• Carbon letters
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• v.8 no.1
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• pp.12-16
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• 2007

Molecular sieving carbon (MSC) for separating $O_2-N_2$ and $CO_2-CH_4$ has been prepared through chemical vapor deposition (CVD) of methane and benzene on activated carbon spheres (ACS) derived from polystyrene sulfonate beads. The validity of the material for assessment of molecular sieving behavior for $O_2-N_2$ and $CO_2-CH_4$ pair of gases was assessed by the kinetic adsorption of the corresponding gases at $25^{\circ}C$. It was observed that methane cracking on ACS lead to deposition of carbon mostly in whole length of pores rather than in pore entrance, resulting in a reduction in adsorption capacity. MSC showing good selectivity for $CO_2-CH_4$ and $O_2-N_2$ separation was obtained through benzene cracking on ACS with benzene entrantment of $0.40{\times}10^{-4}\;g/ml$ at cracking temperature of $725^{\circ}C$ for a period of 90 minutes resulting in a selectivity of 3.31:1.00 for $O_2-N_2$ and 8.00:1.00 for $CO_2-CH_4$ pair of gases respectively.

• Korean Journal of Materials Research
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• v.27 no.7
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• pp.364-368
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• 2017

We performed temperature dependent current-voltage (I-V) measurements to characterize the electrical properties of $Au/Al_2O_3/n-Ge$ metal-insulator-semiconductor (MIS) diodes prepared with and without $H_2O$ prepulse treatment by atomic layer deposition (ALD). By considering the thickness of the $Al_2O_3$ interlayer, the barrier height for the treated sample was found to be 0.61 eV, similar to those of Au/n-Ge Schottky diodes. The thermionic emission (TE) model with barrier inhomogeneity explained the final state of the treated sample well. Compared to the untreated sample, the treated sample was found to have improved diode characteristics for both forward and reverse bias conditions. These results were associated with the reduction of charge trapping and interface states near the $Ge/Al_2O_3$ interface.

• Bulletin of the Korean Chemical Society
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• v.34 no.4
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• pp.1199-1204
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• 2013

Nanocomposites consisting of Sn nanoparticles and graphene oxide (GO) were electrophoretically deposited onto Cu current collectors that was used for anodes in Li ion batteries (LIBs). In order to optimize the electrochemical performance of nanocomposites as an anode material by controlling the oxygen functionality, the GO was subjected to $O_3$ treatment prior to electrophoretic deposition (EPD). During thermal reduction of the GO in the nanocomposites, the Sn nanoparticles were reduced in size, along with the formation of SnO and/or $SnO_2$ at a small fraction, relying on the oxygen functionalities of the GO. The variation in the duration of time for the $O_3$ irradiation resulted in a small change in total oxygen content, but in a significantly different fraction of each functional group in the GO, which influenced the Sn nanoparticle size and the amount of SnO (and/or $SnO_2$). As a result, the EPD films prepared with the GO that possessed the least amount of carboxylic groups (made by treating GO in an $O_3$ environment for 3 h) showed the best performance, when compared with the nanocomposites composed of untreated GO or GO that was $O_3$-treated for a duration of less than 3 h.

• Journal of the Semiconductor & Display Technology
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• v.7 no.4
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• pp.19-22
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• 2008

Thin film has been an increasing important subject of intensive research, owing to the fact that these films possess desirable optical, electrical and electrochemical properties for uses in many semi-conducting nano-crystal applications, such as light-emitting diodes, lasers and solar cell applications. Here, ZnSe thin films were deposited by electrochemical method for the applications of light emitting diode. Electrochemical deposition of ZnSe thin film is not easy, because of the high difference of reduction potential between zinc ion and selenium acid. In order to handle the band gap of ZnSe crystal thin films easily, electrochemical methods are promising to manufacture these films economically. Therefore we have investigated the present study to characterize zinc selenide thin films deposited on ITO glass plates electrochemically. The luminescent properties of ZnSe films have been evaluated by UV-Vis spectrometer and luminescence spectrometer. And the morphology of the film surface has been discussed qualitatively from SEM images.

• Bulletin of the Korean Chemical Society
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• v.28 no.11
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• pp.2056-2060
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• 2007

A successful combination of “oxygen-assisted chemical vapor deposition (CVD) process” and Co catalyst nanoparticles to grow highly pure single walled carbon nanotubes (SWNTs) was demonstrated. Recently, it was reported that addition of small amounts of oxygen during CVD process dramatically increased the purity and yield of carbon nanotubes. However, this strategy could not be applied for discrete Fe nanoparticle catalysts from which appropriate yields of SWNTs could be grown directly on solid substrates, and fabricated into field effect transistors (FETs) quite efficiently. The main reason for this failure is due to the carbothermal reduction which results in SiO2 nanotrench formation. We found that the oxygen-assisted CVD process could be successfully applied for the growth of highly pure SWNTs by switching the catalyst from Fe to Co nanoparticles. The topological morphologies and p-type transistor electrical transport properties of the grown SWNTs were examined by using atomic force microscope (AFM), Raman, and from FET devices fabricated by photolithography.

