• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.687-694
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• 2008

This paper is focused on the improvement of MOS device reliability related to deuterium process. The injection of deuterium into the gate oxide film was achieved through two kind of method, high-pressure annealing and low-energy implantation at the back-end of line, for the purpose of the passivation of dangling bonds at $SiO_2/Si$ interface. Experimental results are presented for the degradation of 3-nm-thick gate oxide ($SiO_2$) under both negative-bias temperature instability (NBTI) and hot-carrier injection (HCI) stresses using P and NMOSFETs. Annealing process was rather difficult to control the concentration of deuterium. Because when the concentration of deuterium is redundant in gate oxide excess traps are generated and degrades the performance, we found annealing process did not show the improved characteristics in device reliability, compared to conventional process. However, deuterium ion implantation at the back-end process was effective method for the fabrication of the deuterated gate oxide. Device parameter variations under the electrical stresses depend on the deuterium concentration and are improved by low-energy deuterium implantation, compared to conventional process. Our result suggests the novel method to incorporate deuterium in the MOS structure for the reliability.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.188-191
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• 2012

This paper introduces a new method regarding deuterium incorporation in the gate dielectric including deuterium implantation and post-annealing at the back-end-of-the process line. The control device and the deuterium furnace-annealed device were also prepared for comparison with the implanted device. It was observed that deuterium implantation at a light dose of $1{\times}10^{12}-1{\times}10^{14}/cm^2$ at 30 keV reduced hot-carrier injection (HCI) degradation and negative bias temperature instability (NBTI) within our device structure due to the reduction in oxide charge and interface trap. Deuterium implantation provides a possible solution to enhance the bulk and interface reliabilities of the gate oxide under the electrical stress.

• The Bulletin of The Korean Astronomical Society
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• v.36 no.2
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• pp.105.1-105.1
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• 2011

We present the modeling results of deuterium fractionation of water ice, $H_2$, and the primary deuterium isotopologues of $H3^+$ in the physical conditions associated with the star and planet formation process. We calculated the deuterium chemistry for a range of gas temperatures (Tgas~10-30 K) and ortho/para ratio (opr ) of $H_2$ based on state-to-state reaction rates and explore the resulting fractionation including the formation of a water ice mantle coating grain surfaces. We find that the deuterium fractionation exhibits the expected temperature dependence of large enrichments at low gas temperature, but only for opr-H2<0.01. More significantly the inclusion of water ice formation leads to large D/H ratios in water ice (${\geq}10^{-2}$ at 10 K) but also alters the overall deuterium chemistry. For T<20 K the implantation of deuterium into ices lowers the overall abundance of HD which reduces the efficiency of deuterium fractionation at high density. Under these conditions HD will not be the primary deuterium reservoir in the cold dense interstellar medium and $H3^+$ will be the main charge carrier in the dense centers of pre-stellar cores and the protoplanetary disk midplane.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.7
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• pp.23-31
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• 2008

Experiment results are presented for gate oxide degradation under the constant voltage stress conditions using MOSFETs with 3-nm-thick gate oxides that are treated by deuterium gas. Two kinds of methods, annealing and implantation, are suggested for the effective deuterium incorporation. Annealing process was rather difficult to control the concentration of deuterium. Because the excess deuterium in gate oxide could be a precursor for the wear-out of gate oxide film, we found annealing process did not show improved characteristics in device reliability, compared to conventional process. However, deuterium implantation at the back-end process was effective method for the deuterated gate oxide. Device parameter variations as well as the gate leakage current depend on the deuterium concentration and are improved by low-energy deuterium implantation, compared to those of conventional process. Especially, we found that PMOSFET experienced the high voltage stress shows a giant isotope effect. This is likely because the reaction between "hot" hole and deuterium is involved in the generation of oxide trap.

