• Progress in Superconductivity
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• v.7 no.2
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• pp.120-129
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• 2006

We comparatively studied the epitaxial growth conditions of $CeO_2$ and $Y_2O_3$ thin buffers on textured Ni tapes using rf magnetron sputtering and investigated the feasibility of getting a single mixture layer or sequential layers of $CeO_2$ and $Y_2O_3$ for more simplified buffer architecture. All the buffer layers were first deposited using the reducing gas of $Ar/4%H_2$ and subsequently the reactive gas mixture of Ar and $O_2$, The crystalline quality and biaxial alignment of the films were investigated using X-ray diffraction techniques (${\Theta}-2{\Theta},\;{\phi}\;and\;{\omega}\;scans$, pole figures). The $CeO_2$ single layer exhibited well developed (200) epitaxial growth at the condition of $10%\;O_2$ below an $450^{\circ}C$, but the epitaxial property was decreased with increasing the layer thickness. $Y_2O_3$ seldom showed optimum condition for (400) epitaxial growth. The sequential architecture of $CeO_2/Y_2O_3/CeO_2$ having good epitaxial property was achieved by sputtering at a temperature of $700^{\circ}C$ on the initial $CeO_2$ bottom layer sputtered at $400^{\circ}C$. Cracking of the sputtered buffer layers was seldom observed except the double layer structure of $CeO_2/Y_2O_3$.

• Journal of Korean Society on Water Environment
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• v.20 no.5
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• pp.494-499
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• 2004

Growth in population and urbanization has progressively increased the loadings of pollutants from non-point sources as well as point sources. Therefore, it is necessary to manage both point and non-point sources contaminations for protecting water environment and improving water quality. This study investigated the characteristics of pollutant release over a wide range of rainfall intensities as a requisite to control road runoff that accounts for the largest portion of non-point source contamination in urban areas. Samples of runoff rainwater collected from real road surfaces were analyzed for physicochemical parameters such as pH, suspended solids, and heavy metals. A experimental model road ($30cm{\times}30cm$) was also used to evaluate wash-off properties of pollutants deposited on the surface as functions of time and rainfall intensity. Analysis of runoff samples on rain events showed that the pollutant wash-off patterns for heavy metal and suspended solids were similar. This implies that the particles in rainwater adsorb heavy metals. Experiments using the model road made of impervious asphalt demonstrate a strong first flush phenomenon. At high rainfall intensity, approximately 80% of total pollutants were released within 15 min. The pollutant wash-off rates rapidly increase from 9 mm/hr to 12 mm/hr of rainfall intensity and decrease over 12 mm/hr of rainfall intensity.

• Journal of the Korean Vacuum Society
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• v.17 no.3
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• pp.234-239
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• 2008

Tungsten and rhodium target tube for a 40 kV x-ray transmission anode was developed to apply to the hand-held XRF(X-Ray Fluorescence) apparatus and its characteristics were evaluated. From the measurement of the energy distribution and dose of x-ray, it was confirmed that our results were good agreements with the known ones. The optimum thickness of metal film deposited on Be window to extract the maximum dose were $2.6{\mu}m$ and $2.7{\mu}m$ in case of W-target tube and Rh-target tube, respectively. When it was continuously worked during 30 min. at 40 kV in tube voltage and at $60{\mu}A$ in tube current, the temperature at target did not exceed $50^{\circ}C$. Our results reveals that the 40 kV x-ray transmission anode tube can be applied to the hand-held XRF apparatus.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.207-207
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• 2011

Amorphous transparent oxide semiconductors (a-TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). Recently, Nomura et al. demonstrated high performance amorphous IGZO (In-Ga-Zn-O) TFTs.1 Despite the amorphous structure, due to the conduction band minimum (CBM) that made of spherically extended s-orbitals of the constituent metals, an a-IGZO TFT shows high mobility.2,3 But IGZO films contain high cost rare metals. Therefore, we need to investigate the alternatives. Because Aluminum has a high bond enthalpy with oxygen atom and Alumina has a high lattice energy, we try to replace Gallium with Aluminum that is high reserve low cost material. In this study, we focused on the electrical properties of IZO:Al thin films as a channel layer of TFTs. IZO:Al were deposited on unheated non-alkali glass substrates (5 cm ${\times}$ 5 cm) by magnetron co-sputtering system with two cathodes equipped with IZO target and Al target, respectively. The sintered ceramic IZO disc (3 inch ${\phi}$, 5 mm t) and metal Al target (3 inch ${\phi}$, 5 mm t) are used for deposition. The O2 gas was used as the reactive gas to control carrier concentration and mobility. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of IZO:Al thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.211-211
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• 2012

