally by manipulating two hemispherical grips located in the center of the device frame. We will show how to connect the strings between each vertex of grip and each extremity of the frame in order to achieve force feedback. In addition, methodologies will be discussed for calculating translation, orientation and grasp using the length of 8 strings connected to the motors and encoders on the frame. The SPIDAR-G exhibits smooth force feedback, minimized inertia, no backlash, scalability and safety. Such features are attributed to strategic string arrangement and control that results in stable haptic rendering. The design and control of the SPIDAR-G will be described in detail and the Space Graphic User Interface system based on the proposed SPIDAR-G system will be demonstrated. Experimental results validate the feasibility of the proposed device and reveal its application to virtual reality.

• IEMEK Journal of Embedded Systems and Applications
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• v.7 no.2
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• pp.95-101
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• 2012

In order to supply emotion service depending on user's emotional change in a mobile environment, various researches have been carried. This paper discusses a protocol for wireless charging and an embedded platform of the mobile emotional sensing device which supports that. Wireless charging process relieves user's vexatious task to charge the emotional sensing device. To support wireless charging, there are one basestation and several mobile devices. Basestation coordinates and controls the devices over wireless communication, as well as supplies energy. For 1:N communication we defines the network whose superframe is classified into four categories: a network join superframe, a charging request superframe, a charging superframe and an inactive superframe. Physical layer provides how to supply energy to the devices and communicate physically. Mobile device is equipped with energy charged circuits, which correspond with the defined energy supplying method, as well as bidirectional communication circuits. Mobile device monitors and analyzes its own battery status, and is able to send a request packet to basestation. Therefore, it can be charged before its battery is exhausted without user's perception.

• Journal of Korean Neurosurgical Society
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• v.59 no.3
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• pp.322-324
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• 2016

To introduce a new device for catheter placement of an external ventricular drain (EVD) of cerebrospinal fluid (CSF). This device was composed of three portions, T-shaped main body, rectangular pillar having a central hole to insert a catheter and an arm pointing the tragus. The main body has a role to direct a ventricular catheter toward the right or left inner canthus and has a shallow longitudinal opening to connect the rectangular pillar. The arm pointing the tragus is controlled by back and forth movement and turn of the pillar attached to the main body. Between April 2012 and December 2014, 57 emergency EVDs were performed in 52 patients using this device in the operating room. Catheter tip located in the frontal horn in 52 (91.2%), 3rd ventricle in 2 (3.5%) and in the wall of the frontal horn of the lateral ventricle in 3 EVDs (5.2%). Small hemorrhage along to catheter tract occurred in 1 EVD. CSF was well drained through the all EVD catheters. The accuracy of the catheter position and direction using this device were 91% and 100%, respectively. This device for EVD guides to provide an accurate position of catheter tip safely and easily.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.469-475
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• 2003

Resistive leakage current flowing ZnO blocks increases with its ages, which is an important indicator of arrester deterioration. However, a complicated circuitry is essential to measure the resistive leakage current included in the total leakage current, and the difficult handling of the measurement makes few applications to the fields. In this paper, we propose a resistive leakage current measurement device which is composed of a current detection circuit and an analysis program operated on a microprocessor. The device samples the input leakage current waveform digitally, and discriminate the zero-cross and the peak point of the waveform to analyze the current amplitude vs. phase. The capacitive leakage current is then eliminated from the total leakage current by using an algorithm to extract the resistive leakage current only. Also, the device can be operated automatically and manually to analyze the resistive leakage current even when the leakage current waveform is distorted due to various types of arrester deterioration. To estimate the performance of the device, we carried out a test on ZnO blocks and lightning arresters. From the results, it is confirmed that the device could analyze most parameters needed for the arrester diagnostics such as total leakage current. resistive leakage current, and the $3^rd$ harmonic leakage current.

• Journal of the Korean Society of Safety
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• v.17 no.4
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• pp.94-100
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• 2002

As the use of automatic handling equipment for sensitive semiconductor devices is rapidly increased, manufacturers of electronic components and equipments need to be more alert to the problem of electrostatic discharges(ESD). In order to analyze damage characteristics of semiconductor device damaged by ESD, this study adopts a new charged-device model(CDM), field-induced charged model(FCDM) simulator that is suitable for rapid, routine testing of semiconductor devices and provides a fast and inexpensive test that faithfully represents ESD hazards in plants. High voltage applied to the device under test is raised by the field of non-contacting electrodes in the FCDM simulator, which avoids premature device stressing and permits a faster test cycle. Discharge current and time are measured and calculated. The characteristics of electrostatic attenuation of domestic semiconductor devices are investigated to evaluate the ESD phenomena in the semiconductors. Also, the field charging mechanism, the device thresholds and failure modes are investigated and analyzed. The damaged devices obtained in the simulator are analyzed and evaluated by SEM. The results obtained in this paper can be used to prevent semiconductor devices form ESD hazards and be a foundation of research area and industry relevant to ESD phenomena.