• Journal of the Korean Society for Precision Engineering
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• v.12 no.1
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• pp.132-141
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• 1995

This paper presents a choosing method of turning devices for stable robotic assembly based on verification of a base assembly motion instability. In flexible assembly application, the base assembly needs to be maintained in its assembled state without being taken apart. Therefore, the instability of the base assembly motion should be considered when determining the guide line of choosing turning devices by evaluating a degree of the motion instability of the base assembly. To derive the instability, first we inference collision free assembly directions by extracting separable directions for the mating parts and calculate the separability which gives informations as to how the parts can be essily separated. Using these results, we determine the instability evaluated by summing all the modified separabilites of each component part within base assembly.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1993.04b
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• pp.257-261
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• 1993

This paper presents a design method of turning device for robotic assembly based on the verification of a instability for a base assembly. To derive the instability, first we inference collision free assembly directions by extracting separable directions for the part, and calculate the separability which gives informations as to how the part can be dasily separated. Using the result, we determine the instability evaluated by summing the all separabilites of each component part in base assembly. The proposed method gives a design guidance of turning device by evaluating a degree of the motion istability for the base assembly in flexible manufacturing application. An example is given to illustrate the concepts and procedure of the proposed scheme.

• Current Applied Physics
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• v.18 no.11
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• pp.1447-1450
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• 2018

The electron spin resonance (ESR) detects point defect of the In-Ga-Zn oxide (IGZO) like singly ionized oxygen vacancies and excess oxygen, and get spin density as a parameter of defect state. So, we demonstrated the spin density measurement of the IGZO film with various deposition conditions and it has linear relationship. Moreover, we matched the spin density with the total BTS and the threshold voltage ($V_{th}$) distribution of the IGZO thin film transistors. The total BTS ${\Delta}V_{th}$ and the $V_{th}$ distribution were degraded due to the spin density increases. The spin density is the useful indicator to predict $V_{th}$ instability of IGZO TFTs.

• 한국연소학회:학술대회논문집
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• 2005.10a
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• pp.281-286
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• 2005

To understand fundamental characteristics of combustion in a small scale device, the effects of the momentum and heat loss on the stability of laminar premixed flames in a narrow channel are investigated by two-dimensional high-fidelity numerical simulation. A general finding is that momentum loss promotes the Saffman-Taylor (S-T) instability which is additive to the Darrieus-Landau (D-L) instabilities, while the heat loss effects result in an enhancement of the diffusive-thermal (D-T) instability. These effects are also valid in nonlinear behavior of the premixed flame. The simulations of multiple cell interactions are also conducted with heat and momentum loss effects.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2010.11a
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• pp.432-437
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• 2010

A new device injecting secondary fuel behind flameholder was invented and tested in order to reduce low frequency combustion instability of combustor using V-gutter flameholder. Specially designed combustion device could make large combustion instability up to 180 dB successfully, and newly invented device made a success to reduce 110~120Hz low frequency pressure pulsation up to 84%. It was found that the fuel flow rate of secondary fuel supplying behind flameholder was the only parameter which dominates reduction of instability. It is considered that stabilized flame with sufficient secondary fuel can lead to break the connection between combustion system and acoustic system due to independence of flame from fluctuation of main fuel resulted from synchronization with acoustic wave.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.450-450
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• 2012

In recent days, advances in ZnO-based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). In particular, the development of high-mobility ZnO-based channel materials has been proven invaluable; thus, there have been many reports of high-performance TFTs with oxide semiconductor channels such as ZnO, InZnO (IZO), ZnSnO (ZTO), and InGaZnO (IGZO). The reliability of oxide TFTs can be improved by examining more stable oxide channel materials. In the present study, we investigated the effects of an ALD-deposited water vapor permeation barrier on the stability of ZnO and HfZnO (HZO) thin film transistors. The device without the water vapor barrier films showed a large turn-on voltage shift under negative bias temperature stress. On the other hand, the suitably protected device with the lowest water vapor transmission rate showed a dramatically improved device performance. As the value of the water vapor transmission rate of the barrier films was decreased, the turn-on voltage instability reduced. The results suggest that water vapor related traps are strongly related to the instability of ZnO and HfZnO TFTs and that a proper combination of water vapor permeation barriers plays an important role in suppressing the device instability.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.9
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• pp.1627-1634
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• 2017

