• 제목/요약/키워드: Device withstand voltage

검색결과 9건 처리시간 0.036초

협조된 SPD시스템에서 접속선의 길이가 에너지협조에 미치는 영향 (Influences of the Length of Connecting Leads on the Energy Coordination in Coordinated SPD Systems)

  • 이복희;신희경
    • 조명전기설비학회논문지
    • /
    • 제28권6호
    • /
    • pp.91-98
    • /
    • 2014
  • For the purpose of designing and applying the optimum surge protection scheme, multi-stage coordinated surge protective device(SPD) system is suitable to successfully fulfill its tasks; first, to divert a large amount of the transient energy, second, to clamp the overvoltage to the level below the withstand impulse voltage of the equipment to be protected. The length of SPD connecting leads shall be as short as possible. Long connecting leads will degrade the protection effect of SPDs. In this paper, the influences of the length of connecting leads on the energy sharing in a coordinated SPD system were investigated experimentally, and the simulation of determining the energy sharing and protection voltage level of each SPD depending on the length of connecting leads was carried out by using P-spice program. It was confirmed that the protection voltage level and energy sharing in coordinated SPD systems are strongly influenced by the length of connecting leads.

전지관리장치(BMS)의 서지내성 성능향상 기법 (Surge Immunity Performance Enhancement Techniques on Battery Management System)

  • 김용성;임성정;서우현;정중일
    • 전기학회논문지
    • /
    • 제64권1호
    • /
    • pp.196-200
    • /
    • 2015
  • The switching noise in the power electronics of the power conversion equipment (Power Conditioning System) for large energy storage devices are generated. Since the burst-level transient noise from being generated in the power system at a higher power change process influences the control circuit of the low voltage driver circuit. Noise may cause the malfunction of the control device even if no dielectric breakdown leads to a control circuit. To overcome this, this paper proposes the installation of an additional nano-surge protection device on the power supply DC output circuit of the battery management unit.

개폐 충격전압 측정용 쉴드 저항분압기의 직각파 특성에 관한 연구 (A Study on the Step Response Characteristics in Shielded Resistor Divider for Switching Impulse Voltage)

  • 김익수;이형호;조정수;박정후
    • 대한전기학회논문지:전기물성ㆍ응용부문C
    • /
    • 제48권12호
    • /
    • pp.777-784
    • /
    • 1999
  • Since the ultra-high voltage power apparatus are recommended to withstand switching surge generated from the electric power system, the switching impulse voltage is generally used to verify this requirement at the testing laboratories. Recently, the international standard(IEC 60060-2) related to the high voltage measurement techniques is revised requiring a traceability of measuring system for high voltage measurements. In this paper, a reference divider for switching impulse voltage is developed satisfying the revised. IEC standard and the possibility of applications has been investigated. Therefore, the characteristics of the high and low voltage side resistor and the shielding ring have been analyzed including the step response characteristics of the prototype divider. Throughout various efforts, it is confirmed that our measuring device has shown compatible characteristics as a reference divider.

  • PDF

고전압 Field Stop IGBT의 최적화 설계에 관한 연구 (The Optimal Design of High Voltage Field Stop IGBT)

  • 안병섭;장란향;류용;강이구
    • 한국전기전자재료학회논문지
    • /
    • 제28권8호
    • /
    • pp.486-489
    • /
    • 2015
  • Power semiconductor device has a very long history among semiconductor, since the invention of low-pressure bipolar transistor 1947, and so far from small capacity to withstand voltage-current, high-speed and high-frequency characteristics have been developed with high function. In this study, the PWM IC Switch to the main parts used in IGBT (insulated gate bipolar transistor) for the low power loss and high drive capability of the simulator to Synopsys' T-CAD used by the 1,700 V NPT Planar IGBT, 1,700 V FS was a study of the Planar IGBT, the results confirmed that IGBT 1,700 V FS Planar is making about 11 percent less than the first designed NPT Planar IGBT.

보호거리와 부하 유형에 따른 SPD의 보호효과에 대한 실험적 고찰 (Experimental Examinations on Protective Effects of SPDs Associated with the Protective Distance and Type of Load)

  • 이복희;김유하;안창환
    • 조명전기설비학회논문지
    • /
    • 제26권10호
    • /
    • pp.81-88
    • /
    • 2012
  • Surge protective devices(SPDs) are widely used as a most effective means protecting the electrical and electronic equipment against overvoltages such as lightning and switching surges. When installing SPDs, it is essential that the voltage protection level provided by SPDs should be lower than the withstand voltage of the equipment being protected. But even the proper selection of SPDs are achieved, the voltage at the equipment terminal may be higher than the residual voltage of SPD due to the reflection and oscillation phenomena. This paper was focused on the investigations of the conditions for which the equipment is protected by an SPD taking into account the influences of the protective distance and type of load. The protective effects of SPD with voltage-limiting component were analyzed as functions of types of load and protective distance between the SPD and load. As a result, in the cases of long protective distances, capacitive loads and loads with high resistance, the voltage at the load terminal was significantly higher than the residual voltage of SPD. It was found that the proper installation of SPDs should be carried out by taking into account the protective distance and type of load to achieve reliable protection of electronic equipments against surges.

