• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1488-1490
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• 1997

$(Pb_{1-x}La_x)Ti_{1-x/4}O_3$ (x=0, 0.02, 0.04, 0.06, 0.08) ceramic thin films were fabricated by Sol-Gel method. A stock solution of (Pb,La)$TiO_3$ with excess Pb 10mol% was made and spin-coated on the Pt/Ti/$SiO_2$/Si substrate at 4000rpm for 30 seconds. Coated specimens were dried on the hot-plate at $350^{\circ}C$ for 10 min and sintered at $500{\sim}750^{\circ}C$ for 1 hour. The dielectric constant, remanent polarization and coercive field of the PLT(6 at.%) thin films sintered at $650^{\circ}C$ were 884, $13.95{\mu}C/cm^2$ and 8.7kV/cm, respectively. Pyroelectric coefficient, figure of merit of pyroelectric current, voltage responsivity and detectivity of PLT(6at.%) thin films were $3.2{\times}10^{-8}\;C/cm^2K$, $1.02{\times}10^{-8}\;C{\cdot}cm/J$, $2.9{\times}10^{-11}\;C{\cdot}cm/J$, $0.29{\times}10^{-8}\;C{\cdot}cm/J$, respectively.

• Electrical & Electronic Materials
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• v.10 no.6
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• pp.541-547
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• 1997

(Pb$_{1-x}$ La$_{x}$)Ti$_{1-x}$ $_4$O$_3$(x=0, 0.02, 0.04, 0.08) ceramic thin films were fabricated by Sol-Gel method. A stock solution of (Pb, La)TiO$_3$ with excess Pb 10 mol% was made and spin-coated on the Pt/Ti/SiO$_2$/Si substrate at 400rpm for 30 seconds. Coated specimens were dried on the hot-plate at 35$0^{\circ}C$ for 10 min and sintered at 500~75$0^{\circ}C$ for 1 hour. The dielectric constant, remanent polarization and coercive field of the PLT(6at.%) thin films sintered at $650^{\circ}C$ were 884, 13.95$\mu$C/$\textrm{cm}^2$ and 8.7kV/cm, respectively. Pyroelectric coefficient, figure of merit of pyroelectric current, voltage responsivity and detectivity of PLT(6at.%) thin films were 3.2$\times$10$^{-8}$ C/$\textrm{cm}^2$K, 1.02$\times$10$^{-8}$ C.cm/J, 2.9 $\times$10$^{-11}$ C.cm/J, 0.29$\times$10$^{-8}$ C.cm/J, respectively.ely.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.1005-1009
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• 2008

A noble infrared $\lambda/4$ absorbing structure using metal reflector was studied for uncooled infrared sensors. This paper described the design and the fabrication of IR uncooled detectors which were composed of 21 by 21 elements using the surface micromachining technology. The characteristics of the array were investigated in the spectral region of 4.26 ${\mu}m$. The fabricated detectors exhibited the thermal mass of $9.75\times10^{-9}$ J/K, the thermal conductance of $1.31\times10^{-6}$ W/K, the thermal time constant of 7.4 ms, the responsivity of $1.07\times10^5$ V/W and the detectivity of $1.04\times10^9$ $cmHz^{1/2}/W$, at the chopper frequency of 10 Hz and the bias current of 9.22${\mu}A$. Finally the absorptance efficiency of $\lambda/4$ absorbing structure was about 23.2 % higher than that of absence absorbing structure.

• Journal of Sensor Science and Technology
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• v.20 no.2
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• pp.114-117
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• 2011

A thick 25 ${\mu}m$ thickness poled P(VDF/TrFE) film pyroelectric infrared ray sensor has been fabricated and then thin 1.6 ${\mu}m$ thickness P(VDF/TrFE) film pyroelectric infrared ray sensor has been fabricated also. These thick and thin P(VDF/TrFE) film pyroelectric infrared ray sensor was mounted in TO-5 housing to detect infrared light of 5.5 ~ 14 ${\mu}m$ wavelength for human body detecting with each other. The noise output voltage of the thick P(VDF/TrFE) film pyroelectric infrared ray sensor were 380 mV and NEP(noise equivalent power) is $3.95{\times}10^{-7}$ W which is the similar value with the commercial pyroelectric infrared ray sensor using ceramic materials as a sensing material. The NEP and specific detectivity $D^*$ of the thin P(VDF/TrFE) film pyroelectric infrared ray sensor were $2.13{\times}10^{-8}$ W and $9.37{\times}106$ cm/W under emission energy of 13 ${\mu}W/cm^2$ respectively. These result caused by lower thermal diffusion coefficient of a thin 1.6 ${\mu}m$ thickness PVDF/TrFE film than the thick 25 ${\mu}m$ thickness poled P(VDF/TrFE) film pyroelectric infrared ray sensor.

• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.227-230
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• 2016

Zn_xMn_3-xO₄ (0.95≤x≤1.20) specimens were prepared using a conventional solid state reaction method. All specimens were sintered in air at 1,200℃ for 12 h, cooled at a rate of 2℃/min to 800℃, and subsequently quenched to room temperature. We investigated the electrical properties of Zn_xMn_3-xO₄ specimens with various amounts of ZnO for use as IR detectors. At a composition of x≥1.15, the ZnO phase precipitates beside the spinel structure. The electrical resistivity at room temperature, activation energy, responsivity, and detectivity of a Zn_1.10Mn_1.90O₄ specimen are 653.2 kΩ-cm, 0.392 eV, 0.016 V/W, and 7.52×10³ cmHz^1/2/W, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.127-127
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• 2010

Owing to many advantages on indirect intersubband absorption from the hole miniband to the electron miniband based on the type-II band alignment in InAs/GaSb strained-layer superlattice (SLS), InAs/GaSb SLS infrared photodetector (SLIP) has emerged as a promising system to realize high-detectivity quantum photodetector operating up to room temperature in the spectral range of mid-infrared (MIR) to far-infrared (FIR). In particular, n-barrier-n (n-B-n) structure designed for blocking the majority-carrier dark current makes it possible for MIR/FIR dual-band SLIP whose photoresponse (PR) band can be exclusively selected by the bias polarity. In this study, we present the MIR and FIR photoresponse (PR) mechanism identified by dual-band PR spectra and photoluminescence (PL) profiles taken from InAs/GaSb SLIP. In the MIR/FIR PR spectra measured by changing bias polarity, each spectrum individually shows a series of distinctive peaks related to the transitions from the hole subbands to the conduction one. The PR mechanism at each polarity is discussed in terms of diffusion current, and a superposition of MIR-PR in the FIR-PR spectrum is explained by tunnelling of electrons activated in MIR-SLS. The effective FIR-PR spectrum decomposed into three curves for HH1, LH1, and HH2 has revealed the edge energies of 120, 170, and 220 meV, respectively, and the temperature variation of the MIR-PR edge energies shows that the temperature behavior of the SLS systems can be approximately expressed by the Varshni empirical equation.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.6
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• pp.1001-1007
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• 2002

To improve the performance of the PZT thin flms, each PZT and PT layer was alternately deposited on a Pt/Ti/Si$_3$N$_4$/SiO$_2$/Si substrate by a modified sol-gel solid precursor technique. For comparison, PZT thin films were also prepared with an identical method under the same conditions. XRD measurement revealed that the diffraction pattern of the multilayer film was due to the superimposition of the PZT and PT patterns. At 1㎑, a dielectric constant of 389 and 558, a dielectric loss of 1.2% and 1.1% were obtained for the PZT/PT and PZT thin films, respectively. If we consider the PT dielectric constant to be 260, it is clear that the dielectric constant of alternately deposited PZT/PT thin films was well adjusted. The PZT/PT thin film showed a low dielectric constant and a similar dielectric loss compared with those of the PZT film. The figures of merit on detectivity for the PZT/PT and PZT thin films were 20.3$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and 18.7$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and the figures of merit on voltage response were 0.038㎡/C and 0.028 ㎡/C, respectively. The high figures of merit for the PZT/PT film were ascribed to its relatively low dielectric constant when compared to the PZT thin films.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.194-197
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• 1991

