• Bulletin of the Korean Mathematical Society
• /
• v.44 no.4
• /
• pp.701-708
• /
• 2007

In this paper we characterize the boundedness, compactness and closedness of the range of the weighted composition operators on Lorentz spaces L(p,q), $1.

• Journal of the Korean Mathematical Society
• /
• v.56 no.3
• /
• pp.703-721
• /
• 2019

The notion of slant H-Toeplitz operator $V_{\phi}$ on the Hardy space $H^2$ is introduced and its characterizations are obtained. It has been shown that an operator on the space $H^2$ is a slant H-Toeplitz if and only if its matrix is a slant H-Toeplitz matrix. In addition, the conditions under which slant Toeplitz and slant Hankel operators become slant H-Toeplitz operators are also obtained.

• Communications of the Korean Mathematical Society
• /
• v.34 no.4
• /
• pp.1229-1243
• /
• 2019

The notion of $k^{th}$-order essentially slant weighted Toeplitz operator on the weighted Lebesgue space $L^2({\beta})$ is introduced and its algebraic properties are investigated. In addition, the compression of $k^{th}$-order essentially slant weighted Toeplitz operators on the weighted Hardy space $H^2({\beta})$ is also studied.

• Journal of the Korean Mathematical Society
• /
• v.59 no.3
• /
• pp.635-648
• /
• 2022

We discuss the wellposedness of the Neumann problem on a half-space for the Kohn-Laplacian in the Heisenberg group. We then construct the Neumann function and explicitly represent the solution of the associated inhomogeneous problem.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.4 no.3
• /
• pp.240-249
• /
• 2004

In the present paper efforts have been made to optimize InAlAs/InGaAs HEMT by enhancing the effective gate voltage ($(V_c-V_off)$) using pulsed doped structure from uniformly doped to delta doped for microwave frequency applications and reliability. The detailed design criteria to select the proper design parameters have also been discussed in detail to exclude parallel conduction without affecting the del ice performance. Then the optimized value of $V_c-V_off$and breakdown voltages corresponding to maximum value of transconductance has been obtained. These values are then used to predict the transconductance and cut-off frequency of the del ice for different channel depths and gate lengths.

• Journal of information and communication convergence engineering
• /
• v.6 no.2
• /
• pp.233-237
• /
• 2008

This paper presents proposal for an application (only for Windows-based Mobile) that can synchronize the Third Generation Windows-based mobile with the prescribed server. This application can be used by mobile users to send information directly to the WAS server wirelessly. In this paper a comparison between Third Generation technology and WLAN ( both are parallel technologies first one embodied by IMT-2000 standards and the second one by ITU Standards) has been made and also a comparison between Wi-Fi and Bluetooth has been made.

• Journal of the Optical Society of Korea
• /
• v.14 no.4
• /
• pp.337-341
• /
• 2010

A high sensitivity fiber optic temperature sensor based on a side-polished fiber (SPF) coupled to a tapered multimode overlay waveguide (MMOW) is proposed and studied. Both tapered and non-tapered MMOW were considered to study the effect of tapering of MMOW on the characteristics of the device and to investigate the criticality of the uniformity of the multimode overlay waveguide over the SPF. Present study shows that tapering of the MMOW can be used to tune the desired wavelength range without any loss in the sensitivity. Sensitivity up to 9 nm/$^{\circ}C$ within the temperature range of 25 to $100^{\circ}C$ can be achieved with the proposed sensor, almost 6 times higher compared even to state-of-the-art high-sensitivity grating-based fiber optic temperature sensors.

• Proceedings of KHEA Conference
• /
• 1997.07a
• /
• pp.64-64
• /
• 1997

• Bulletin of the Korean Chemical Society
• /
• v.24 no.7
• /
• pp.1038-1040
• /
• 2003

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.5 no.3
• /
• pp.159-167
• /
• 2005

Quantization effects (QEs), which manifests when the device dimensions are comparable to the de Brogile wavelength, are becoming common physical phenomena in the present micro-/nanometer technology era. While most novel devices take advantage of QEs to achieve fast switching speed, miniature size and extremely small power consumption, the mainstream CMOS devices (with the exception of EEPROMs) are generally suffering in performance from these effects. In this paper, an analytical model accounting for the QEs and poly-depletion effects (PDEs) at the silicon (Si)/dielectric interface describing the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of MOS devices with thin oxides is developed. It is also applicable to multi-layer gate-stack structures, since a general procedure is used for calculating the quantum inversion charge density. Using this inversion charge density, device characteristics are obtained. Also solutions for C-V can be quickly obtained without computational burden of solving over a physical grid. We conclude with comparison of the results obtained with our model and those obtained by self-consistent solution of the $Schr{\ddot{o}}dinger$ and Poisson equations and simulations reported previously in the literature. A good agreement was observed between them.