The electrical loss of the photo-generated carriers is dominated by the recombination at the metal- semiconductor interface. In order to enhance the performance of the solar cells, many studies have been performed on the surface treatment with passivation layer like SiN, SiO2, Al2O3, and a-Si:H. In this work, Al2O3 thin films were investigated to reduce recombination at surface. The Al2O3 thin films have two advantages, such as good passivation properties and back surface field (BSF) effect at rear surface. It is usually deposited by atomic layer deposition (ALD) technique. However, ALD process is a very expensive process and it has rather low deposition rate. In this study, the ICP-assisted reactive magnetron sputtering method was used to deposit Al2O3 thin films. For optimization of the properties of the Al2O3 thin film, various fabrication conditions were controlled, such as ICP RF power, substrate bias voltage and deposition temperature, and argon to oxygen ratio. Chemical states and atomic concentration ratio were analyzed by x-ray photoelectron spectroscopy (XPS). In order to investigate the electrical properties, Al/(Al2O3 or SiO2,/Al2O3)/Si (MIS) devices were fabricated and characterized using the C-V measurement technique (HP 4284A). The detailed characteristics of the Al2O3 passivation thin films manufactured by ICP-assisted reactive magnetron sputtering technique will be shown and discussed.

• Korean Journal of Materials Research
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• v.1 no.1
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• pp.17-22
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• 1991

Tantalum thin films were deposited by DC sputtering on heavily doped single Si substrates. These substrates were treated by means of a rapid thermal annealing (RTA) under Ar atmosphere for various temperatures($600-1100^{\circ}C$). The silicide formation and the impurities behavior in the substrate are studied by means of XRD, SEM, four-point probe, HP4145, and SIMS. The formation of $TaSi_2$ started at $800^{\circ}C$ for all kinds of impurities and the entire Tantalum thin metal films were transformed into $TaSi_2$ above $1000^{\circ}C$ Also the contact resistance for $TaSi_2/P^+$ region had a low value; $22{\Omega}$, at contact site of $0.9{\times}0.9(\mu\textrm{m^2}$), and implanted impurities were diffused out into the $TaSi_2$ for rapid thermal annealing.

• Journal of Sensor Science and Technology
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• v.8 no.4
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• pp.320-326
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• 1999

A small cartridge, with a nozzle system for washing off the dirt from the surfaces of sensing gates, was fabricated. The proposed nozzle structure was designed for cartridge by using the simulation tool of fluid (CFD-ACE). Whole size of the fabricated cartridge by using micromachining techniques is about $2.6\;cm{\times}1.5\;cm$, the size of the washing nozzle is $0.2\;mm{\times}0.6\;mm$ and its dead volume is only about $20\;{\mu}l$. A micro-reference electrode was achieved by employing a differential system with ISFETs/QRE (quasi-reference electrode)/REFET (reference field-effect transistor). Metal electrodes was deposited at both ends of blowing channel were used to check the presence of bubble in the microchannel. The pH-ISFET was inserted into the fabricated cartridge and the washing effect of the nozzle system in cartridge was invested.

• Journal of Sensor Science and Technology
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• v.15 no.1
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• pp.58-64
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• 2006

In this study, we describe a low-temperature wafer-level thermocompression bonding using electroplated gold seal line and bonding pads by electroplating method for RF-MEMS devices. Silicon wafers, electroplated with gold (Au), were completely bonded at $320^{\circ}C$ for 30 min at a pressure of 2.5 MPa. The through-hole interconnection between the packaged devices and external terminal did not need metal filling process and was made by gold films deposited on the sidewall of the throughhole. This process was low-cost and short in duration. Helium leak rate, which is measured to evaluate the reliability of bonded wafers, was $2.7{\pm}0.614{\times}10^{-10}Pam^{3}/s$. The insertion loss of the CPW packaged was $-0.069{\sim}-0.085\;dB$. The difference of the insertion loss between the unpackaged and packaged CPW was less than -0.03. These values show very good RF characteristics of the packaging. Therefore, gold thermocompression bonding can be applied to high quality hermetic wafer level packaging of RF-MEMS devices.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.82-82
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• 2018

