• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.318-326
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• 1996

This study is to investigate a chemical vapor deposition technique of copper film which is expected to be more useful as metallizations of microcircuit fabrication. An experimental equipment was designed and set-up for this study, and a Cu-precursor used that is a metal-organic compound, named (hfac)Cu(I)VTMS ; (hevaflouoroacetylacetonate trimethyvinylsilane copper). Base pressure of the experimental system is in $10^{-6}$ Torr, and the chamber pressure and the substrate temperature can be controlled in the system. Before the deposition of copper thin film, tungsten or titanium nitride film was deposited onto the silicon wafer. Helium has been used as carrier gas to control the deposition rate. As a result, deposition rate was measured as $1,800\;{\AA}/min$ at $220^{\circ}C$ which is higher than the results of previous studies, and the average surface roughness was measured as about $200\;{\AA}$. A deposition selectivity was observed between W or TiN and $SiO_{2}$ substrates below $250^{\circ}C$, and optimum results are observed at $180^{\circ}C$ of substrate temperature and 0.8 Torr of chamber pressure.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.20-27
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• 1997

We have investigated the formation techniques of copper thin films which would be useful for sub-quarter-micron integrated circuits. A chemical vapor deposition technology has been tried for the better side wall formation of the thin films, and a metal organic compound, named (hface)Cu(VTMS) (hexafluoroacetylacetonate vinyltrimethylsilane copper(I)) was used as the precursors. We have deposited the copper thin films on TiN and $SiO_2$substrates. The film resistivity and deposition selectivity have been measured as functions of substrate temperature and chamber pressure. Best electrical properties were obtained at $180^{\circ}C$ of substrate temperature and 0.6 Torr of chamber pressure. Under the optimum deposition conditions, polycrystalline copper structures were observed to be grown, and the deposition rate of 120 nm/min was measured. The electrical resistivity as low as 0.25$mu \Omega$.cm, and the surface roughness of 15.5 nm were also measured. These are the suitable electrical and material properties required in the sub-quarter-micron device fabrication. Also, in the substrate temperature range of 140-$250^{\circ}C$, high deposition selectivity was observed between TiN and $SiO_2$.

• Journal of Korean Society for Atmospheric Environment
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• v.21 no.E3
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• pp.75-85
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• 2005

A mathematical sensitivity analysis of the flow-through dynamic flux chamber technique, which has been utilized usually for various trace gas flux measurement from soil and water surface, was performed in an effort to provide physical and mathematical understandings of parameters essential for the NO flux calculation. The mass balance equation including chemical reactions was analytically solved for the soil NO flux under the steady state condition. The equilibrium concentration inside the chamber, $C_{eq}$, was found to be determined mainly by the balance between the soil flux and dilution of the gas concentration inside the chamber by introducing the ambient air. Surface deposition NO occurs inside the chamber when the $C_{eq}$ is greater than the ambient NO concentration ($C_{0}$) introducing to the chamber; NO emission from the soil occurs when the $C_{eq}$ is less than the ambient NO concentration. A sensitivity analysis of the significance of the chemical reactions of NO with the reactive species (i.e. $HO_{2},/CH_{3}O_{2},/O_{3}$) on the NO flux from soils was performed. The result of the analysis suggests that the NO flux calculated in the absence of chemical reactions and wall loss could be in error ranges from 40 to $85\%$ to the total flux.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.208-208
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• 2012

최근 환경문제가 많이 제기되면서 친환경적 운송수단인 자전거 개발과 관련하여 다양한 기술개발이 이루어지고 있다. 그 중 고부가가치의 서스펜션 포크의 프레임에 고기능성 표면처리로 Arc ion plating deposition system (AIPDS)을 이용하여 부식, 내마모 특성이 뛰어난 TiN 박막을 증착시켰다. AIPDS는 기존의 arc system과 달리 다원계 소재 코팅 공정조건 확립을 위하여 chamber wall에 2개의 rectangular type sputter source를 장착하고 소재의 pre-treatment 용 linear type ion source를 설치하였다. 장비의 Chamber 중앙에는 pipe형 arc cathode를 설치하였으며, 그 주위를 anode 역할을 하는 copper 코일로 감아 이는 발생한 arc를 target인 cathode 축을 중심으로 방향성을 가지고 회전하여 진행 할 수 있도록 유도 하였다. 이 시스템에서 증착된 TiN 박막은 bias 전압 변화에 따른 박막의 구조 및 물성을 평가하였다. XRD 장비를 통하여 TiN 박막의 상분석을 진행하였고, 마모테스터, 원자현미경, 마이크로 비커스 경도기 등을 이용하여 기계적 특성을 평가하였다.

