Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)
- Volume 7 Issue 4
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- Pages.19-22
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- 2008
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- 1738-2270(pISSN)
Structural and luminescent properties of ZnSe thin films by electrochemical deposition
전기화학적 전착에 의한 ZnSe박막 구조 및 발광특성
- Kim, Hwan-Dong (Department of Chemical Engineering, Kwangwoon University) ;
- Choi, Kil-Ho (Department of Chemical Engineering, Kwangwoon University) ;
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Yoon, Do-Young
(Department of Chemical Engineering, Kwangwoon University)
- Published : 2008.12.30
Abstract
Thin film has been an increasing important subject of intensive research, owing to the fact that these films possess desirable optical, electrical and electrochemical properties for uses in many semi-conducting nano-crystal applications, such as light-emitting diodes, lasers and solar cell applications. Here, ZnSe thin films were deposited by electrochemical method for the applications of light emitting diode. Electrochemical deposition of ZnSe thin film is not easy, because of the high difference of reduction potential between zinc ion and selenium acid. In order to handle the band gap of ZnSe crystal thin films easily, electrochemical methods are promising to manufacture these films economically. Therefore we have investigated the present study to characterize zinc selenide thin films deposited on ITO glass plates electrochemically. The luminescent properties of ZnSe films have been evaluated by UV-Vis spectrometer and luminescence spectrometer. And the morphology of the film surface has been discussed qualitatively from SEM images.