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http://dx.doi.org/10.4313/TEEM.2016.17.4.227

Electrical Properties of ZnxMn3-xO4 Ceramics for Application as IR Detectors  

Kim, Kyeong-Min (Department of Materials Engineering and Convergence Technology, Engineering Research Institute, Gyeongsang National University)
Lee, Sung-Gap (Department of Materials Engineering and Convergence Technology, Engineering Research Institute, Gyeongsang National University)
Lee, Dong-Jin (Department of Materials Engineering and Convergence Technology, Engineering Research Institute, Gyeongsang National University)
Publication Information
Transactions on Electrical and Electronic Materials / v.17, no.4, 2016 , pp. 227-230 More about this Journal
Abstract
ZnxMn3-xO4 (0.95≤x≤1.20) specimens were prepared using a conventional solid state reaction method. All specimens were sintered in air at 1,200℃ for 12 h, cooled at a rate of 2℃/min to 800℃, and subsequently quenched to room temperature. We investigated the electrical properties of ZnxMn3-xO4 specimens with various amounts of ZnO for use as IR detectors. At a composition of x≥1.15, the ZnO phase precipitates beside the spinel structure. The electrical resistivity at room temperature, activation energy, responsivity, and detectivity of a Zn1.10Mn1.90O4 specimen are 653.2 kΩ-cm, 0.392 eV, 0.016 V/W, and 7.52×103 cmHz1/2/W, respectively.
Keywords
IR detector; ZnxMn3-xO4; Responsivity; Activation energy; Solid state reaction method;
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