ZnO 세라믹 바리스터의 미세구조에 미치는 $TiO_2$의 영향 (Influence of $TiO_2$ Addition on Microstructure of ZnO Ceramic Varistor)

  • 소병문;홍진웅
    • 한국전기전자재료학회논문지
    • /
    • 제11권3호
    • /
    • pp.214-220
    • /
    • 1998
  • ZnO varistors are characterized by the features of excellent nonlinearity and surge withstand capability. In this paper, in order to investigate the use of ZnO varistor as surge absorption device in low voltage, metal oxide material($TiO_2$) was selected as control material of grain growth. Samples of ZnO varistors were fabricated with varying the contents, and then the microstructures and V-I characteristics were measured. It was observed by SEM that the mean grain size increased with the increase of the additive. From the measurement of V-I characteristics, it was observed that according to the increase of the quantity of $TiO_2$ as additive, the operating voltage was lowered.

  • PDF

송전선로용 고전압 절연체의 최적 형상에 대한 유한요소 해석 (Finite Element Analysis for the Optimal Shape of the High Voltage Insulator for Power Transmission Lines)

  • 김태용;산얄 심피;라벨로 마데우스;이준신
    • 한국전기전자재료학회논문지
    • /
    • 제35권1호
    • /
    • pp.66-71
    • /
    • 2022
  • The insulator used for the transmission line is a device that is bonded with a cap, pin, ceramic, and cement to withstand insulation capacity and mechanical load. The insulator design can help to reduce the dispersion of the electric field; thus, the optimization of today's design, especially as demanded power grows, is critical. The designs of four manufacturers were used to perform a comparative analysis. Under dry circumstances of the new product, an electric field distribution study was done with no pollutants attached. Manufacturer D's design has the best voltage uniformity of 24.33% and the arc length of 500 mm or more. Manufacturer C's design has an equalizing voltage of more than 2% higher than that of other manufacturers. The importance of the design of the insulator and the number of connections according to the installation conditions is very efficient for transmission lines that will increase in the future.

초전도 한류기 투입 위치에 따른 TRV 영향 분석 (Analysis of a TRV influence according to application position of a SFCL)

  • 방승현;이상봉;김철환;김재철;현옥배
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 2008년도 제39회 하계학술대회
    • /
    • pp.91-92
    • /
    • 2008
  • The rating of a circuit breaker depends not only on the interrupting current but also on a transient recovery voltage (TRV). To achieve a successful interruption, the circuit breaker must withstand the TRV. A superconducting fault current limiter (SFCL) is a device that limits the fault current fast and effectively without having high impedance during normal operation of the power system. Therefore, we studied the influence of the TRV according to the application of a resistive type SFCL in distribution system. This paper analyses the influence of the TRV for various application position of the resistive SFCL. The distribution system and the resistive SFCL were modeled by using EMTP-RV (Electromagnetic Transient Program - Restructured Version)

  • PDF

과냉질소 냉각시스템 가압용 기체의 절연내력특성 분석 (Analysis on the Dielectric Characteristics of Various Insulation Gases for Developing a Sub-cooled Liquid Nitrogen Cooling System)

  • 강형구;고태국
    • 한국초전도ㆍ저온공학회논문지
    • /
    • 제13권1호
    • /
    • pp.27-30
    • /
    • 2011
  • A sub-cooled liquid nitrogen cooling system is known as a most promising method to develop large scale superconducting apparatuses such as superconducting fault current limiters and superconducting cables [1]. Gaseous helium (GHe), gaseous nitrogen ($GN_2$) and sulfur hexafluoride ($SF_6$) are commonly used for designing an high voltage applied superconducting device as an injection gaseous medium [2, 3]. In this paper, the analysis on the dielectric characteristics of GHe, $GN_2$ and $SF_6$ are conducted by designing and manufacturing sphere-to-plane electrode systems. The AC withstand voltage experiments on the various gaseous insulation media are carried out and the results are analyzed by using finite element method (FEM) considering field utilization factors (${\xi}$). It is found that the electric field intensity at sparkover ($E_{MAX}$) of insulation media exponentially decreases according to ${\xi}$ increases. Also, the empirical expressions of the functional relations between $E_{MAX}$ and ${\xi}$ of insulation media are deduced by dielectric experiments and computational analyses. It is expected that the electrical insulation design of applied superconducting devices could be performed by using the deduced empirical formulae without dielectric experiments.