• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.12
• /
• pp.942-948
• /
• 2010

In this study we aims to examine the effects of 0.5 mol% $Cr_2O_3$ addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of ZnO-$Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Cr-doped ZBS (ZBSCr) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered on heating in ZBS (Sb/Bi=1.0) by Cr doping. The densification of ZBSCr (Sb/Bi=0.5) system was retarded to $800^{\circ}C$ by unknown Bi-rich phase produced at $700^{\circ}C$. Pyrochlore on cooling was reproduced in all systems. And $Zn_7Sb_2O_{12}$ spinel ($\alpha$-polymorph) and $\delta-Bi_2O_3$ phase were formed by Cr doping. In ZBSCr, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha$ = 7~12) and independent on microstructure according to Sb/Bi ratio. Doping of $Cr_2O_3$ to ZBS seemed to form $Zn_i^{..}$(0.16 eV) and $V^{\bullet}_o$ (0.33 eV) as dominant defects. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one (1.1 eV) and electrically inactive intergranular one (0.95 eV) with temperature.

• Journal of the Korean Ceramic Society
• /
• v.55 no.3
• /
• pp.290-298
• /
• 2018

In order to investigate the effect of thickness on the dielectric and piezoelectric properties of (001) PMN-29PT single crystals, three different types of PMN-29PT samples were prepared using the solid-state single crystal growth (SSCG) method: high density crystal [99%], low density crystal [95%], and high density crystal doped with Mn [98.5%]. When their thickness decreased from 0.5 mm to 0.05 mm, their dielectric constant ($K_3{^T}$), piezoelectric constants ($d_{33}$ and $g_{33}$), and electromechanical coupling factor ($k_t$) decreased continuously. However, their dielectric loss (tan ${\delta}$) increased. The addition of Mn to PMN-PT induced an internal bias electric field ($E_I$), increased the coercive electric field ($E_C$), and prevented local depoling. Therefore, Mn-doped PMN-PT crystals show high stability as well as high performance, even in the form of very thin plates (< 0.2 mm), and thus are suitable for application to high frequency composites, medical ultrasound probes, non-destructive testing devices (NDT), and flexible devices.

• Korean Journal of Materials Research
• /
• v.28 no.3
• /
• pp.182-188
• /
• 2018

Nitrogen (N)-doped protein-based carbon as platinum (Pt) catalyst supports from tofu for oxygen reduction reactions are synthesized using a carbonization and reduction method. We successfully prepare 5 wt% Pt@N-doped protein-based carbon, 10 wt% Pt@N-doped protein-based carbon, and 20 wt% Pt@N-doped protein-based carbon. The morphology and structure of the samples are characterized by field emission scanning electron microscopy and transmission electron micro scopy, and crystllinities and chemical bonding are identified using X-ray diffraction and X-ray photoelectron spectroscopy. The oxygen reduction reaction are measured using a linear sweep voltammogram and cyclic voltammetry. Among the samples, 10 wt% Pt@N-doped protein-based carbon exhibits exellent electrochemical performance with a high onset potential of 0.62 V, a high $E_{1/2}$ of 0.55 V, and a low ${\Delta}E_{1/2}=0.32mV$. Specifically, as compared to the commercial Pt/C, the 10 wt% Pt@N-doped protein-based carbon had a similar oxygen reduction reaction perfomance and improved electrochemical stability.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.6 no.2
• /
• pp.106-113
• /
• 2006

Electrical properties of $Si_{0.88}Ge_{0.12}(C)$ p-MOSFETs have been exploited in an effort to investigate $Si_{0.88}Ge_{0.12}(C)$ channel structures designed especially to suppress diffusion of dopants during epitaxial growth and subsequent fabrication processes. The incorporation of 0.1 percent of carbon in $Si_{0.88}Ge_{0.12}$ channel layer could accomodate stress due to lattice mismatch and adjust bandgap energy slightly, but resulted in deteriorated current-voltage properties in a broad range of operation conditions with depressed gain, high subthreshold current level and many weak breakdown electric field in gateoxide. $Si_{0.88}Ge_{0.12}(C)$ channel structures with boron delta-doping represented increased conductance and feasible use of modulation doped device of $Si_{0.88}Ge_{0.12}(C)$ heterostructures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.6
• /
• pp.538-548
• /
• 2003

We studied effects by Re$_2$O$_3$(R=Dy, Gd, Ho) addition on the properties of Mn-Zn ferrite. The doping concentration range from 0.05 wt% to 0.25 wt%. All samples were prepared by standard fabrication of ceramics. With increasing the rare earth oxides, specific density and initial permeability increased on the whole. But, the tendencies such as upper result had the measured value on limitation and characteristics saturated or decreased properties after that. In case of excessive addition of additive beyond some level, initial permeability properties of ferrite have gone down in spite of anomalous grain. With increasing the content of additive, both the real and imaginary component of complex permeability and the magnetic loss (tan$\delta$) increased. Because the increased rate of real component had higher than imaginary component, magnetic loss increased none the less for increasing the real component related with magnetic permeability. But, the magnetic loss of ferrite doped with the rare earth oxides was lower than that of Mn-Zn ferrite at any rate. The small amount of present rare earth oxides in Mn-Zn ferrite composition led to enhancement of resistivity in bulk, and more so in the grain boundary. It was seem to be due to the formation of mutual reaction such as between iron ions and rare earth element ions.