광전소자용 투명전극으로 적용하기 위한 초박형 Al 박막에 대해서 기초연구를 수행하였다. 증착 전 챔버(chamber) 내 기저압력은 $3{\times}10^{-7}Torr$이하로 유지하였으며 Ar 불활성 기체의 유입을 통해 작업압력을 $1{\times}10^{-2}Torr$로 상승시켜 증착을 실시하였다. DC 마그네트론 스퍼터링법을 이용하여 유리기판상에 Al 박막의 증착을 실시하였으며, 박막의 두께가 3-12 nm인 Al 박막을 각각 형성하였다. 두께가 7 nm 일 때 면저항은 $135{\Omega}/{\square}$로 측정되었고 7 nm 이상인 두께의 박막은 두께가 증가할 때 면저항이 점진적으로 감소되는 경향을 확인할 수 있었다. 두께가 10 nm인 박막의 측정된 면저항은 $13.1{\Omega}/{\square}$로 두께 7 nm인 박막과 비교하였을 때 약 10배의 차이를 확인할 수 있었다. 두께 6 nm 이하인 박막은 면저항 측정이 불가능하였는데 이는 SEM 분석 결과, 연속박막을 이루지 못 하였기 때문이라고 결론을 내릴 수 있었으며, 두께 12 nm인 박막까지 완전한 연속박막이 형성되지 않았다. 각각의 박막에서 입자의 크기는 선 교차법(line intercept method)을 이용하여 시편당 평균 120개의 입자에 대한 평균값을 측정하였으며, 이론적으로 예상할 수 있는 바와 같이 두께가 증가할수록 입자크기도 비례하여 증가하게 되는 것을 확인할 수 있었다. 가시광선 파장영역 내 투과도의 경우, 3 nm 두께에서 평균 80% 이상의 투과도가 측정된 데 반하여, 4-5 nm 두께에서 평균 60%로 급격하게 감소되기 시작하며 그 이후, 두께 증가에 따라 투과도가 점진적으로 감소되는 경향을 확인할 수 있었다. 또한 Al 박막은 시간의 경과에 따른 표면의 산화가 진행되어 기존에 측정된 면저항보다 10-60%의 면저항이 증가하였는데 이는 두께가 얇을수록 더 산화의 영향을 많이 받기 때문에 나타난 결과로 보인다. 추후 산화방지막 및 빛반사방지막 층을 초박형 Al박막과 함께 Oxide/Metal/Oxide 구조로 형성하여 위와 같은 현상들을 해결하고 박막물성의 증진을 통해 투명전극에 적용을 목표로 한다.

• Applied Chemistry for Engineering
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• v.31 no.5
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• pp.581-584
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• 2020

The effect of a chemical pretreatment on the surface carbon was investigated using a scanning electron microscope (SEM) and electrochemical methods. Primitive carbon has a reducing power likely due to incompletely oxidized functional groups on the surface. We aim to control this reducing power by chemical treatment and apply for the spontaneous deposition of nanoparticles (NPs). Highly ordered pyrolytic graphite (HOPG) was initially treated with a reducing agent, NaBH4 or an oxidizing agent, KMnO₄, for 5 min. Subsequently, the pretreated carbon was immersed in a platinum (Pt) precursor. Unexpectedly, SEM images showed that the reducing agent increased spontaneous PtNPs deposition while the oxidizing agent decreased Pt loading more as compared to that of using bare carbon. However, the amount of Pt on the carbon obviously decreased by NaBH₄ treatment for 50 min. Secondly, spontaneous reduction on pretreated glassy carbon (GC) was investigated using the catalytic hydrogen evolution reaction (HER). GC electrode treated with NaBH4 for a short and long time showed small (onset potential: -640 mV vs. MSE) and large overpotential for the HER, respectively. Although the mechanism is unclear, the electrochemistry results correspond to the optical data. As a proof-of-concept, these results demonstrate that chemical treatments can be used to design the shapes and amounts of deposited catalytic metal on carbon by controlling the surface state.