In this work, a junctionless transistor with different film thickness of amorphous InGaZnO has been fabricated and it's instability has been analyzed with different film thickness under positive and negative gate stress as well as light illumination. It was found that the threshold voltage shift and the variation of drain current have been increased with decrease of film thickness under the condition of gate stress and light illumination. The reasons for the observed results have been explained by stretched-exponential model and device simulation. Due to the reduced carrier trapping time with decrease of film thickness, electrons and holes can be activated easily. Due to the increase of vertical channel electric field reaching the back interface with decrease of film thickness, more electrons and holes can be accumulated in back interface. When one decides the film thickness for the fabrication of junctionless transistor, the more significant device instability with decrease of film thickness should be consdered.

• Proceedings of the KSR Conference
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• 2007.05a
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• pp.1403-1407
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• 2007

The bogie of Rolling Stock is the basic rolling component. It operates the train body, guides the body considering various tracks and offers comfort to passengers. We can verify the safety level of bogie about all factors through the first -grade scenario of Preliminary Hazard Analysis, but especially the horizontal acceleration sensor, equipped in each power bogie and trailer bogie, is the device, which makes it possible to test bogie instability and uncomfortable body movements by the method, similar to actual train driving, and in this context the necessity of this device becomes important. This paper would classify the main functions of driving sub system and examine the reliability, availability, maintainability and safety, which are main factors of RAMS. Especially, we would realize the bogie instability sensor with a simulator and offer the content in analyzing the data by the statistical method, which are obtained through the connected test with OBCS.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.687-694
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• 2008

This paper is focused on the improvement of MOS device reliability related to deuterium process. The injection of deuterium into the gate oxide film was achieved through two kind of method, high-pressure annealing and low-energy implantation at the back-end of line, for the purpose of the passivation of dangling bonds at $SiO_2/Si$ interface. Experimental results are presented for the degradation of 3-nm-thick gate oxide ($SiO_2$) under both negative-bias temperature instability (NBTI) and hot-carrier injection (HCI) stresses using P and NMOSFETs. Annealing process was rather difficult to control the concentration of deuterium. Because when the concentration of deuterium is redundant in gate oxide excess traps are generated and degrades the performance, we found annealing process did not show the improved characteristics in device reliability, compared to conventional process. However, deuterium ion implantation at the back-end process was effective method for the fabrication of the deuterated gate oxide. Device parameter variations under the electrical stresses depend on the deuterium concentration and are improved by low-energy deuterium implantation, compared to conventional process. Our result suggests the novel method to incorporate deuterium in the MOS structure for the reliability.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.3264-3269
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• 2007

Combustion instability is a serious obstacle for the lean premixed combustion of gas turbines, and can even cause fatal damage to the combustor and the entire system. Thus, improved understanding of the mechanisms of combustion instability is necessary for designing and operating gas turbine combustors. In this study, in order to understand the instability phenomena, an experimental study was conducted in a rearwardstep dump combustor with LPG and air. The fluctuations of pressure and heat release were measured by piezoelectric pressure sensor and High speed Intensified Charge Coupled Device (ICCD) camera respectively. Various types of combustion modes occurred in accordance with the equivalence ratio and the fuel supplying conditions. The unmixedness of the fuel and air can be controlled by changing the mixing distance ($L_{fuel}$). It is found that the unmixedness of the fuel and air affects the characteristics of flame behavior and pressure fluctuations in a lean premixed flame.