• Journal of the Korean Institute of Gas
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• v.15 no.3
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• pp.74-78
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• 2011

$BF_3$ gas has been used for semiconductor manufacturing process and applied in plasma etching, chemical vapor deposition, chamber cleaning processes etc,. $BF_3$ provides Boron and acts as a p-type doping in electrode in semiconductor. In this study, we investigate thermaldecomposition of alkali-boron complexes and suggest a simple way to produce $BF_3$ from $NaBF_4$ and $KBF_4$.

• Journal of Surface Science and Engineering
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• v.33 no.2
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• pp.69-76
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• 2000

The rf plasma chemical vapor deposition is a common method employed for diamond or amorphous carbon deposition. Diamond possesses the strongest bonding, as exemplified by a number of unique properties-extraordinary hardness, high thermal conductivity, and a high melting tempera tore. Therefore, it is very important to investigate the synthesis of semiconducting diamond and its use as semiconductor devices. An inductively coupled rf plasma CVD system for producing amorphous carbon films were developed. Uniform temperature and concentration profiles are requisites for the deposition of high quality large-area films. The system consists of rf matching network, deposition chamber, pumping lines for gas system. Gas mixtures with methane, and hydrogen have been used and Si (100) wafers used as a substrate. Amorphous carbon films were deposited with methane concentration of 1.5% at the process pressure of S torr~20 torr, and process temperature of about $750^{\circ}C$. The nucleation and growth of the amorphous carbon films have been characterized by several methods such as SEM and XRD.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.7 no.3
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• pp.521-527
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• 1995

The average particle deposition velocity toward a vertical wafer surface in a vertical airflow chamber was measured by a wafer surface scanner(PMS Model SAS-3600). Polystyrene latex(PSL) spheres with diameters between 0.3 and $0.8{\mu}m$ were used. To examine the effect of the airflow velocity on the deposition velocity, experiments were conducted for three vertical airflow velocities ; 20, 30, 50cm/s. Experimental data of particle deposition velocity were compared with those given by prediction model suggested by Liu and Ahn(1987).

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.279-282
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• 2002

In this paper, we discuss influence of process condition on contact resistance in WSix deposition process. In the WSix deposition process, we confirmed that word line to bit line contact resistance(WBCR) due to temperature of word line WSix deposition among various process condition split experiment. RTP treatment, d-poly ion implantation dose and thickness was estimated a little bit influence on contact resistance. Also, life time of shower head in the process chamber for WSix deposition related to contact resistance. The results obtained in this study are applicable to process control and electrical characteristics for high reliability and high density DRAM's.

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.139-144
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• 2014

GaN deposition equipment and processes for the fabrication of white LEDs (Light Emitting Diode) using MOCVD (Metal Organic Chemical Vapor Deposition) were numerically modeled to analyze the effects of a reactive gas introduction strategy. The source gases, TMGa and $NH_3$, were injected from a shower head at the top of the chamber; the carrier gases, $H_2$ or $N_2$, were introduced using two types of injection structures: vertical and horizontal. Wafers sat on the holder at a radial distance between 100 mm and 150 mm. The non-uniformity of the deposition rates for vertical and horizontal injection were 4.3% and 3.1%, respectively. In the case of using $H_2$ as a carrier gas instead of $N_2$, the uniform deposition zone was increased by 20%.

• Transactions on Electrical and Electronic Materials
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• v.4 no.5
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• pp.33-37
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• 2003

This study was performed to investigate the deposition mechanism of SiO$_2$ by ArF excimer laser(l93nm) CVD with Si$_2$H$\_$6/ and N$_2$O gas mixture and evaluate laser CVD quantitatively by modeling. With ArF excimer laser CVD, thin films can be deposited at low temperature(below 300$^{\circ}C$), with less damage and good uniformity owing to generation of conformal reaction species by singular wavelength of the laser beam. In this study, new model of SiO$_2$ deposition process by laser CVD was introduced and deposition rate was simulated by computer with the basis on this modeling. And simulation results were compared with experimental results measured at various conditions such as reaction gas ratio, chamber pressure, substrate temperature and laser beam intensity.