• Transactions on Electrical and Electronic Materials
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• v.6 no.1
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• pp.1-5
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• 2005

Continued scaling of MOS devices requires the formation of the ultra shallow and very heavily doped junction. The simulation and experiment results show that the degradation of pMOS performance in logic and SRAM pMOS devices due to the excessive diffusion of the tail and a large amount of dose loss in the extension region. This problem comes from the high-temperature long-time deposition process for forming the spacer and the presence of fluorine which diffuses quickly to the $Si/SiO_{2}$ interface with boron pairing. We have studied the method to improve the pMOS performance that includes the low-energy boron implantation, spike annealing and device structure design using TCAD simulation.

• Nuclear Engineering and Technology
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• v.53 no.8
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• pp.2652-2660
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• 2021

The gamma-ray exposure doses in decontamination operation after a nuclear accident were evaluated with a consideration of various geometrical conditions and specific gamma-ray energies. The calculation domain is organized with three residence types and each form is divided into two kinds of geometrical arrangements. The position-wise air KERMA values were calculated with an assumption of evenly distributed gamma-ray source based on Monte Carlo radiation transport analysis using the MCNP code. The radioactivity is initially set to be unity to be multiplied by the deposition value measured in the actual accident condition. The workforce data set depending on the target object was determined by modifying the Fukushima report. The external exposure doses for decontamination workers were derived from the calculated KERMA values and the workforce analysis. These results can be used to efficiently determine the workforce required by the characteristics of the area and the structure to be decontaminated within the dose limits.

• Journal of Pharmaceutical Investigation
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• v.38 no.5
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• pp.325-329
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• 2008

To enhance the skin delivery of genistein (GT), a soybean isoflavone having anti oxidative activity, comparative formulation studies including liposomes were carried out. GT-loaded conventional and elastic liposomal gel showed the enhanced skin deposition and photoprotection effect as well, in comparison to GT suspension. Elastic liposomes composed of soybean phosphatidylcholine and sodium deoxycholate (85:15, w/w%) were superior to conventional liposomes and were of characteristics as follows: about 130 nm in size; 85% encapsulation efficiency of GT; 5.8% skin deposition of applied dose; 40% inhibition effect on UVB-induced $H_2O_2$ production. Photoprotection effect was closely related to skin deposition of GT. In conclusion, it is possible to suggest that elastic liposomes could be a promising nanocarrier system for efficient skin delivery.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.190-193
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• 2002

The processing technology of organic thin-film transistors (Ons) performances have improved fur the last decade. Gate insulator layer has generally used inorganic layer, such as silicon oxide which has properties of a low electrical conductivity and a high breakdown field. However, inorganic insulating layers, which are formed at high temperature, may affect other layers termed on a substrate through preceding processes. On the other hand, organic insulating layers, which are formed at low temperature, dose not affect pre-process. Known wet-processing methods for fabricating organic insulating layers include a spin coating, dipping and Langmuir-Blodgett film processes. In this paper, we propose the new dry-processing method of organic gate dielectric film in field-effect transistors. Vapor deposition polymerization (VDP) that is mainly used to the conducting polymers is introduced to form the gate dielectric. This method is appropriate to mass production in various end-user applications, for example, flat panel displays, because it has the advantages of shadow mask patterning and in-situ dry process with flexible low-cost large area displays. Also we fabricated four by four active pixels with all-organic thin-film transistors and phosphorescent organic light emitting devices.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.322-325
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• 2005

