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http://dx.doi.org/10.5369/JSST.2011.20.2.114

Effect of P(VDF/TrFE) Film Thickness on the Characteristics of Pyroelectric Passive Infrared Ray Sensor for Human Body Detection  

Kwon, Sung-Yeol (Department of Electrical Engineering, Pukyong National University)
Publication Information
Journal of Sensor Science and Technology / v.20, no.2, 2011 , pp. 114-117 More about this Journal
Abstract
A thick 25 ${\mu}m$ thickness poled P(VDF/TrFE) film pyroelectric infrared ray sensor has been fabricated and then thin 1.6 ${\mu}m$ thickness P(VDF/TrFE) film pyroelectric infrared ray sensor has been fabricated also. These thick and thin P(VDF/TrFE) film pyroelectric infrared ray sensor was mounted in TO-5 housing to detect infrared light of 5.5 ~ 14 ${\mu}m$ wavelength for human body detecting with each other. The noise output voltage of the thick P(VDF/TrFE) film pyroelectric infrared ray sensor were 380 mV and NEP(noise equivalent power) is $3.95{\times}10^{-7}$ W which is the similar value with the commercial pyroelectric infrared ray sensor using ceramic materials as a sensing material. The NEP and specific detectivity $D^*$ of the thin P(VDF/TrFE) film pyroelectric infrared ray sensor were $2.13{\times}10^{-8}$ W and $9.37{\times}106$ cm/W under emission energy of 13 ${\mu}W/cm^2$ respectively. These result caused by lower thermal diffusion coefficient of a thin 1.6 ${\mu}m$ thickness PVDF/TrFE film than the thick 25 ${\mu}m$ thickness poled P(VDF/TrFE) film pyroelectric infrared ray sensor.
Keywords
PVDF; P(VDF/TrFE); Pyroelectric; Infrared; Ray; Thin film;
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