• Korean Journal of Materials Research
• /
• v.13 no.4
• /
• pp.228-232
• /
• 2003

The effects of$ Nd_2$$O_3$addition on the properties of Mn-Zn ferrite were investigated in the doping concentration range from 0.05 to 0.25 wt%. All samples were prepared by standard fabrication of ferrite ceramics. With increasing the Neodymium oxides, specific density and initial permeability increased on the whole. But, the tendencies such as upper result had the measured value on limitation and characteristics saturated or decreased properties after that. With increasing the content of Neodymium oxides. both the real and imaginary component of complex permeability and the magnetic loss(tan$\delta$) increased. Because reason that magnetic loss increases is high ratio that a real department increases than imaginary department. Magnetic loss increased none the less for increasing the real department related with magnetic permeability. But, the magnetic loss of ferrite doped with the Neodymium oxides were lower than that of none doped Mn-Zn ferrite. The small amount of percent Neodymium oxides in Mn-Zn ferrite composition led to enhancement of resistivity in bulk, and more so in the grain boundary.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.1247-1249
• /
• 2009

We have successfully developed the 22 inch WSXGA+ DLS(Data Line Sharing) Panel driving in 75 Hz. In the large size and high resolution panels, it is very difficult to design the DLS Panels without failure because of the very short charging time and the large signal delay. So, we first investigated the charging order to find the most adequate charging type to the large size and high resolution panels. And then, we optimized the design of DLS in terms of improving the charging properties using the technologies of the Delta-doping TFTs, Cu metal electrodes and optimization of panel design value and the circuit signal timing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.2
• /
• pp.236-241
• /
• 2004

New electrolytes of cubic L $a_2$M $o_2$-x Nbx $O_{9-}$$\delta$/(x=0, 0.05, 0.1, 0.2) were fabricated by a solid-state reaction method and their sintered densities were approximately 93％ of theoretical density. X-ray diffraction analysis and microstructure observation for the sintered specimens were performed. The at complex impedance were measured at 34$0^{\circ}C$ to 93$0^{\circ}C$ in air and fitted with a Solatron ZView program. Their impedance spectra showed big difference below and over the phase transition temperature (58$0^{\circ}C$). The electrical conductivity of L $a_2$M $o_2$ $O_{9}$ was 1.36${\times}$10$^{-2}$ S$cm^{-1}$ / at 817$^{\circ}C$. Comparing to undoped L $a_2$M $o_2$ $O_{9}$ , Nb-doped specimen showed the increase of electrical conductivity due to the aliovalent doping effect..

• Applied Chemistry for Engineering
• /
• v.19 no.5
• /
• pp.477-483
• /
• 2008

$La_{0.7}Sr_{0.3}Co_{0.2}Fe_{0.8}O_{3-{\delta}$ oxide was synthesized by a citrate method and a typical dense membrane of perovskite oxide has been prepared using as-prepared powder by pressing and sintering at $1300^{\circ}C$. Precursor of $La_{0.7}Sr_{0.3}Co_{0.2}Fe_{0.8}O_{3-{\delta}$ prepared by citrate method was investigated by TGA and XRD. Metal-citrate complex in precursor was decomposed into perovskite oxide in the temperature range of $260{\sim}410^{\circ}C$ but XRD results showed $SrCO_3$ existed as impurity at less than $900^{\circ}C$. Electrical conductivity of membrane increased with increasing temperature but then decreased over $700^{\circ}C$ in air atmosphere ($Po_2=0.2atm$) and $600^{\circ}C$ in He atmosphere ($Po_2=0.01atm$) respectively due to oxygen loss from the crystal lattice. The oxygen permeation flux increased with increasing temperature and maximum oxygen permeation flux of $La_{0.7}Sr_{0.3}Co_{0.2}Fe_{0.8}O_{3-{\delta}$ membrane with 1.6 mm thickness was about $0.31cm^3/cm^2{\cdot}min$ at $950^{\circ}C$. The activation energy for oxygen permeation was 88.4 kJ/mol in the temperature range of $750{\sim}950^{\circ}C$. Perovskite structure of membrane was not changed after permeation test of 40 h and the membrane was stable without secondary phase change with 0.3 mol Sr addition.

• Korean Journal of Materials Research
• /
• v.22 no.12
• /
• pp.675-681
• /
• 2012

We aimed to examine the co-doping effects of 1/6 mol% $Mn_3O_4$ and 1/4 mol% $Cr_2O_3$ (Mn:Cr = 1:1) on the reaction, microstructure, and electrical properties, such as the bulk defects and grain boundary properties, of ZnO-$Bi_2O_3-Sb_2O_3$ (ZBS; Sb/Bi = 0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Mn,Cr-doped ZBS, ZBS(MnCr) varistors were controlled using the Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$), ${\alpha}$-spinel ($Zn_7Sb_2O_{12}$), and ${\delta}-Bi_2O_3$ (also ${\beta}-Bi_2O_3$ at Sb/Bi ${\leq}$ 1.0) were detected for all of the systems. Mn and Cr are involved in the development of each phase. Pyrochlore was decomposed and promoted densification at lower temperature on heating in Sb/Bi = 1.0 system by Mn rather than Cr doping. A more homogeneous microstructure was obtained in all systems affected by ${\alpha}$-spinel. In ZBS(MnCr), the varistor characteristics were improved dramatically (non-linear coefficient, ${\alpha}$ = 40~78), and seemed to form ${V_o}^{\cdot}$(0.33 eV) as a dominant defect. From impedance and modulus spectroscopy, the grain boundaries can be seen to have divided into two types, i.e. one is tentatively assigned to ZnO/$Bi_2O_3$ (Mn,Cr)/ZnO (0.64~1.1 eV) and the other is assigned to the ZnO/ZnO (1.0~1.3 eV) homojunction.