The shrinking critical dimensions of modern technology place a heavy requirement on optimizing feature shapes at the micro- and nano scale. In addition, the use of ion beams in the nano-scale world is greatly increased by technology development. Especially, Focused ion Beam (FIB) has a great potential to fabricate the device in nano-scale. Nevertheless, FIB has several limitations, surface swelling in low ion dose regime, precipitation of incident ions, and the re-deposition effect due to the sputtered atoms. In recent years, many approaches and research results show that the re-deposition effect is the most outstanding effect to overcome or reduce in fabrication of micro and nano devices. A 2D string based simulation software AMADEUS-2D $(\underline{A}dvanced\;\underline{M}odeling\;and\;\underline{D}esign\;\underline{E}nvironment\;for\;\underline{S}putter\;Processes)$ for ion milling and FIB direct fabrication has been developed. It is capable of simulating ion beam sputtering and re-deposition. In this paper, the 2D FIB simulation is demonstrated and the characteristics of ion beam induced direct fabrication is analyzed according to various parameters. Several examples, single pixel, multi scan box region, and re-deposited sidewall formation, are given.

• Journal of Radiation Protection and Research
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• v.43 no.4
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• pp.131-136
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• 2018

Background: We investigated the current characteristics of a thin-film Ag electrode on a chemical vapor deposition (CVD) diamond. The CVD diamond is widely recognized as a radiation detection material because of its high tolerance against high radiation, stable response to various dose rates, and good sensitivity. Additionally, thin-film Ag has been widely used as an electrode with high electrical conductivity. Materials and Methods: Considering these properties, the thin-film Ag electrode was deposited onto CVD diamonds with varied deposition thicknesses (${\fallingdotseq}50/98/152/257nm$); subsequently, the surface thickness, surface roughness, leakage current, and photo-current were characterized. Results and Discussion: The leakage current was found to be very low, and the photo-current output signal was observed as stable for a deposited film thickness of 98 nm; at this thickness, a uniform and constant surface roughness of the deposited thin-film Ag electrode were obtained. Conclusion: We found that a CVD diamond radiation detector with a thin-film Ag electrode deposition thickness close to 100 nm exhibited minimal leakage current and yielded a highly stable output signal.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.753-756
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• 1991

This paper aimed to analyse dose sensitivity to the controllable parameters of in-door radon $(^{222}Rn)$ and its decay products(Rn-D) by applying the input-output linear system theory. Physical behaviors of $^{222}Rn$ & Rn-D were analyzed in terms of $^{222}Rn$ gas generation, -migation and - infiltration to indoor environments, and the performance output-function(i.e. mean dose equivalent to Tracho-Bronchial(TB) lung region was assessed to the following ranges of the controllable parameters; a) the ventilation rate constant $({\lambda}_v)$ : $0{\sun}500[h^{-1}]$. b) the attachment rate constant$({\lambda}_a)$ : 0-500 $[h^{-1}]$. c) deposition rate constant $({\lambda}{_{d}^{u}})$: 0-50$[h^{-1}]$. A linear input-output model was reconstructed from the original models in literatures, as follows, which was modified into the matrices consisting of 111 nodal equations. a) indoor ${222}Rn$ & Rn-D Behaviour: jacobi- Porstendorfer- Bruno model. b) lung dosimerty : Jacobi-Eisfeld model. Some of the major findings, which identify the effectiveness of this model, were as follows. a) ${\lambda}_v$ is most effective, dominant controllable parameters in dose reduction, if mechanical ventilation is applied. b) ${\lambda}_v$, depending on the air particle-concentration, reduces the dose somewhat within ${\lambda}_v$<1 $h^{-1}R range. However, the dose increases conversely, ${\lambda}_v$>1 $h^{-1}R range range. c) ${\lambda}{_{d}^{4}}$ reduces the dose linearly as ${\lambda}_v$ dose. Such dose(z-axis) sentivities are shown with three-dimensional plots whoes x,y-axes are combined 2out the 3 parameter${\lambda}_v{\lambda}_s,\;{\lambda}_d^s$.

