• Journal of Institute of Control, Robotics and Systems
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• v.9 no.8
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• pp.592-599
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• 2003

As one of the Principal modalities of human sensation, tactile feel is prerequisite for building wide variety of applications such as telemanipulation, virtual reality and medical engineering. A dynamic Braille display device based on a polymer actuator is presented. The actuator, often called artificial muscle actuator has advantageous features over the existing methods in terms of intrinsic softness, ease of fabrication, cost-effectiveness and miniaturization. The principles of actuation with dielectric elastomer is introduced, and necessary considerations on the design of a tactile display device are discussed. The design of the device is described in detail including the fabrication process and driving electronics. Also, preliminary results of experiments are given to evaluate its performance.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.3
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• pp.213-224
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• 2010

An optically controlled silicon MESFET (OPFET) was fabricated by diffusion process to enhance the quantum efficiency, which is the most important optoelectronic device performance usually affected by ion implantation process due to large number of process induced defects. The desired impurity distribution profile and the junction depth were obtained solely with diffusion, and etching processes monitored by atomic force microscope, spreading resistance profiling and C-V measurements. With this approach fabrication induced defects are reduced, leading to significantly improved performance. The fabricated OPFET devices showed proper I-V characteristics with desired pinch-off voltage and threshold voltage for normally-on devices. The peak photoresponsivity was obtained at 620 nm wavelength and the extracted external quantum efficiency from the photoresponse plot was found to be approximately 87.9%. This result is evidence of enhancement of device quantum efficiency fabricated by the diffusion process. It also supports the fact that the diffusion process is an extremely suitable process for fabrication of high performance optoelectronic devices. The maximum gain of OPFET at optical modulated signal was obtained at the frequency of 1 MHz with rise time and fall time approximately of 480 nS. The extracted transconductance shows the possible potential of device speed performance improvements for shorter gate length. The results support the use of a diffusion process for fabrication of high performance optoelectronic devices.

• Korean Journal of Materials Research
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• v.28 no.1
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• pp.18-23
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• 2018

To study the impedance characteristics of a fluorescent OLED according to the device structure, we fabricated Device 1 using ITO / NPB / $Alq_3$ / Liq / Al, Device 2 using ITO / 2-TNATA / NPB / $Alq_3$ / Liq / Al, and Device 3 using ITO / 2-TNATA / NPB / SH-1:BD / $Alq_3$ / Liq / Al. The current density and luminance decreased with an increasing number of layers of the organic thin films in the order of Device 1, 2, 3, whereas the current efficiency increased. From the Cole-Cole plot at a driving voltage of 6 V, the maximum impedance values of Devices 1, 2, and 3 were respectively 51, 108, and $160{\Omega}$ just after device fabrication. An increase in the impedance maximum value is a phenomenon caused by the charge mobility and the resistance between interfaces. With the elapse of time after the device fabrication, the shape of the Cole-Cole plot changed to a form similar to 0 or a lower voltage due to the degradation of the device. As a result, we were able to see that an impedance change in an OLED reflects the characteristics of the degradation and the layer.

• Journal of Institute of Convergence Technology
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• v.1 no.1
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• pp.48-51
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• 2011

Transdermal drug delivery device is a method of drug delivery through the skin. Skin has a very large area, so it is attractive route to drug delivery. When drug delivery through the skin, microneedle has a advantage that painless, constant drug deliver and penetration efficient; nevertheless the cost is expensive because fabrication process need a particular equipment and not suitable in mass production. This study shows microneedle fabrication process using convergence of general MEMS process and dicing process that can make 3-D sharp microneedle tip and this fabrication process suitable for mass production.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.2
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• pp.102-110
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• 2002

In this paper, we present the fabrication of tunable capacitors and 3-dimensional inductors. This work was related to fabricated 3-dimensional device for need of micro device in developing new intelligence age. This device was fabricated by electroplating used electroplating PR and high-vacuum evaporation of metal. Fabricated micro-inductor is consisted of air-bridge on electroplating rod and electroplated core. Micro-capacitor is consisted of thin metal membrane and electroplated core. Electroplating material is used Cu metal solvent. Air-gap between metal-layers function as almost perfect isolation layer. The most advantage of our micro-inductor and micro-capacitor compared to present device is a possibility that can fabricate on RF MEMS(microelectro-mechanical systems) application with high performance and various function. In this paper, we present the fabrication of tunable capacitors and 3-dimensional inductors. This work was related to fabricated 3-dimensional device for need of micro-device in developing new intelligence age. This device was fabricated by electroplating used electroplating PR and high-vacuum evaporation of metal. Fabricated micro-inductor is consisted of air-bridge on electroplating rod and electroplated core. Micro-capacitor is consisted of thin metal membrane and electroplated core. Electroplating material is used Cu metal solvent. Air-gap between metal-layers function as almost perfect isolation layer. The most advantage of our micro-inductor and micro-capacitor compared to present device is a possibility that can fabricate on RF MEMS application with high performance and various functions.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.15 no.2
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• pp.1-8
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• 2016

Generally, electrical circuits are fabricated as Printed Circuit Boards (PCBs) and mounted on the casing of the product. Additionally, this requires many other parts and some labor for assembly. Recently, molding technology has increasingly been applied to embed simple circuits in plastic casing. The technology is called a Molded Interconnected Device (MID). By using this technology, PCB fabrication can be replaced by molding, and much of the corresponding assembly process for PCBs can be eliminated if the circuit is simple enough for molding. Furthermore, as the improvement of conductive materials and printing technologies of simple electric circuits can be printed directly on the casing part, this also reduces the complexity of the product design and production cost. Therefore, this paper introduces a new MID fabrication process using direct 3D printing technology. Additionally, it is applied to an automotive part of a cruise control switch. The methodology and design are shown.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.751-754
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• 2003

Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with pseudomorphic HEMTs. We have studied the calibration on the DC and RF characteristics of the MHEMT device using I $n_{0.53}$G $a_{0.47}$As/I $n_{0.52}$A1$_{0.48}$As modulation-doped heterostructure on the GaAs wafer. For the optimized device performance simulation, we calibrated the device performance of 0.1-${\mu}{\textrm}{m}$ $\Gamma$-gate MHEMT fabricated in our research center using the 2D ISE-DESSIS device simulator. With this calibrated parameter set, we have obtained very good reproducibility. The device simulation on the DC and RF characteristics exhibits good reproducibility for our 0.1-${\mu}{\textrm}{m}$ -gate MHEMT device compared with the measurements. We expect that our calibration result can help design over-100-GHz MHEMT devices for better device performance.ormance.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.151-151
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• 2006

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1105-1106
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• 2008

Staggered type self-aligned transparent-oxide-semiconductor transistors with indium-zinc-oxide as a semiconductor have studied. In this device fabrication, successive sputtering of oxide semiconductor and insulator without breaking of vacuum and without exposing in air, humidity and oxygen can be realized because oxide semiconductor is transparent. As a result of fabrication, transistor characteristics with mobility of $30cm^2/Vs$ and on-off ratio of $10^5$ could be obtained for the newly developed self-alignment device structure.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.10a
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• pp.665-666
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• 2006