• Journal of Powder Materials
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• v.19 no.1
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• pp.6-12
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• 2012

Electricity is generated by the combined reactions of hydrogen oxidation and oxygen reduction which occur on the Pt/C catalyst surface. There have been lots of researches to make high performance catalysts which can reduce Pt utilization. However, most of catalysts are synthesized by wet-processes and a significant amount of chemicals are emitted during Pt/C synthesis. In this study, Pt/C catalyst was produced by arc plasma deposition process in which Pt nano-particles are directly deposited on carbon black surfaces. During the process, islands of Pt nano-particles were produced and they were very fine and well-distributed on carbon black surface. Compared with a commercialized Pt/C catalyst (Johnson & Matthey), finer particle size, narrower size distribution, and uniform distribution of APD Pt/C resulted in higher electrochemical active surface area even at the less Pt content.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.593-597
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• 2005

FIB equipment can perform sputtering and chemical vapor deposition simultaneously. It is very advantageously used to fabricate a micro structure part having 3D shape because the minimum beam size of ${\phi}$ 10nm and smaller is available. Currently FIB is not being applied in the fabrication of this micro part because of some problems to redeposition and charging effect of the substrate causing reduction of accuracy with regards to shape and productivity. Furthermore, the prediction of the material removal rate information should be required but it has been insufficient for micro part fabrication. The paper have the targets that are FIB-CVD characteristic analysis and minimum line pattern resolution achievement fur 3D micro fabrication. We make conclusions with the analysis of the results of the experiment according to beam current, pattern size and scanning parameters. CVD of 8 pico ampere shows superior CVD yield but CVD of 1318 pico ampere shows the pattern sputtered. And dwell time is dominant parameter relating to CVD yield.

• Journal of the Korean institute of surface engineering
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• v.54 no.3
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• pp.133-138
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• 2021

Ternary Ti-X-N coatings, where X = Al, Si, Cr, O, etc., have been widely used for machining tools and cutting tools such as inserts, end-mills, and etc. Ti-Al-N-O coatings were deposited onto silicon wafer and WC-Co substrates by a cathodic arc evaporation (CAE) technique at various negative substrate bias voltages. In this study, the influence of substrate bias voltages during deposition on the microstructure and mechanical properties of Ti-Al-N-O coatings were systematically investigated to optimize the CAE deposition condition. Based on results from various analyses, the Ti-Al-N-O coatings prepared at substrate bias voltage of -80 V in the process exhibited excellent mechanical properties with a higher compressive residual stress. The Ti-Al-N-O (-80 V) coating exhibited the highest hardness around 30 GPa and elastic modulus around 303 GPa. The improvement of mechanical properties with optimized bias voltage of -80 V can be explained with the diminution of macroparticles, film densification and residual stress induced by ion bombardment effect. However, the increasing bias voltage above -80 V caused reduction in film deposition rate in the Ti-Al-N-O coatings due to re-sputtering and ion bombardment phenomenon.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.2
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• pp.172-177
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• 2022

The quench voltage of the second-generation superconducting wire is affected by the resistivity characteristics of the stabilization layer. The specific resistance of the stabilization layer can be changed by the deposition process using RF magnetron sputtering. In this paper, a thin film made of a homogeneous material (Ag) and a dissimilar material (Cu) was deposited on the stabilization layer of the second-generation superconducting wire through RF magnetron sputtering. We found that the specific resistance was reduced by increasing the thickness of the stabilization layer. The reduction in the resistivity of the stabilization layer led to a decrease in the quench voltage of the second-generation superconducting wire. We suggest that various characteristic changes of the second-generation superconducting wire can be expected through the successful change in the resistivity of the stabilization layer of the proposed deposition process.

• Analytical Science and Technology
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• v.36 no.2
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• pp.80-88
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• 2023

Fingerprints play a crucial role in the identification of potential suspects in criminal cases. However, determining the actual time, i.e., the time at which the fingermark was deposited, is challenging. Herein, we investigated the persistence and aging of fingerprints over time by observing the time evolution of latent fingerprints on a polystyrene box stored in a dark room. Fingerprint samples that were stored for up to two years could be detected with maximum accuracy using a black iron-oxide-based emulsion (black emulsion). To estimate the time of fingerprint deposition, fingerprint aging was studied by analyzing the lipid components of the fingerprints after their development. Cholesterol and squalene were selected as indicators of fingerprint aging, and their ratio was estimated to assess aging. In the case of fingerprint samples stored in a dark room for up to one month after deposition, the cholesterol/squalene ratio was approximately 0.01; it increased gradually to ≥ 0.1 over six months. A substantial reduction in the levels of cholesterol and squalene from the initial levels was also noted. Cholesterol and squalene were not detected after one year of storage. Thus, the extent of aging could be determined by analyzing the aging indicators for up to six months. Two cases that could cause error in the estimation of the fingerprint deposition time, namely, heating of the fingerprint sample before development and storage of the developed fingerprints in a dark room, were also investigated.