• Bulletin of the Korean Chemical Society
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• v.35 no.3
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• pp.749-752
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• 2014

New software was developed for the assignment of elemental formulae based on high-resolution mass spectra and subsequent hydrogen/deuterium exchange data. Entire peaks in high-resolution mass spectra were grouped by their Kendrick mass defect values, and the weighted RMS deviations between theoretical and experimental values were used to determine elemental formulae. After this initial assignment, formulae containing deuterium atoms were sorted in order to interpret hydrogen/deuterium exchange spectra. The software was successfully applied to hydrogen/deuterium exchange spectra of resins and aromatic fractions from heavy crude oil.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.4
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• pp.13-19
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• 2010

MOSFET with deuterium-incorporated gate oxide shows enhanced reliability compared to conventional MOSFET. We present an alternative process whereby deuterium is delivered to the location where the gate oxide reside by an implantation process. Deuterium ions were implanted using two different energies to account for the topography of the overlaying layers and placing the D peak at the top of gate oxide. A short anneal at forming gas was performed to remove the D-implantation damage. We have observed that deuterium ion implantation into the gate oxide region can successfully remove the interface states and the bulk defects. But the energy and the dose of the deuterium implant need to be optimized to maintain the Si substrates dopant activation, while generating deuterium bonds inside gate oxide. CV and IV characteristics studies also determined that the deuterium implant dose not degrade the transistor performance.

• Korean Journal of Materials Research
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• v.31 no.8
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• pp.465-470
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• 2021

Deuterium is a crucial clean energy source required for nuclear fusion and is a future resource needed in various industries and scientific fields. However, it is not easy to enrich deuterium because the proportion of deuterium in the hydrogen mixture is scarce, at approximately 0.016 %. Furthermore, the physical and chemical properties of the hydrogen mixture and deuterium are very similar. Therefore, the efficient separation of deuterium from hydrogen mixtures is often a significant challenge when using modern separation technologies. Recently, to effectively separate deuterium, studies utilizing the 'Kinetic Quantum Sieving Effect (KQS)' of porous materials are increasing. Therefore, in this review, two different strategies have been discussed for improving KQS efficiency for hydrogen isotope separation performance using nanoporous materials. One is the gating effect, which precisely controls the aperture locally by adjusting the temperature and pressure. The second is the breathing phenomenon, utilizing the volume change of the structure from closed system to open system. It has been reported that efficient hydrogen isotope separation is possible using these two methods, and each of these effects is described in detail in this review. In addition, a specific-isotope responsive system (e.g., 2nd breathing effect in MIL-53) has recently been discovered and is described here as well.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.11
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• pp.29-35
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• 2015

The photo-response characteristics of polysilicon based metal-semiconductor-metal (MSM) photodetector structure, depending on deuterium treatment method, was analyzed by means of the dark-current and the light-current measurements. Al/Ti bilayer was used as a Schottky metal. Our purpose is to incorporate the deuterium atoms into the absorption layer of undoped polysilicon, effectively, for the defect passivation. We have introduced two deuterium treatment methods, a furnace annealing and an ion implantation. In deuterium furnace annealing, deuterium bond was distributed around polysilicon surface where the light current flows. As for the ion implantation, even thought it was a convenient method to locate the deuterium inside the polysilicon film, it creates some damages around polysilicon surface. This deteriorated the photo-response in our photodetector structure.

• Nuclear Engineering and Technology
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• v.54 no.11
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• pp.4231-4235
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• 2022

Considering the importance of deuterium in nuclear science including medical and industrial researches such as (BNCT) and nuclear reactors respectively, it is important to study various possible ways in addition to common methods for measuring its concentration. This study is an effort to measure deuterium concentration using PGNAA. The main idea is to calculate the area under 2.23 MeV gamma-rays photo peak resulting from neutron collision with Hydrogen atoms which are in mix with deuterium in samples. The study carried out by both simulation and experiment. Monte Carlo MCNPX2.6 code has been used for simulation and based on its acceptable results an experimental setup has been arranged. The coordination of results was in the range of R = 0.99 and R = 0.98 in simulation and experiment respectively. The accuracy of the study has been investigated by measuring the concentration of an unknown sample by both PGNAA and Fourier transform infrared spectroscopy (FT-IR) methods in which there were acceptable correlation between these two methods.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.117-118
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• 2008

High-pressure deuterium annealing process is proposed and investigated for enhanced electrical and reliability properties of 512Mb DDR2 DRAM without increase in process complexity. High pressure deuterium annealing (HPDA) introduced during post metal anneal (PMA) improves not only DRAM performance but also reliability characteristics of MOSFET. Compared with a control sample annealed in a conventional forming gas, additional annealing in a high pressure deuterium ambient at $400^{\circ}C$ for 30 min decreased G1DL current and junction leakage. The improvements can be explained by deuterium incorporation at $SiO_2$/Si substrate interface near isolation trench edge.