Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
권호 표지

Influence of Process Condition on Contact Resistance in WSix Deposition

WSix 증착에서 공정조건이 contact 저항에 미치는 영향

  • 정양희 (여수대학교 전기공학과) ;
  • 강성준 (여수대학교 반도체ㆍ응용물리학과) ;
  • 강희순 (하이닉스 반도체 공정기술팀)
  • Published : 2002.05.01
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper, we discuss influence of process condition on contact resistance in WSix deposition process. In the WSix deposition process, we confirmed that word line to bit line contact resistance(WBCR) due to temperature of word line WSix deposition among various process condition split experiment. RTP treatment, d-poly ion implantation dose and thickness was estimated a little bit influence on contact resistance. Also, life time of shower head in the process chamber for WSix deposition related to contact resistance. The results obtained in this study are applicable to process control and electrical characteristics for high reliability and high density DRAM's.

Keywords