In this study, $(Pb_{0.99}La_{0.01})[(Sb_{1/2}Sn_{1/2})_{0.10}Ti_{0.25}Zr_{0.65}]O_3$, added $MnO_2$ (0-0.30[mol%]) ceramics were fabricated by the mixed oxide method. The sintering temperature and time were $1250[^{\circ}C]$, 2[hr], respectively. In the $(Pb_{0.99}La_{0.01})[(Sb_{1/2}Sn_{1/2})_{0.10}Ti_{0.25}Zr_{0.65}]O_3$ added $MnO_2$ (0.24[mol%]) specimens, relative dielectric constant and dielectric loss were minimum values 3.52, 0.003, respectively, and Curie temperature were highest values $256[^{\circ}C]$. Pyroelectric coefficient and voltage responsivity of the $(Pb_{0.99}La_{0.01})[(Sb_{1/2}Sn_{1/2})_{0.10}Ti_{0.25}Zr_{0.65}]O_3$, and added $MnO_2$ (0.24[mol%]) specimen were good values, $6.73{\times}10^{-8}[C/cm^2K],\;125[v/W]$, respectively. Figure of merit of pyroelectric current, voltage and detectivity of the specimen, $(Pb_{0.99}La_{0.01})[(Sb_{1/2}Sn_{1/2})_{0.10}Ti_{0.25}Zr_{0.65}]O_3$ added $MnO_2$ (0.24[mol%]) were good values $2.714{\times}10^{-8}[Ccm/J],\;7.706{\times}10^{-11}[Ccm/J],\;2.640{\times}10^{-8}[Ccm/J]$, respectively. Voltage responsivity of the $(Pb_{0.99}La_{0.01})[(Sb_{1/2}Sn_{1/2})_{0.10}Ti_{0.25}Zr_{0.65}]O_3$ added $MnO_2$ (0.24[mol%]) specimens were decreased with increasing the chopper frequency.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.131-131
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• 2003

Surface micromachined uncooled IR detector with the optimized VOx bolometric layer was fabricated based on sandwich structure of the V$_2$O$_{5}$V/V$_2$O$_{5}$. In order to improve the detectivity of the IR detector, we optimized a few factors in the viewpoint of bolometric material. Vanadium oxide thin film is a promising material for uncooled microbolometers due to its high temperature coefficient of resistance at room temperature. It is, however, very difficult to deposit vanadium oxide thin films having high temperature coefficient of resistance and low resistance because of process limits in microbolometer fabrication. In order to increase the responsivity and decrease noise, we increase TCR of bolometric material and decrease room temperature resistance based on the sandwich structure of the V$_2$O$_{5}$V/V$_2$O$_{5}$ by conventional sputter. By oxygen diffusion through low temperature annealing of V$_2$O$_{5}$V/V$_2$O$_{5}$ in oxygen ambient, various mixed phase vanadium oxide was formed and we obtained TCR in range of-1.2 ~-2.6%/$^{\circ}C$ at room temperature resistance of 5~100k$\Omega$.mega$.

• Journal of Biosystems Engineering
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• v.22 no.3
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• pp.295-302
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• 1997

An ultimate purpose of this study was to develop an automatic system for brown rice quality inspection using image processing technique. In this study emphasis was put on developing an algorithm for discriminating the brown rice kernels depending on their external quality with a color image processing system equipped with an adaptor magnifying the input image and optical fiber for oblique lightening. Primarily, geometical and optical features of images were analyzed with paddy and the various brown rice kernel samples such as a sound, cracked, peen-transparent, green-opaque, colored, white-opaque and brokens. Secondary, geometrical and optical parameters significant for identifying each rice kernels were screened by a statistical analysis(STEPWISE and DISCRIM procedure, SAS wer. 6) and an algorithm fur on- line discrimination of the rice kernels in static state were developed, and finally its performance was evaluated. The results are summarized as follows. 1) It was ascertained that the cracked kernels can be detected when e incident angle of the oblique light is less than 2$0^{\circ}C$ but detectivity was significantly affected by the angle between the direction of the oblique light and the longitudinal axis of the rice kernel and also by the location of the embryo with respect to the oblique light. 2) The most significant Parameters which can discriminate brown rice kernels are area, length and R, B and r values among the several geometrical and optical parameters. 3) Discrimination accuracies of the algorithm were ranged from 90% to 96% for a sound, cracked, colored, broken and unhulled, about 81 % for green-transparent and white-opaque and 75 % for green-opaque, respectively.