• Journal of Radiation Protection and Research
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• v.45 no.3
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• pp.101-107
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• 2020

Background: An important lesson learned from the Fukushima accident is that the transition to the mid- and long-term phases from the emergency-response phase requires less than a year, which is not very long. It is necessary to know how much radioactive material has been deposited in an urban area to establish mid- and long-term countermeasures after a radioactive accident. Therefore, an urban deposition model that can indicate the site-specific characteristics must be developed. Materials and Methods: In this study, the generalized urban deposition velocity and the subsequent variation in radionuclide contamination were estimated based on the characteristics of the Korean urban environment. Furthermore, the application of the obtained generalized deposition velocity in a hypothetical scenario was investigated. Results and Discussion: The generalized deposition velocities of ¹³⁷Cs, ¹⁰⁶Ru, and ¹³¹I for each residence type were obtained using three-dimensional (3D) modeling. For all residence types, the deposition velocities of ¹³¹I are greater than those of ¹⁰⁶Ru and ¹³⁷Cs. In addition, we calculated the generalized deposition velocities for each residential types. Iodine was the most deposited nuclide during initial deposition. However, the concentration of iodine in urban environment drastically decreases owing to its relatively shorter half-life than ¹⁰⁶Ru and ¹³⁷Cs. Furthermore, the amount of radioactive material deposited in nonresidential areas, especially in parks and schools, is more than that deposited in residential areas. Conclusion: In this study, the generalized urban deposition velocities and the subsequent deposition changes were estimated for the Korean urban environment. The 3D modeling was performed for each type of urban residential area, and the average deposition velocity was obtained and applied to a hypothetical accident. Based on the estimated deposition velocities, the decision-making systems can be improved for responding to radioactive contamination in urban areas. Furthermore, this study can be useful to predict the radiological dose in case of large-scale urban contamination and can support decision-making for long-term measurement after nuclear accident.

• Journal of Radiation Protection and Research
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• v.23 no.4
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• pp.243-249
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• 1998

The methodology for justification and optimization of the countermeasures related with contamination management of milk was designed based on the cost and benefit analysis. The application results were discussed for the deposition on August 15, when pasture is fully developed in Korean agricultural conditions. A dynamic food chain model DYNACON was used to estimate the time-dependent radioactivity of milk after the deposition. The considered countermeasures are (1) the ban of milk consumption (2) the substitution of clean fodder, which are effective in reducing the ingestion dose as well as simple and easy to carry out in the first year after the deposition. The total costs of the countermeasures were quantitatively estimated in terms of cost equivalent of doses and monetary costs. It is obvious that a fast reaction after the deposition is an important factor in cost effectiveness of the countermeasures. In most cases, the substitution of clean fodder was more effective countermeasure than the ban of consumption. A fast reaction after the deposition made longer justifiable/optimal duration of the countermeasure.

• Korean Journal of Materials Research
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• v.13 no.1
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• pp.43-47
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• 2003

As and BF$_2$dopants are implanted for the formation of source/drain with dose of 1${\times}$10$^{15}$ ions/$\textrm{cm}^2$∼5${\times}$10$^{15}$ ions/$\textrm{cm}^2$ then formed cobalt disilicide with Co/Ti deposition and doubly rapid thermal annealing. Appropriate ion implantation and cobalt salicide process are employed to meet the sub-0.13 $\mu\textrm{m}$ CMOS devices. We investigated the process results of sheet resistance, dopant redistribution, and surface-interface microstructure with a four-point probe, a secondary ion mass spectroscope(SIMS), a scanning probe microscope (SPM), and a cross sectional transmission electron microscope(TEM), respectively. Sheet resistance increased to 8%∼12% as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{V}$ , while sheet resistance uniformity showed very little variation. SIMS depth profiling revealed that the diffusion of As and B was enhanced as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{＋}$ . The surface roughness of root mean square(RMS) values measured by a SPM decreased as dose increased in $CoSi_2$$n^{＋}$ , while little variation was observed in $CoSi_2$$p^{＋}$ . Cross sectional TEM images showed that the spikes of 30 nm∼50 nm-depth were formed at the interfaces of $CoSi_2$$n^{＋}$ / and $CoSi_2$/$p^{＋}$, which indicate the possible leakage current source. Our result implied that Co/Ti cobalt salicide was compatible with high dose sub-0.13$\mu\textrm{m}$ process.